HGTG40N60A4

SMPS Series N-Channel IGBT 600 V HGTG40N60A4 The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies Formerly Developmental Type TA49347. www.onsemi.com C G E Features • • • • • • 100 kHz Operation at 390 V, 40 A 200 kHz Operation at 390 V, 20 A 600 V Switching SOA Capability Typical Fall Time 55 ns at TJ = 125°C Low Conduction Loss This is a Pb−Free Device EC G COLLECTOR (BACK METAL) TO−247−3LD SHORT LEAD CASE 340CK JEDEC STYLE MARKING DIAGRAM $Y&Z&3&K 40N60A4 $Y &Z &3 &K 40N60A4 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2003 April, 2020 − Rev. 2 1 Publication Order Number: HGTG40N60A4/D HGTG40N60A4 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) Parameter Symbol HGTG40N60A4 Unit BVCES 600 V IC25 IC110 75 63 A A ICM 300 A VGES ±20 V V Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed VGEM ±30 Switching Safe Operating Area at TJ = 150°C, Figure 2 SSOA 200 A at 600 V PD 625 W 5 W/°C TJ, TSTG −55 to 150 °C TL 260 °C Power Dissipation Total at TC = 25°C Power Dissipation Derating TC > 25°C Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Collector to Emitter Breakdown Voltage BVCES IC = 250 mA, VGE = 0 V 600 − − V Emitter to Collector Breakdown Voltage BVECS IC = −10 mA, VGE = 0 V 20 − − V TJ = 25°C − − 250 mA TJ = 125°C − − 3.0 mA TJ = 25°C − 1.7 2.7 V TJ = 125°C − 1.5 2.0 V 4.5 5.6 7 V − − ±250 nA 200 − − A Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current ICES VCE(SAT) VGE(TH) IGES VCE = BVCES IC = 40 A, VGE = 15 V IC = 250 mA, VCE = VGE VGE = ±20 V Switching SOA SSOA TJ = 150°C, RG = 2.2 W, VGE = 15 V, L = 100 mH, VCE = 600 V Gate to Emitter Plateau Voltage VGEP IC = 40 A, VCE = 0.5 BVCES − 8.5 − V On−State Gate Charge Qg(ON) IC = 40 A, VCE = 0.5 BVCES VGE = 15 V − 350 405 nC VGE = 20 V − 450 520 nC − 25 − ns − 18 − ns − 145 − ns − 35 − ns − 400 − mJ Current Turn−On Delay Time Current Rise Time Current Turn−Off Delay Time Current Fall Time td(ON)I trI td(OFF)I tfI IGBT and Diode at TJ = 25°C, ICE = 40 A, VCE = 0.65 BVCES, VGE = 15 V, RG = 2.2 W, L = 200 mH, Test Circuit (Figure 20) Turn−On Energy (Note 3) EON1 Turn−On Energy (Note 3) EON2 − 850 − mJ Turn−Off Energy (Note 2) EOFF − 370 − mJ www.onsemi.com 2 HGTG40N60A4 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Symbol Current Turn−On Delay Time Test Condition IGBT and Diode at TJ = 125°C, ICE = 40 A, VCE = 0.65 BVCES, VGE = 15 V, RG = 2.2 W, L = 200 mH, Test Circuit (Figure 20) td(ON)I Current Rise Time trI Current Turn−Off Delay Time td(OFF)I Current Fall Time tfI Min Typ Max Unit − 27 − ns − 20 − ns − 185 225 ns − 55 95 ns − 400 − mJ Turn−On Energy (Note 3) EON1 Turn−On Energy (Note 3) EON2 − 1220 1400 mJ Turn−Off Energy (Note 2) EOFF − 700 800 mJ Thermal Resistance Junction To Case RqJC − − 0.2 °C/W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss. 3. Values for two Turn−On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn−on loss of the IGBT only. EON2 is the turn−on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. 