NGTB25N120FLWG

NGTB25N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. http://onsemi.com Features • • • • • • 25 A, 1200 V VCEsat = 2.0 V Eoff = 0.95 mJ Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation 10 ms Short Circuit Capability Low Gate Charge Soft, Fast Free Wheeling Diode These are Pb−Free Devices C Typical Applications • Solar Inverter • UPS Inverter G E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax IFM 200 A Gate−emitter voltage VGE $20 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Short Circuit Withstand Time VGE = 15 V, VCE = 500 V, TJ ≤ 150°C A 50 25 200 A C TO−247 CASE 340L STYLE 4 E A 50 25 MARKING DIAGRAM W 192 77 TSC 10 ms TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds(note 3) TSLD 260 °C Operating junction temperature range G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 25N120FL AYWWG A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB25N120FLWG © Semiconductor Components Industries, LLC, 2012 September, 2012 − Rev. 0 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB25N120FLW/D NGTB25N120FLWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.65 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.5 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 25 A VGE = 15 V, IC = 25 A, TJ = 150°C VCEsat 1.55 − 2.0 2.2 2.2 − V VGE = VCE, IC = 250 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 150°C ICES − − − − 0.5 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 100 nA Cies − 5200 − pF Coes − 144 − Cres − 94 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Qg 220 Qge 40 Qgc 98 td(on) 91 tr 26 td(off) 228 tf 160 Eon 1.50 Turn−off switching loss Eoff 0.95 Total switching loss Ets 2.45 Turn−on delay time td(on) 88 Gate to emitter charge VCE = 600 V, IC = 25 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 600 V, IC = 25 A Rg = 10 W VGE = 0 V/ 15V Rise time tr 28 td(off) 240 tf 270 Eon 1.8 Turn−off switching loss Eoff 1.6 Total switching loss Ets 3.4 Turn−off delay time Fall time Turn−on switching loss TJ = 125°C VCC = 600 V, IC = 25 A Rg = 10 W VGE = 0 V/ 15V http://onsemi.com 2 ns mJ ns mJ NGTB25N120FLWG ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol VGE = 0 V, IF = 25 A VGE = 0 V, IF = 25 A, TJ = 150°C TJ = 25°C IF = 25 A, VR = 400 V diF/dt = 200 A/ms Min Typ Max Unit VF 2.2 2.5 2.8 V trr 240 ns Qrr 1.5 mc Irrm 15 A trr 260 ns Qrr 2.0 mc Irrm 19 A DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge TJ = 125°C IF = 25 A, VR = 400 V diF/dt = 200 A/ms Reverse recovery current http://onsemi.com 3 NGTB25N120FLWG TYPICAL CHARACTERISTICS 300 TJ = 25°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 300 250 VGE = 20 to 15 V 200 13 V 150 11 V 100 10 V 9V 50 0 0 1 2 3 4 5 8V 7V 7 6 11 V 100 10 V 9V 50 8V 7V 0 1 2 3 4 5 6 7 Figure 1. Output Characteristics Figure 2. Output Characteristics 8 200 IC, COLLECTOR CURRENT (A) VGE = 20 to 15 V 250 13 V 200 11 V 150 10 V 100 9V 50 7V 8V 0 1 2 3 4 5 6 7 150 TJ = 25°C 125 TJ = 150°C 100 75 50 25 0 4 8 12 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 1000 100 Coes Cres 25 50 75 100 16 120 Cies 0 175 0 8 IF, FORWARD CURRENT (A) IC, COLLECTOR CURRENT (A) 150 VCE, COLLECTOR−EMITTER VOLTAGE (V) 10,000 CAPACITANCE (pF) 13 V VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = −40°C 10 VGE = 20 to 15 V 200 0 8 300 0 TJ = 150°C 250 125 150 175 100 80 60 40 TJ = 125°C 20 0 200 TJ = 25°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VCE, COLLECTOR−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V) Figure 5. Typical Capacitance Figure 6. Diode Forward Characteristics http://onsemi.com 4 NGTB25N120FLWG TYPICAL CHARACTERISTICS 2.5 VCE = 600 V 12 8 4 0 0 50 100 200 150 250 300 0.5 0 350 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Gate Charge Figure 8. Energy Loss vs. Temperature 160 4 td(off) 100 td(on) tr 10 VCE = 600 V VGE = 15 V IC = 25 A Rg = 10 W 0 20 40 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 3.5 SWITCHING LOSS (mJ) SWITCHING TIME (ns) 0 QG, GATE CHARGE (nC) 3 2.5 2 Eon 1.5 Eoff 1 0.5 60 80 100 120 140 0 160 8 20 24 28 32 36 40 44 Figure 9. Switching Time vs. Temperature Figure 10. Energy Loss vs. IC 5.0 SWITCHING LOSS (mJ) td(on) tr 10 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 12 VCE = 600 V VGE = 15 V IC = 25 A TJ = 150°C 4.5 td(off) 8 16 IC, COLLECTOR CURRENT (A) tf 100 12 TJ, JUNCTION TEMPERATURE (°C) 1000 SWITCHING TIME (ns) Eoff 1 tf 1 Eon 1.5 1000 1 VCE = 600 V VGE = 15 V IC = 25 A Rg = 10 W 2 SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 16 16 20 24 28 32 36 40 44 48 4.0 3.5 48 52 Eon 3.0 2.5 Eoff 2.0 1.5 1.0 0.5 0 52 5 15 25 35 45 55 65 IC, COLLECTOR CURRENT (A) Rg, GATE RESISTOR (W) Figure 11. Switching Time vs. IC Figure 12. Energy Loss vs. Rg http://onsemi.com 5 75 85 NGTB25N120FLWG TYPICAL CHARACTERISTICS 10,000 3.5 tf td(on) 100 tr VCE = 600 V VGE = 15 V IC = 25 A TJ = 150°C 10 1 SWITCHING LOSS (mJ) SWITCHING TIME (ns) 1000 5 15 25 35 45 55 65 1 375 425 475 525 575 625 675 725 775 Rg, GATE RESISTOR (W) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 13. Switching Time vs. Rg Figure 14. Energy Loss vs. VCE 1000 IC, COLLECTOR CURRENT (A) td(off) td(on) VGE = 15 V IC = 25 A Rg = 10 W TJ = 150°C 375 425 475 525 575 625 675 725 50 ms 100 100 ms 10 dc operation 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 775 1 ms 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. VCE Figure 16. Safe Operating Area 1000 IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) Eoff 1.5 0 tr 1 Eon 2 85 75 tf 10 2.5 0.5 1000 100 VGE = 15 V IC = 25 A Rg = 10 W TJ = 150°C 3 td(off) 100 10 1 VGE = 15 V, TC = 125°C 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Reverse Bias Safe Operating Area http://onsemi.com 6 NGTB25N120FLWG TYPICAL CHARACTERISTICS THERMAL RESPONSE (ZqJC) 1 50% Duty Cycle RqJC = 0.65 20% 0.1 10% Junction R1 5% 1% C2 C1 Case 0.00001 Ri (°C/W) 0.02659 0.06231 0.10246 0.2121 0.1057 Cn ti (sec) 1.0E−4 1.76E−4 0.002 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 Rn Ci = ti/Ri 2% 0.01 R2 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 18. IGBT Transient Thermal Impedance 10 THERMAL RESPONSE (ZqJC) RqJC = 1.5 1 50% Duty Cycle 20% 10% 0.1 5% 2% 0.01 0.001 R1 Junction R2 Case Ci = ti/Ri C1 1% 0.00001 Cn C2 Ri (°C/W) ti (sec) 0.19655 0.414 0.5 0.345 0.0934 1.48E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.000001 Rn 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 19. Diode Transient Thermal Impedance Figure 20. Test Circuit for Switching Characteristics http://onsemi.com 7 10 100 1000 NGTB25N120FLWG Figure 21. Definition of Turn On Waveform http://onsemi.com 8 NGTB25N120FLWG Figure 22. Definition of Turn Off Waveform http://onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340L ISSUE G DATE 06 OCT 2021 SCALE 1:1 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG STYLE 1: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE (S) ANODE 2 CATHODES (S) STYLE 5: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 6: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DOCUMENT NUMBER: DESCRIPTION: STYLE 3: PIN 1. 2. 3. 4. 98ASB15080C TO−247 BASE COLLECTOR EMITTER COLLECTOR STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 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