NCV8440STT1G

NCV8440 Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features http://onsemi.com VDSS (Clamped) 52 V RDS(ON) TYP 95 mW @ 10 V ID MAX 2.6 A Drain (Pins 2, 4) • • • • • • Diode Clamp Between Gate and Source ESD Protection − HBM 5000 V Active Over−Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance These are Pb−Free Devices Gate (Pin 1) Overvoltage Protection Applications • Automotive and Industrial Markets: and Control Changes ESD Protection • NCV Prefix for Automotive and Other Applications Requiring Site Solenoid Drivers, Lamp Drivers, Small Motor Drivers Source (Pin 3) MARKING DIAGRAM DRAIN SOT−223 CASE 318E STYLE 3 1 = Gate 2 = Drain 3 = Source 1 GATE 4 AYW F9N05 G G 2 3 SOURCE DRAIN A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NCV8440STT1G NCV8440STT3G Package SOT−223 (Pb−Free) SOT−223 (Pb−Free) Shipping† 1000/Tape & Reel 4000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 December, 2009 − Rev. 5 1 Publication Order Number: NCV8440/D NCV8440 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Internally Clamped Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C − Single Pulse (tp = 10 ms) (Note 1) Symbol VDSS VGS ID IDM PD TJ, Tstg EAS VLD RqJA RqJA TL Value 52−59 ±15 2.6 10 1.69 −55 to 150 110 60 74 169 260 Unit V V A W °C mJ V °C/W Total Power Dissipation @ TA = 25°C (Note 1) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, ID(pk) = 1.17 A, VGS = 10 V, L = 160 mH, RG = 25 W) Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms) Thermal Resistance, Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to a FR4 board using 1″ pad size, (Cu area 1.127 in2). 2. When surface mounted to a FR4 board using minimum recommended pad size, (Cu area 0.412 in2). + ID DRAIN IG + GATE VDS VGS SOURCE − − Figure 1. Voltage and Current Convention http://onsemi.com 2 NCV8440 MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 V, ID = 1.0 mA, TJ = 25°C) (VGS = 0 V, ID = 1.0 mA, TJ = −40°C to 125°C) (Note 4) Temperature Coefficient (Negative) Zero Gate Voltage Drain Current (VDS = 40 V, VGS = 0 V) (VDS = 40 V, VGS = 0 V, TJ = 125°C) (Note 4) Gate−Body Leakage Current (VGS = ±8 V, VDS = 0 V) (VGS = ±14 V, VDS = 0 V) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 100 mA) Threshold Temperature Coefficient (Negative) Static Drain−to−Source On−Resistance (Note 3) (VGS = 3.5 V, ID = 0.6 A) (VGS = 4.0 V, ID = 1.5 A) (VGS = 10 V, ID = 2.6 A) Forward Transconductance (Note 3) (VDS = 15 V, ID = 2.6 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance Input Capacitance Output Capacitance Transfer Capacitance 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Not subject to production testing. 5. Switching characteristics are independent of operating junction temperatures. VDS = 25 V, VGS = 0 V, f = 10 kHz VDS = 35 V, VGS = 0 V, f = 10 kHz Ciss Coss Crss Ciss Coss Crss 155 60 25 170 70 30 pF pF VGS(th) 1.1 1.5 −4.1 135 150 95 3.8 1.9 V mV/°C mW V(BR)DSS 52 50.8 55 54 −9.3 59 59.5 V V mV/°C mA Symbol Min Typ Max Unit IDSS 10 25 ±10 IGSS ±35 mA RDS(on) 180 160 110 gFS Mhos http://onsemi.com 3 NCV8440 MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Gate Charge VGS = 4.5 V, VDS = 40 V, ID = 2.6 A (Note 3) Gate Charge VGS = 4.5 V, VDS = 15 V, ID = 1.5 A (Note 3) SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage Reverse Recovery Time IS = 1.5 A, VGS = 0 V, dIs/dt = 100 A/ms (Note 3) Reverse Recovery Stored Charge ESD CHARACTERISTICS (Note 4) Electro−Static Discharge Capability Human Body Model (HBM) Machine Model (MM) 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Not subject to production testing. 