IGBT - NPT
600 V
HGTG30N60B3
Description
The HGTG30N60B3 combines the best features of high input
impedance of a MOSFET and the low on−state conduction loss
of a bipolar transistor. The IGBT is ideal for many high voltage
switching applications operating at moderate frequencies where low
conduction losses are essential, such as: UPS, solar inverter and power
supplies.
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VCES
IC
1200 V
30 A
Features
•
•
•
•
•
•
C
30 A, 600 V, TC = 110°C
Low Saturation Voltage: VCE(SAT) = 1.45 V @ IC = 30 A
Typical Fall Time . . . . . . . . . . . . . 90 ns at TJ = 150°C
Short Circuit Rating
Low Conduction Loss
This Device is Pb−Free
G
E
E
C
G
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
G30N60B3
$Y
&Z
&3
&K
G30N60B3
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2001
March, 2020 − Rev. 3
1
Publication Order Number:
HGTG30N60B3/D
HGTG30N60B3
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Ratings
Unit
600
V
TC = 25°C
60
A
TC = 110°C
30
A
Collector Current Pulsed (Note 1)
220
A
VGES
Gate to Emitter Voltage Continuous
±20
V
VGEM
Gate to Emitter Voltage Pulsed
±30
V
SSOA
Switching Safe Operating Area at TJ = 150°C (Figure 2)
BVCES
IC
ICM
PD
EARV
TJ, TSTG
TL
TSC
Description
Collector to Emitter Voltage
Collector Current Continuous
60 A at 600 V
Power Dissipation Total
TC = 25°C
208
W
Power Dissipation Derating
TC > 25°C
1.67
W/°C
100
mJ
−55 to +150
°C
Reverse Voltage Avalanche Energy
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
260
°C
Short Circuit Withstand Time (Note 2)
VGE = 12 V
4
s
Short Circuit Withstand Time (Note 2)
VGE = 10 V
10
s
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360 V, TJ = 125°C, RG = 3
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Shipping
HGTG30N60B3
G30N60B3
TO−247
Tube
450/Tube
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
BVCES
Collector to Emitter Breakdown Voltage
IC = 250 A, VGE = 0 V
600
−
−
V
BVECS
Emitter to Collector Breakdown Voltage
IC = −10 mA, VGE = 0 V
20
−
−
V
Collector to Emitter Leakage Current
VCE = BVCES, TC = 25°C
−
−
250
A
VGE = BVCES, TC = 150°C
−
−
3.0
mA
IC = IC110, VGE = 15 V,
TC = 25°C
−
1.45
1.9
V
IC = IC110, VGE = 15 V,
TC = 150°C
−
1.7
2.1
V
Gate to Emitter Threshold Voltage
IC = 250 A, VCE = VGE
4.2
5.0
6.0
V
Gate to Emitter Leakage Current
VGE = ±20 V
−
−
±250
nA
Switching SOA
TJ = 150°C, RG = 3
VGE = 15 V, L = 100 H,
VCE(PK) = 480 V
200
−
A
TJ = 150°C, RG = 3
VGE = 15 V, L = 100 H,
VCE(PK) = 600 V
60
−
A
Gate to Emitter Plateau Voltage
IC = IC110, VCE = 0.5 BVCES
−
7.2
−
V
On−State Gate Charge
IC = IC110, VCE = 0.5 BVCES,
VGE = 15 V
−
170
190
nC
IC = IC110, VCE = 0.5 BVCES,
VGE = 20 V
−
230
250
nC
ICES
VCE(SAT)
VGE(th)
IGES
SSOA
VGEP
QG(ON)
Collector to Emitter Saturation Voltage
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2
HGTG30N60B3
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued)
Symbol
Td(on)I
TrI
Td(off)I
TfI
Parameter
Current Turn−On Delay Time
Current Rise Time
Current Turn−Off Delay Time
Current Fall Time
Test Conditions
Min.
Typ.
Max.
Unit
IGBT and Diode at TJ = 25°C
ICE = IC110
VCE = 0.8 BVCES
VGE = 15 V
RG = 3
L = 1 mH
Test Circuit (Figure 17)
−
36
−
ns
−
25
−
ns
−
137
−
ns
−
58
−
ns
Eon1
Turn−On Energy (Note 4)
−
500
Eon2
Turn−On Energy (Note 4)
−
550
800
J
Eoff
Turn−Off Energy (Note 3)
−
680
900
J
−
32
−
ns
−
24
−
ns
−
275
320
ns
−
90
150
ns
Td(on)l
Trl
Td(off)I
Tfl
Current Turn−On Delay Time
Current Rise Time
Current Turn−Off Delay Time
Current Fall Time
IGBT and Diode at TJ = 150°C
ICE = IC110
VCE = 0.8 BVCES
VGE = 15 V
RG = 3
L = 1 mH
Test Circuit (Figure 17)
J
Eon1
Turn−On Energy (Note 4)
−
500
−
J
Eon2
Turn−On Energy (Note 4)
−
1300
1550
J
Eoff
Turn−Off Energy (Note 3)
−
1600
1900
J
Thermal Resistance Junction To Case
−
−
0.6
°C/W
RJC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
4. Values for two Turn−On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn−on loss of the IGBT only. EON2
is the turn−on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified
in Figure 17.
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3
HGTG30N60B3
TYPICAL PERFORMANCE CURVES
225
VGE = 15V
ICE, Collector to Emitter Current (A)
50
40
30
20
10
0
25
50
75
100
125
TJ = 150oC, RG = 3 W, VGE= 15V, L =100 mH
200
175
150
125
100
75
50
25
0
150
0
100
TC, Case Temperature (5C)
tSC, Short Circuit Withstand Time (ms)
FMAX, Operating Frequency (kHz)
10
TC
VGE
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
1
o
fMAX2 = (PD − PC) / (EON2 + EOFF) 75 C 15V
o
PC = CONDUCTION DISSIPATION 75o C 10V
110 C 15V
(DUTY FACTOR = 50%)
110oC 10V
RjJC = 0.6oC/W, SEE NOTES
0.1
5
20
40
10
60
20
450
16
14
350
12
300
10
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
TC = 150oC
TC = 25oC
100
75
50
25
0
0
2
4
6
250
tSC
200
8
6
10
11
12
13
14
15
150
Figure 4. Short Circuit Withstand Time
DUTY CYCLE
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