225 VGE = 15 V 70 PACKAGE LIMITED 60 50 40 30 20 10 0 25 50 75 100 125 TJ = 150°C, RG = 2.2 W, VGE = 15 V, L = 100 mH 200 175 150 125 100 75 50 25 0 0 150 TC, CASE TEMPERATURE (°C) TC 75°C 200 VGE 15 V 100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD − PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.27°C/W, SEE NOTES 10 RG = 2.2 W, L = 200 mH, VCE = 390 V 3 10 200 300 400 500 600 700 Figure 2. MINIMUM SWITCHING SAFE OPERATING AREA tSC, SHORT CIRCUIT WITHSTAND TIME (ms) fMAX, OPERATING FREQUENCY (kHz) Figure 1. DC COLLECTOR CURRENT vs. CASE TEMPERATURE 300 100 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 40 12 8 800 6 600 2 10 ICE, COLLECTOR TO EMITTER CURRENT (A) 1000 ISC tSC 4 70 1200 VCE = 390 V, RG = 2.2 W, TJ = 125°C 10 11 12 13 14 400 15 200 16 VGE, GATE TO EMITTER VOLTAGE (V) Figure 3. OPERATING FREQUENCY vs. COLLECTOR TO EMITTER CURRENT Figure 4. SHORT CIRCUIT WITHSTAND TIME www.onsemi.com 3 ISC, PEAK SHORT CIRCUIT CURRENT (A) 80 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, DC COLLECTOR CURRENT (A) TYPICAL PERFORMANCE CURVES (unless otherwise specified) HGTG40N60A4 TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued) 80 DUTY CYCLE < 0.5%, VGE = 12 V PULSE DURATION = 250 ms 70 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 80 60 50 TJ = 125°C 40 30 20 TJ = 150°C 10 0 0 0.2 0.4 0.6 0.8 TJ = 25°C 1.0 1.2 1.4 1.6 1.8 70 60 50 40 20 0 0 EOFF, TURN−OFF ENERGY LOSS (mJ) EON2, TURN−ON ENERGY LOSS (mJ) TJ = 125°C, VGE = 12 V, VGE = 15 V 3500 3000 2500 2000 1500 1000 0 TJ = 25°C, VGE = 12 V, VGE = 15 V 0 10 20 30 40 50 60 70 80 1800 1200 TJ = 125°C, VGE = 12 V or 15 V 1000 800 600 400 200 0 TJ = 25°C, VGE = 12 V or 15 V 0 120 RG = 2.2 W, L = 200 mH, VCE = 390 V 20 30 40 50 60 70 80 RG = 2.2 W, L = 200 mH, VCE = 390 V 100 trI, RISE TIME (ns) td(ON)I, TURN−ON DELAY TIME (ns) 10 Figure 8. TURN−OFF ENERGY LOSS vs. COLLECTOR TO EMITTER CURRENT 36 34 32 30 28 26 TJ = 125°C, TJ = 25°C, VGE = 12 V 80 60 40 20 24 22 1.8 2.0 2.2 ICE, COLLECTOR TO EMITTER CURRENT (A) TJ = 25°C, TJ = 125°C, VGE = 15 V 38 1.6 1400 Figure 7. TURN−ON ENERGY LOSS vs. COLLECTOR TO EMITTER CURRENT 40 0.8 1.0 1.2 1.4 RG = 2.2 W, L = 200 mH, VCE = 390 V 1600 ICE, COLLECTOR TO EMITTER CURRENT (A) 42 0.6 Figure 6. COLLECTOR TO EMITTER ON−STATE VOLTAGE 4500 500 0.2 0.4 TJ = 25°C VCE, COLLECTOR TO EMITTER VOLTAGE (V) RG = 2.2 W, L = 200 mH, VCE = 390 V 4000 TJ = 150°C 10 2.0 Figure 5. COLLECTOR TO EMITTER ON−STATE VOLTAGE 5000 TJ = 125°C 30 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 5500 DUTY CYCLE < 0.5%, VGE = 15 V PULSE DURATION = 250 ms TJ = 25°C, TJ = 125°C, VGE = 15 V 0 10 20 30 40 50 60 70 0 80 ICE, COLLECTOR TO EMITTER CURRENT (A) TJ = 25°C, TJ = 125°C, VGE = 15 V 0 10 20 30 40 50 60 70 80 ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 9. TURN−ON DELAY TIME vs. COLLECTOR TO EMITTER CURRENT Figure 10. TURN−ON RISE TIME vs. COLLECTOR TO EMITTER CURRENT www.onsemi.com 4 HGTG40N60A4 190 70 RG = 2.2 W, L = 200 mH, VCE = 390 V 180 170 VGE = 12 V, VGE = 15 V, TJ = 125°C 160 150 VGE = 12 V or 15 V, TJ = 25°C 140 130 0 10 20 30 40 50 RG = 2.2 W, L = 200 mH, VCE = 390 V 65 tfI, FALL TIME (ns) td(OFF)I, TURN−OFF DELAY TIME (ns) TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued) 55 50 45 TJ = 25°C, VGE = 12 V or 15 V 40 35 70 60 TJ = 125°C, VGE = 12 V or 15 V 60 30 80 0 10 ICE, COLLECTOR TO EMITTER CURRENT (A) 350 DUTY CYCLE < 0.5%, VCE = 10 V PULSE DURATION = 250 ms 300 250 TJ = −55°C 200 TJ = 125°C 150 TJ = 25°C 100 50 0 6 7 8 9 11 10 16 12 VCE = 600 V 10 0 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ICE = 40 A ICE = 20 A 25 50 75 100 125 80 VCE = 400 V VCE = 200 V 6 4 2 0 0 100 3 1 70 50 100 150 200 250 300 350 400 Figure 14. GATE CHARGE WAVEFORMS