NGTB30N120LWG

NGTB30N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on−state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage. http://onsemi.com 30 A, 1200 V VCEsat = 1.75 V Eoff = 1.0 mJ Features • • • • • Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Low Gate Charge 5 ms Short−Circuit Capability These are Pb−Free Devices C Typical Applications • • • • Inverter Welding Machines Microwave Ovens Industrial Switching Motor Control Inverter G E ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Collector−emitter voltage Rating VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax IFM 240 A Gate−emitter voltage VGE $20 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Short−Circuit Withstand Time VGE = 15 V, VCE = 600 V, TJ ≤ 150°C Tsc 5 ms Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C A 60 30 240 G C TO−247 CASE 340L STYLE 4 E A A 60 30 MARKING DIAGRAM 30N120L AYWWG W 560 224 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB30N120LWG © Semiconductor Components Industries, LLC, 2013 June, 2013 − Rev. 1 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB30N120L/D NGTB30N120LWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.223 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.5 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 30 A VGE = 15 V, IC = 30 A, TJ = 150°C VCEsat 1.35 − 1.75 2.1 2.2 − V VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 150°C ICES − − − − 0.5 2.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA Cies − 10,400 − pF Coes − 245 − Cres − 185 − Qg − 420 − Qge − 94 − Qgc − 178 − td(on) − 136 − tr − 36 − td(off) − 360 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 30 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss TJ = 25°C VCC = 600 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15 V Turn-off switching loss Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss TJ = 125°C VCC = 600 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15 V Turn-off switching loss tf − 150 − Eon − 4.4 − Eoff − 1.0 − td(on) − 131 − tr − 36 − td(off) − 380 − tf − 216 − Eon − 5.3 − Eoff − 2.0 − VF − − ns mJ ns mJ DIODE CHARACTERISTIC Forward voltage VGE = 0 V, IF = 30 A VGE = 0 V, IF = 30 A, TJ = 150°C http://onsemi.com 2 1.5 1.7 1.7 − V NGTB30N120LWG TYPICAL CHARACTERISTICS TJ = 25°C 10 V 120 100 80 9V 60 40 20 8V 7V 0 1 2 4 5 9V 60 8V 40 20 7V 0 1 2 3 4 Figure 1. Output Characteristics Figure 2. Output Characteristics 140 10 V TJ = −40°C 80 60 9V 40 7V 20 8V 0 1 2 5 160 100 0 80 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 to 11 V 120 10 V 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) 160 IC, COLLECTOR CURRENT (A) 3 VGE = 20 to 13 V TJ = 150°C 120 0 IC, COLLECTOR CURRENT (A) 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 140 140 VGE = 20 to 11 V 3 4 140 120 100 80 60 TJ = 150°C 40 TJ = 25°C 20 0 5 0 4 8 12 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 100,000 3.0 IC = 60 A 2.5 2.0 IC = 30 A 1.5 IC = 10 A 1.0 IC = 5 A Cies 10,000 CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 160 1000 Coes 100 0.5 0 −50 Cres −20 10 40 70 100 130 10 160 0 20 40 60 80 100 120 140 160 180 200 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance http://onsemi.com 3 NGTB30N120LWG TYPICAL CHARACTERISTICS 20 120 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 140 TJ = 25°C 100 TJ = 150°C 80 60 40 20 0 0 0.5 1.0 2.0 1.5 2.5 3.0 5 0 0 120 180 240 300 360 Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge 480 td(off) VCE = 600 V VGE = 15 V IC = 30 A Rg = 10 W 3 2 SWITCHING TIME (ns) Eon 4 Eoff tf td(on) 100 tr 10 VCE = 600 V VGE = 15 V IC = 30 A Rg = 10 W 1 0 12 20 40 60 80 8 100 120 140 1 160 0 20 40 60 80 100 140 160 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 1000 td(off) Eon 6 4 Eoff tf td(on) 100 tr 10 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 2 16 120 TJ, JUNCTION TEMPERATURE (°C) VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 10 0 420 1000 5 0 60 QG, GATE CHARGE (nC) SWITCHING TIME (ns) SWITCHING LOSS (mJ) 10 VF, FORWARD VOLTAGE (V) 6 SWITCHING LOSS (mJ) VCE = 600 V 15 24 32 40 48 56 1 64 16 24 32 40 48 56 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC http://onsemi.com 4 64 NGTB30N120LWG TYPICAL CHARACTERISTICS 14 10,000 VCE = 600 V VGE = 15 V IC = 30 A TJ = 150°C 10 Eon SWITCHING TIME (ns) SWITCHING LOSS (mJ) 12 8 6 Eoff 4 td(off) 1000 tf td(on) 100 tr VCE = 600 V VGE = 15 V IC = 30 A TJ = 150°C 10 2 0 5 15 25 35 45 55 65 75 1 85 15 55 75 85 725 775 65 Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg td(off) SWITCHING TIME (ns) 6 Eon 5 4 3 Eoff 2 tf td(on) 100 tr 10 VGE = 15 V IC = 30 A Rg = 10 W TJ = 150°C 1 375 425 475 525 575 625 675 725 1 775 375 425 475 525 575 625 675 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 100 ms 100 IC, COLLECTOR CURRENT (A) 1000 IC, COLLECTOR CURRENT (A) 45 Rg, GATE RESISTOR (W) VGE = 15 V IC = 30 A Rg = 10 W TJ = 150°C 7 50 ms 1 ms 10 dc operation 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 35 1000 8 0 25 Rg, GATE RESISTOR (W) 9 SWITCHING LOSS (mJ) 5 1 10 100 100 10 VGE = 15 V, TC = 125°C 1 1000 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTB30N120LWG TYPICAL CHARACTERISTICS THERMAL RESPONSE (ZqJC) 0.25 RqJC = 0.223 0.2 0.15 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 50% Duty Cycle 0.1 Junction R1 5% 20% 0.05 Rn Case 2% C1 Single Pulse 0.0001 0.001 ti (sec) 0.000552 0.000298 0.003008 0.028694 0.038749 0.018104 0.106053 0.033246 0.011021 0.025807 0.019008 0.062412 0.002845 0.166363 Ci = ti/Ri 10% 0 0.00001 R2 Ri (°C/W) 0.01 C2 0.112690 0.280617 Cn 0.1 0.016645 6.007735 1 10 PULSE TIME (sec) Figure 19. IGBT Transient Thermal Impedance 10 R(t) (°C/W) 1 RqJC = 1.5 50% Duty Cycle 20% 10% 0.1 5% 2% 1% R1 Junction C1 Case 0.00001 Cn C2 Ri (°C/W) ti (sec) 0.19655 0.414 0.5 0.345 0.0934 1.48E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.000001 Rn Ci = ti/Ri 0.01 0.001 R2 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 20. Diode Transient Thermal Impedance Figure 21. Test Circuit for Switching Characteristics http://onsemi.com 6 10 100 1000 NGTB30N120LWG Figure 22. Definition of Turn On Waveform http://onsemi.com 7 NGTB30N120LWG Figure 23. Definition of Turn Off Waveform http://onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340L ISSUE G DATE 06 OCT 2021 SCALE 1:1 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG STYLE 1: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE (S) ANODE 2 CATHODES (S) STYLE 5: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 6: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DOCUMENT NUMBER: DESCRIPTION: STYLE 3: PIN 1. 2. 3. 4. 98ASB15080C TO−247 BASE COLLECTOR EMITTER COLLECTOR STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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