IGBT - SMPS
600 V, 60 A
HGTG30N60A4
Description
The HGTG30N60A4 combines the best features of high input
impedance of a MOSFET and the low on−state conduction loss
of a bipolar transistor. This IGBT is ideal for many high voltage
switching applications operating at high frequencies where low
conduction losses are essential. This device has been optimized
for fast switching applications.
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C
Features
•
•
•
•
•
60 A, 600 V @ TC = 110°C
Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 30 A
Typical Fall Time: 58 ns at TJ = 125°C
Low Conduction Loss
This is a Pb−Free Device
G
E
Applications
E
• UPS, Welder
C
G
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
G30N60A4
$Y
&Z
&3
&K
G30N60A4
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2005
February, 2020 − Rev. 3
1
Publication Order Number:
HGTG30N60A4/D
HGTG30N60A4
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Collector to Emitter Voltage
Collector Current Continuous
Symbol
Ratings
Unit
BVCES
600
V
IC
75
A
60
A
TC = 25°C
TC = 110°C
Collector Current Pulsed (Note 1)
ICM
240
A
Gate to Emitter Voltage Continuous
VGES
±20
V
Gate to Emitter Voltage Pulsed
VGEM
±30
V
Switching Safe Operating Area at TJ = 150°C, Figure 2
SSOA
150 A at 600V
PD
463
W
3.7
W/°C
TJ, TSTG
−55 to +150
°C
TL
TPKG
300
260
°C
°C
Power Dissipation Total
TC = 25°C
Power Dissipation Derating
TC > 25°C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 s
Package Body for 10 s, See Techbrief 334
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
Package
Shipping
HGTG30N60A4
G30N60A4
TO−247−3LD
450 / Tube
ELECTRICAL SPECIFICATIONS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Collector to Emitter Breakdown Voltage
BVCES
Emitter to Collector Breakdown Voltage
BVECS
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
ICES
VCE(SAT)
VGE(TH)
IGES
Test Conditions
Min
Typ
Max
Unit
IC = 250 A, VGE = 0 V,
600
−
−
V
IC = −10 mA, VGE = 0 V
20
−
−
V
TJ = 25°C
−
−
250
A
TJ = 125°C
−
−
4.0
mA
TJ = 25°C
−
1.8
2.6
V
TJ = 125°C
−
1.6
2.0
V
4.5
5.2
7.0
V
−
−
±250
nA
150
−
−
A
−
8.5
−
V
VGE = 15 V
−
225
270
nC
VGE = 20 V
−
300
360
nC
−
25
−
ns
−
12
−
ns
−
150
−
ns
−
38
−
ns
−
280
−
J
−
600
−
J
240
350
J
VCE = 600 V
IC = 30 A, VGE = 15 V
IC = 250 A, VCE= 600 V
VGE = ±20 V
Switching SOA
SSOA
TJ = 150°C, RG = 3 VGE = 15 V,
L = 100 H, VCE = 600 V
Gate to Emitter Plateau Voltage
VGEP
IC = 30 A, VCE = 300 V
QG(ON)
IC = 30 A, VCE = 300 V
On−State Gate Charge
Current Turn−On Delay Time
Current Rise Time
Current Turn−Off Delay Time
Current Fall Time
td(ON)I
trI
td(OFF)I
tfI
Turn−On Energy (Note 2)
EON1
Turn−On Energy (Note 2)
EON2
Turn−Off Energy (Note 3)
EOFF
IGBT and Diode at TJ = 25°C,
ICE = 30 A,
VCE = 390 V,
VGE = 15 V,
RG = 3 ,
L = 200 H,
Test Circuit − Figure 20
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2
HGTG30N60A4
ELECTRICAL SPECIFICATIONS (TC = 25°C unless otherwise noted) (continued)
Parameter
Current Turn−On Delay Time
Current Rise Time
Current Turn−Off Delay Time
Current Fall Time
Symbol
td(ON)I
trI
td(OFF)I
tfI
Test Conditions
IGBT and Diode at TJ = 125°C,
ICE = 30 A,
VCE = 390 V,
VGE = 15 V,
RG = 3 ,
L = 200 H,
Test Circuit − Figure 20
Min
Typ
Max
Unit
−
24
−
ns
−
11
−
ns
−
180
200
ns
−
58
70
ns
280
−
J
Turn−On Energy (Note 2)
EON1
Turn−On Energy (Note 2)
EON2
−
1000
1160
J
Turn−Off Energy (Note 3)
EOFF
−
450
750
J
Thermal Resistance, Junction−Case
RJC
−
−
0.27
°C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Values for two Turn−On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn−on loss of the IGBT only. EON2
is the turn−on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified
in Figure 20.
3. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
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3
HGTG30N60A4
TYPICAL PERFORMANCE CURVES (unless otherwise specified)
VGE = 15 V
60
50
40
30
20
10
0
25
50
75
100
125
TC, Case Temperature (°C)
200
150
100
50
0
150
tsc, Short Circuit Withstand Time (s)
fMAX, Operating Frequency (kHz)
TC / 75°C
VGE / 15 V
300
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD − PC) / (EON2 + EOFF)
PC = Conduction Dissipation
(Duty Factor = 50%)
RJC = 0.27°C/W, See Notes
100
TJ = 125°C, RG = 3 , L = 200 H, VCE = 390 V
30
900
16
14
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
30
TJ = 125°C
0
TJ = 150°C
0
TJ = 25°C
2.0
0.5
1.0
1.5
VCE, Collector to Emitter Voltage (V)
800
700
Isc
12
600
10
500
tsc
8
400
6
300
50
40
10
700
11
12
13
14
VGE, Gate to Emitter Voltage (V)
15
200
Figure 4. Short Circuit Withstand Time
Duty Cycle < 0.5%, VGE = 12 V
Pulse Duration = 250 s
20
400
500
600
200
300
VCE, Collector to Emitter Voltage (V)
VCE = 390 V, RG = 3 , TJ = 125°C
Figure 3. Operating Frequency vs. Collector
to Emitter Current
50
100
18
4
10
60
10
30
ICE, Collector to Emitter Current (A)
3
0
Figure 2. Minimum Switching Safe Operating
Area
Figure 1. DC Collector Current vs. Case
Temperature
500
TJ = 150°C, RG = 3 , VGE = 15 V, L = 500 H
Isc, Peak Short Circuit Current (A)
70
ICE, Collector to Emitter Current (A)
ICE, DC Collector Current (A)
60
2.5
Duty Cycle < 0.5%, VGE = 15 V
Pulse Duration = 250 s
40
30
20
TJ = 125°C
10
0
TJ = 150°C
0
0.5
1.0
TJ = 25°C
1.5
2.0
VCE, Collector to Emitter Voltage (V)
Figure 5. Collector to Emitter On−State
Voltage
Figure 6. Collector to Emitter On−State
Voltage
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2.5
HGTG30N60A4
TYPICAL PERFORMANCE CURVES (unless otherwise noted) (continued)
1400
RG = 3 , L = 200 H, VCE = 390 V
EOFF, Turn−Off Energy Loss (J)
EON2, Turn−On Energy Loss (J)
3500
3000
TJ = 125°C, VGE = 12 V, VGE = 15 V
2500
2000
1500
1000
500
0
1000
10
20
30
40
50
600
400
200
0
60
ICE, Collector to Emitter Current (A)
trI, Rise Time (ns)
td(ON)I, Turn−On Delay Time (ns)
28
26
24
0
10
20
30
40
50
ICE, Collector to Emitter Current (A)
220
VGE = 12 V, TJ = 125°C, TJ = 25°C,
60
TJ = 25°C, VGE = 15 V
40
TJ = 125°C, VGE = 15 V
0
60
0
10
20
30
40
50
ICE, Collector to Emitter Current (A)
60
Figure 10. Turn−On Rise Time vs. Collector
to Emitter Current
70
RG = 3 , L = 200 H, VCE = 390 V
200
60
20
TJ = 25°C, TJ = 125°C, VGE = 15 V
22
40
50
30
20
ICE, Collector to Emitter Current (A)
RG = 3 , L = 200 H, VCE = 390 V
Figure 9. Turn−On Delay Time vs. Collector
to Emitter Current
RG = 3 , L = 200 H, VCE = 390 V
60
VGE = 12 V, VGE = 15 V, TJ = 125°C
tfI, Fall Time (ns)
td(OFF), Turn−Off Delay Time (ns)
10
80
30
20
0
100
RG = 3 , L = 200 H, VCE = 390 V
TJ = 25°C, TJ = 125°C, VGE = 12 V
32
TJ = 25°C, VGE = 12 V or 15 V
Figure 8. Turn−Off Energy Loss vs. Collector
to Emitter Current
Figure 7. Turn−On Energy Loss vs. Collector
to Emitter Current
34
TJ = 125°C, VGE = 12 V or 15 V
800
TJ = 25°C, VGE = 12 V, VGE = 15 V
0
RG = 3 , L = 200 H, VCE = 390 V
1200
180
160
TJ = 125°C, VGE = 12 V or 15 V
50
40
TJ = 25°C, VGE = 12 V or 15 V
140
30
VGE = 12 V, VGE = 15 V, TJ = 25°C
120
0
10
20
30
40
50
20
60
0
ICE, Collector to Emitter Current (A)
10
20
30
40
50
ICE, Collector to Emitter Current (A)
Figure 12. Fall Time vs. Collector to Emitter
Current
Figure 11. Turn−Off Delay Time vs. Collector
to Emitter Current
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5
60
HGTG30N60A4
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) (continued)
15.0
Duty Cycle < 0.5%, VCE = 10 V
Pulse Duration = 250 s
300
VGE, Gate to Emitter Voltage (V)
ICE, Collector to Emitter Current (A)
350
TJ = 25°C
250
200
TJ = 125°C
150
TJ = −55°C
100
50
0
6
8
9
10
11
VGE, Gate to Emitter Voltage (V)
7
IG(REF) = 1 mA, RL = 15 , TJ = 25°C
12.5
VCE = 600 V
10.0
7.5
VCE = 200 V
5.0
2.5
0
12
0
ETOTAL, Total Switching Energy Loss (mJ)
ETOTAL, Total Switching Energy Loss (mJ)
ICE = 60 A
3
2
ICE = 30 A
1
0
ICE = 15 A
25
50
150
100
125
75
TC, Case Temperature (°C)
20
VCE, Collector to Emitter Voltage (V)
C, Capacitance (nF)
8
CIES
4
COES
2
0
CRES
0
5
10
15
250
16
12
8
ICE = 60 A
4
0
ICE = 30 A
ICE = 15 A
3
20
10
100
RG, Gate Resistance ()
300