ICE = 80 A 2 60 QG, GATE CHARGE (nC) TJ = 125°C, L = 200 mH, VCE = 390 V, VGE = 15 V ETOTAL = EON2 + EOFF 4 50 8 Figure 13. TRANSFER CHARACTERISTIC 5 40 IG(REF) = 1 mA, RL = 7.5 W, TJ = 25°C 14 VGE, GATE TO EMITTER VOLTAGE (V) 6 30 Figure 12. FALL TIME vs. COLLECTOR TO EMITTER CURRENT VGE, GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 11. TURN−OFF DELAY TIME vs. COLLECTOR TO EMITTER CURRENT 400 20 ICE, COLLECTOR TO EMITTER CURRENT (A) TJ = 125°C L = 200 mH, VCE = 390 V, VGE = 15 V ETOTAL = EON2 + EOFF ICE = 80 A 10 ICE = 40 A 1 ICE = 20 A 0.1 150 TC, CASE TEMPERATURE (°C) 3 10 100 RG, GATE RESISTANCE (W) Figure 15. TOTAL SWITCHING LOSS vs. CASE TEMPERATURE Figure 16. TOTAL SWITCHING LOSS vs. GATE RESISTANCE www.onsemi.com 5 500 HGTG40N60A4 C, CAPACITANCE (nF) 14 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued) FREQUENCY = 1 MHz 12 10 8 C IES 6 4 C OES 2 0 C RES 0 10 20 30 40 50 60 70 80 90 100 VCE, COLLECTOR TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VGE = 15 V PULSE DURATION = 250 ms, TJ = 25°C 2.3 2.2 ICE = 80 A 2.1 ICE = 40 A 2.0 1.9 ICE = 20 A 8 10 9 11 12 13 14 15 16 VGE, GATE TO EMITTER VOLTAGE (V) Figure 17. CAPACITANCE vs. COLLECTOR TO EMITTER VOLTAGE ZqJC, NORMALIZED THERMAL RESPONSE 2.4 Figure 18. COLLECTOR TO EMITTER ON−STATE VOLTAGE vs. GATE TO EMITTER VOLTAGE 100 0.50 0.20 0.10 10−1 t1 0.05 PD 0.02 t2 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD x ZqJC x RqJC) + TC SINGLE PULSE 10−2 −5 10 10−4 10−3 10−2 10−1 100 101 t1, RECTANGULAR PULSE DURATION (s) Figure 19. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE TEST CIRCUIT AND WAVEFORMS HGT1Y40N60A4D 90% 10% VGE EON2 EOFF L = 200 mH VCE RG = 2.2 W 90% + − VDD = 390 V 10% ICE Figure 20. INDUCTIVE SWITCHING TEST CIRCUIT t d(OFF)I t fI t rI t d(ON)I Figure 21. SWITCHING TEST WAVEFORMS www.onsemi.com 6 HGTG40N60A4 HANDLING PRECAUTIONS FOR IGBTs Insulated Gate Bipolar Transistors are susceptible to gate− insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBDt LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means − for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating − Never exceed the gate−voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination − The gates of these devices are essentially capacitors. Circuits that leave the gate open− circuited or floating should be avoided. These conditions can result in turn−on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. OPERATING FREQUENCY INFORMATION Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05 / (td(OFF)I + td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on−state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn−off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD − PC) / (EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM − TC) / RqJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 21) and the conduction losses (PC) are approximated by PC = (VCE x ICE) / 2. EON2 and EOFF are defined in the switching waveforms shown in Figure 25. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn−on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn−off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). ORDERING INFORMATION Part Number HGTG40N60A4 NOTE: Package Brand Shipping TO−247 40N60A4 450 Units / Tube When ordering, use the entire part number. All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative