NGTB20N120IHWG

NGTB20N120IHWG IGBT - Induction Cooking This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on−state voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications. www.onsemi.com Features • • • • 20 A, 1200 V VCEsat = 2.20 V Eoff = 0.48 mJ Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Losses in IH Cooker Application This is a Pb−Free Device C Typical Applications • Inductive Heating • Consumer Appliances • Soft Switching G E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage @ TJ = 25°C VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C Pulsed collector current, Tpulse limited by TJmax, 10 ms Pulse, VGE = 15 V Diode forward current @ TC = 25°C @ TC = 100°C IC A 40 20 ICM 80 A G C IF A 40 20 TO−247 CASE 340AL E MARKING DIAGRAM Diode pulsed current, Tpulse limited by TJmax, 10 ms Pulse, VGE = 0 V IFM 80 A Gate−emitter voltage Transient Gate−emitter voltage (Tpulse = 5 ms, D < 0.10) VGE $20 $25 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −40 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C 20N120IH AYWWG W 341 170 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2015 September, 2015 − Rev. 1 1 Device Package Shipping NGTB20N120IHWG TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB20N120IHW/D NGTB20N120IHWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case Rating RqJC 0.44 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 20 A VGE = 15 V, IC = 20 A, TJ = 175°C VCEsat − − 2.20 2.30 2.65 − V VGE = VCE, IC = 250 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 150°C ICES − − − − 0.1 2.8 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA Input capacitance Cies − 3590 − pF Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 90 − Cres − 70 − Qg − 150 − Qge − 31 − Qgc − 67 − TJ = 25°C VCC = 600 V, IC = 20 A Rg = 10 W VGE = 0 V/ 15V td(off) − 170 − tf − 155 − Eoff − 0.48 − mJ TJ = 150°C VCC = 600 V, IC = 20 A Rg = 10 W VGE = 0 V/ 15V td(off) − 185 − ns tf − 210 − Eoff − 0.92 − mJ VGE = 0 V, IF = 20 A VGE = 0 V, IF = 20 A, TJ = 175°C VF − − 2.2 3.8 2.75 V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 20 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−off delay time Fall time Turn−off switching loss Turn−off delay time Fall time Turn−off switching loss ns DIODE CHARACTERISTIC Forward voltage Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB20N120IHWG TYPICAL CHARACTERISTICS 60 50 10 V 40 9V 30 20 8V 10 7V 0 0 1 2 3 4 5 7 6 50 10 V 40 9V 30 8V 20 10 7V 0 8 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 10000 8 Cies 50 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) VGE = 11 V to 20 V 0 60 40 30 20 TJ = 150°C 100 Coes Cres 10 TJ = 25°C 1 0 1 2 3 4 6 5 7 8 9 10 11 0 10 20 30 40 50 60 70 80 VGE, GATE−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 3. Typical Transfer Characteristics Figure 4. Typical Capacitance 90 100 16 VGE, GATE−EMITTER VOLTAGE (V) 70 60 TJ = 25°C 50 40 30 20 TJ = 150°C 10 0 0 1000 TJ = 25°C 10 0 IF, FORWARD CURRENT (A) TJ = 150°C TJ = 25°C VGE = 11 V to 20 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 60 14 VCE = 600 V 12 10 8 6 4 VCE = 600 V VGE = 15 V IC = 20 A 2 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 VF, FORWARD VOLTAGE (V) 20 40 60 80 100 120 140 160 180 200 QG, GATE CHARGE (nC) Figure 5. Diode Forward Characteristics Figure 6. Typical Gate Charge www.onsemi.com 3 NGTB20N120IHWG TYPICAL CHARACTERISTICS 1.0 0.7 VCE = 600 V VGE = 15 V IC = 20 A Rg = 10 W Eoff SWITCHING TIME (ns) 0.8 SWITCHING LOSS (mJ) 1000 VCE = 600 V VGE = 15 V IC = 20 A Rg = 10 W 0.9 0.6 0.5 0.4 0.3 0.2 tf td(off) 0.1 0 0 20 40 60 80 100 120 100 160 140 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Switching Loss vs. Temperature Figure 8. Switching Time vs. Temperature 1000 160 1000 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 0 TJ, JUNCTION TEMPERATURE (°C) 50 ms 100 ms 10 1 ms dc operation Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 1 10 100 100 10 VGE = 15 V, TC = 125°C 1 1000 10k 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) 100 1000 10k VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 10. Reverse Bias Safe Operating Area Figure 9. Safe Operating Area SQUARE−WAVE PEAK R(t) (°C/W) 1 50% Duty Cycle 0.1 RqJA = 0.44 20% 10% 0.01 R1 Junction 5% R2 Rn Case 2% C1 0.001 0.0001 1E−06 Ci (J/°C) 0.08113 0.118279 0.115034 0.130170 0.001355 0.003898 0.008455 0.027490 0.076823 73.79876 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 1E−05 Cn C2 Ri (°C/W) 0.0001 0.001 0.01 ON−PULSE WIDTH (s) Figure 11. IGBT Transient Thermal Impedance www.onsemi.com 4 0.1 1 NGTB20N120IHWG Figure 12. Test Circuit for Switching Characteristics www.onsemi.com 5 NGTB20N120IHWG Figure 13. Definition of Turn Off Waveform www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE D DATE 17 MAR 2017 SCALE 1:1 E E2/2 D SEATING PLANE Q 2X 2 M B A M NOTE 6 S NOTE 3 1 0.635 P A E2 NOTE 4 4 DIM A A1 b b2 b4 c D E E2 e F L L1 P Q S 3 L1 F NOTE 5 L 2X B A NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. b2 c b4 3X e b 0.25 A1 NOTE 7 M B A M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.07 1.33 1.65 2.35 2.60 3.40 0.45 0.68 20.80 21.34 15.50 16.25 4.32 5.49 5.45 BSC 2.655 --19.80 20.80 3.81 4.32 3.55 3.65 5.40 6.20 6.15 BSC GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON16119F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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