Figure 16. Total Switching Loss vs. Gate
Resistance
Frequency = 1 MHz
6
200
TJ = 125°C, L = 200 H, VCE = 390 V,
VGE = 15 V
ETOTAL = EON2 + EOFF
Figure 15. Total Switching Loss vs. Case
Temperature
10
150
Figure 14. Gate Charge Waveforms
RG = 3 , L = 200 H, VCE = 390 V, VGE = 15 V
ETOTAL = EON2 + EOFF
4
100
50
QG, Gate Charge (nC)
Figure 13. Transfer Characteristic
5
VCE = 400 V
25
2.3
Duty Cycle < 0.5%, VGE = 15 V
Pulse Duration = 250 s, TJ = 25°C
2.2
2.1
2.0
ICE = 60 A
1.9
ICE = 30 A
1.8
ICE = 15 A
1.7
VCE, Collector to Emitter Voltage (V)
9
10
11
12
13
14
15
VGE, Gate to Emitter Voltage (V)
Figure 18. Collector to Emitter On−State
Voltage vs. Gate to Emitter Voltage
Figure 17. Capacitance vs. Collector to Emitter
Voltage
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6
16
HGTG30N60A4
ZJC, Normalized Thermal Response
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) (continued)
100
0.50
0.20
10−1
t1
0.10
PD
t2
0.05
Duty Factor, D = t1/t2
Peak TJ = (PD x ZJC x RJC) + TC
0.02
0.01
Single Pulse
10−2
10−5
10−4
10−2
10−3
10−1
101
100
t1, Rectangular Pulse Duration (s)
Figure 19. IGBT Normalized Transient Thermal Response, Junction to Case
TEST CIRCUIT AND WAVEFORMS
HGTP30N60A4D
DIODE TA49373
90%
10%
VGE
EON2
L = 200 H
EOFF
VCE
RG = 3
90%
+
−
VDD = 390 V
ICE
10%
td(OFF)I
tfI
trI
td(ON)I
Figure 21. Switching Test Waveforms
Figure 20. Inductive Switching Test Circuit
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HGTG30N60A4
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate−insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications,
with virtually no damage problems due to electrostatic
discharge. IGBTs can be handled safely if the following
basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBDt LD26”
or equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means − for example,
with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
5. Gate Voltage Rating − Never exceed
the gate−voltage rating of VGEM. Exceeding
the rated VGE can result in permanent damage
to the oxide layer in the gate region.
6. Gate Termination − The gates of these devices
are essentially capacitors. Circuits that leave
the gate open−circuited or floating should be
avoided. These conditions can result in turn−on
of the device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection − These devices do not have
an internal monolithic Zener diode from gate
to emitter. If gate protection is required an external
Zener is recommended.
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8,
9 and 11. The operating frequency plot (Figure 3)
of a typical device shows fMAX1 or fMAX2; whichever is
smaller at each point. The information is based on
measurements of a typical device and is bounded by
the maximum rated junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to
10% of the on−state time for a 50% duty factor. Other
definitions are possible. td(OFF)I and td(ON)I are defined in
Figure 21. Device turn−off delay can establish an additional
frequency limiting condition for an application other than
TJM.
fMAX2 is defined by fMAX2 = (PD − PC)/(EOFF + EON2).
The allowable dissipation (PD) is defined by
PD = (TJM − TC)/RJC. The sum of device switching
and conduction losses must not exceed PD. A 50% duty
factor was used (Figure 3) and the conduction losses (PC)
are approximated by PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 21. EON2 is the integral of the instantaneous
power loss (ICE x VCE) during turn−on and EOFF is
the integral of the instantaneous power loss (ICE x VCE)
during turn−off. All tail losses are included in the calculation
for EOFF; i.e., the collector current equals zero (ICE = 0).
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
A
DATE 31 JAN 2019
A
E
P1
P
A2
D2
Q
E2
S
B
D
1
2
D1
E1
2
3
L1
A1
L
b4
c
(3X) b
0.25 M
(2X) b2
B A M
DIM
(2X) e
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
A
A1
A2
b
b2
b4
c
D
D1
D2
E
E1
E2
e
L
L1
P
P1
Q
S
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
13.08
~
~
0.51 0.93 1.35
15.37 15.62 15.87
12.81
~
~
4.96 5.08 5.20
~
5.56
~
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
6.60 6.80 7.00
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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