5. Switching characteristics are independent of operating junction temperatures. ESD 5000 500 V IS = 2.6 A, VGS = 0 V (Note 3) IS = 2.6 A, VGS = 0 V, TJ = 125°C VSD trr ta tb QRR 0.81 0.66 730 200 530 6.3 mC 1.5 V ns VGS = 10 V, VDD = 15 V, ID = 2.6 A, RD = 5.8 W VGS = 4.5 V, VDD = 40 V, ID = 1.0 A, RD = 40 W VGS = 4.5 V, VDD = 40 V, ID = 2.6 A, RD = 15.4 W td(on) tr td(off) tf td(on) tr td(off) tf td(on) tr td(off) tf QT Q1 Q2 QT Q1 Q2 375 1525 1530 1160 325 1275 1860 1150 190 710 2220 1180 4.5 0.9 2.6 3.9 1.0 1.7 nC nC ns ns ns Symbol Min Typ Max Unit http://onsemi.com 4 NCV8440 TYPICAL PERFORMANCE CURVES ILmax, MAX SWITCH−OFF CURRENT (A) 10 Emax, MAX SWITCHING ENERGY (mJ) 25°C 100°C 100 150°C 25°C 100°C 150°C 1 0.1 1 10 100 10 0.1 1 10 100 L, LOAD INDUCTANCE (mH) L, LOAD INDUCTANCE (mH) Figure 1. Single Pulse Maximum Switch−off Current vs. Load Inductance 10 ID, DRAIN CURRENT (AMPS) 8 6 4 2 0 10 ID, DRAIN CURRENT (AMPS) TJ = 25°C 4V 3.8 V 3.6 V 3.4 V 3.2 V 3V 2.8 V 2.6 V 2.4 V 0 1 2 3 4 5 Figure 2. Single Pulse Maximum Switching Energy vs. Load Inductance VGS = 10 V 5V VDS ≥ 10 V 8 6 4 2 0 TJ = 150°C TJ = 25°C 1 1.5 2 TJ = −40°C 2.5 3 3.5 4 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 3. On−State Output Characteristics 350 ID = 2 A 300 150°C RDS(on) (mW) RDS(on) (mW) 250 200 150 100 50 −40°C 3 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 25°C 250 200 150 300 Figure 4. Transfer Characteristics 150°C, VGS = 5 V 150°C, VGS = 10 V 25°C, VGS = 5 V 100 −40°C, VGS = 5 V 50 1 2 3 4 5 25°C, VGS = 10 V −40°C, VGS = 10 V 6 7 8 9 10 ID, DRAIN CURRENT (A) Figure 5. RDS(on) vs. Gate−Source Voltage Figure 6. RDS(on) vs. Drain Current http://onsemi.com 5 NCV8440 TYPICAL PERFORMANCE CURVES 2.00 1.75 NORMALIZED RDS(on) 1.50 1.25 1.00 0.75 0.50 −40 −20 VGS = 10 V VGS = 5 V ID = 2 A NORMALIZED VGS(th) (V) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 −40 −20 ID = 100 mA, VDS = VGS 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Normalized RDS(on) vs. Temperature 1000 VGS = 0 V IS, SOURCE CURRENT (A) 100 10 IDSS (mA) 1 0.1 0.01 0.001 10 25°C 15 20 25 30 35 40 45 50 VDS , DRAIN−TO−SOURCE VOLTAGE (V) 8 6 4 2 0 0.5 10 Figure 8. Normalized Threshold Voltage vs. Temperature 150°C 100°C 150°C 25°C 0.6 0.7 0.8 −40°C 0.9 1 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Drain−to−Source Leakage Current Figure 10. Source−Drain Diode Forward Characteristics VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 5 4 3 2 1 0 VDS QGS QT VGS 40 30 20 10 0 50 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 500 Ciss VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 400 VDS = 0 V 300 200 100 0 10 Crss QGD Ciss Coss Crss 5 VGS 0 VDS 5 10 15 20 25 30 35 ID = 2.6 A TJ = 25°C 0 1 2 4 3 QG, TOTAL GATE CHARGE (nC) 5 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Capacitance Variation Figure 12. Gate−to−Source Voltage vs. Total Gate Charge http://onsemi.com 6 NCV8440 TYPICAL PERFORMANCE CURVES 3000 2500 2000 TIME (ns) 1500 1000 500 0 tr td(on) 4 5 6 7 VGS (V) 8 9 10 100 1 10 100 RG (W) 1000 10,000 td(on) VDD = 40 V VDD = 15 V td(off) 10,000 VDD = 40 V VDD = 15 V td(off) TIME (ns) ID = 2.6 A RG = 0 W tf 1000 tf tr Figure 13. Resistive Load Switching Time vs. Gate−Source Voltage 10,000 110 VDD = 40 V VDD = 15 V td(off) TIME (ns) tf 1000 tr RqJA (°C/W) 90 80 70 60 50 100 Figure 14. Resistive Load Switching Time vs. Gate Resistance (VGS = 5 V, ID = 2.6 A) PCB Cu thickness, 1.0 oz td(on) 100 PCB Cu thickness, 2.0 oz 0 50 100 150 200 250 300 350 400 450 500 COPPER HEAT SPREADER AREA (mm2) 1 10 100 RG (W) 1000 10,000 Figure 15. Resistive Load Switching Time vs. Gate Resistance (VGS = 10 V, ID = 2.6 A) 100 50% Duty Cycle RqJA 788 mm2 C°/W 20% 10 10% 5% 2% 1 1% Figure 16. RqJA vs. Copper Area Single Pulse 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 17. Transient Thermal Resistance http://onsemi.com 7 NCV8440 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE L D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 1 0° − INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 − 4 HE E 1 2 3 e1 b e A q L1 C DIM A A1 b b1 c D E e e1 L1 HE q MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0° MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0° MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 1 0° 0.08 (0003) A1 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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