NGTB30N120IHSWG

NGTB30N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage. http://onsemi.com 30 A, 1200 V VCEsat = 2.00 V Eoff = 1.0 mJ Features • • • • • Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Case Temperature in IH Cooker Application Low Gate Charge These are Pb−Free Devices C Typical Applications G • Inductive Heating • Consumer Appliances • Soft Switching E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax IFM 200 A Gate−emitter voltage VGE $20 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C A 60 30 200 G C TO−247 CASE 340L STYLE 4 E A A 60 30 MARKING DIAGRAM 30N120IHS AYWWG W 192 77 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB30N120IHSWG © Semiconductor Components Industries, LLC, 2012 September, 2012 − Rev. 0 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB30N120IHSW/D NGTB30N120IHSWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.65 °C/W Thermal resistance junction−to−case, for Diode RqJC 2.0 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 30 A VGE = 15 V, IC = 30 A, TJ = 150°C VCEsat − − 2.0 2.6 2.4 − V VGE = VCE, IC = 250 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 150°C ICES − − − − 0.5 2.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA Cies − 5300 − pF Coes − 125 − Cres − 95 − Qg − 220 − Qge − 42 − Qgc − 95 − TJ = 25°C VCC = 600 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15V td(off) − 210 − tf − 140 − Eoff − 1.0 − mJ TJ = 125°C VCC = 600 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15V td(off) − 215 − ns tf − 175 − Eoff − 1.8 − mJ VGE = 0 V, IF = 30 A VGE = 0 V, IF = 30 A, TJ = 150°C VF − − 1.8 2.0 2.0 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 30 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−off delay time Fall time Turn−off switching loss Turn−off delay time Fall time Turn−off switching loss ns DIODE CHARACTERISTIC Forward voltage http://onsemi.com 2 NGTB30N120IHSWG TYPICAL CHARACTERISTICS IC, COLLECTOR CURRENT (A) 200 160 11 V 120 10 V 80 7V 40 9V 8V 0 0 280 IC, COLLECTOR CURRENT (A) 240 VGE = 20 to 13 V TJ = 25°C 1 2 3 4 5 6 7 160 11 V 120 80 10 V 7V 9V 40 8V 0 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 200 160 11 V 120 10 V 80 40 7V 9V 8V 0 1 2 3 4 5 6 7 8 250 VGE = 20 to 13 V 240 200 TJ = 25°C 150 TJ = 150°C 100 50 0 8 0 8 4 12 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 10000 4 16 Cies IC = 60 A 3 CAPACITANCE (pF) VCE, COLLECTOR−EMITTER VOLTAGE (V) 200 VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = −40°C 0 VGE = 20 to 15 V TJ = 150°C 8 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 240 IC = 30 A 2 IC = 10 A IC = 5 A 1 1000 100 Coes Cres 0 −50 −20 10 40 70 100 130 160 10 0 20 40 60 80 100 120 140 160 180 200 TJ, JUNCTION TEMPERATURE VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance http://onsemi.com 3 NGTB30N120IHSWG TYPICAL CHARACTERISTICS TJ = 25°C 80 TJ = 150°C 60 40 20 0 0.5 1.0 1.5 2.0 2.5 3.5 3.0 4.0 4.5 10 5 0 150 200 QG, GATE CHARGE (nC) Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge 250 1000 VCE = 600 V VGE = 15 V IC = 30 A Rg = 10 W 2 1.5 1 0.5 0 20 40 60 80 100 120 140 3.5 3 tf 100 10 VCE = 600 V VGE = 15 V IC = 30 A Rg = 10 W 0 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Energy Loss vs. Temperature Figure 10. Switching Time vs. Temperature tf 2 1.5 1 100 10 0.5 14 20 160 1000 2.5 8 20 TJ, JUNCTION TEMPERATURE (°C) VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 4 td(off) 1 160 4.5 0 100 50 VF, FORWARD VOLTAGE (V) 2.5 0 VCE = 600 V 15 0 5.0 SWITCHING TIME (ns) Eoff, TURN−OFF SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 100 0 Eoff, TURN−OFF SWITCHING LOSS (mJ) 20 SWITCHING TIME (ns) IF, FORWARD CURRENT (A) 120 26 32 38 44 50 56 1 8 62 td(off) VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 14 20 26 32 38 44 50 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Energy Loss vs. IC Figure 12. Switching Time vs. IC http://onsemi.com 4 56 62 NGTB30N120IHSWG 3.2 10000 2.8 2 1.6 1.2 VCE = 600 V VGE = 15 V IC = 30 A TJ = 150°C 0.8 0.4 0 5 15 25 35 45 55 65 75 td(off) 1000 tf 100 VCE = 600 V VGE = 15 V IC = 30 A TJ = 150°C 10 1 85 5 35 45 55 65 75 Figure 13. Energy Loss vs. Rg Figure 14. Switching Time vs. Rg 85 1000 2.4 SWITCHING TIME (ns) td(off) 2 1.6 1.2 VGE = 15 V IC = 30 A Rg = 10 W TJ = 150°C 0.8 0.4 375 425 475 525 575 625 tf 100 10 VGE = 15 V IC = 30 A Rg = 10 W TJ = 150°C 1 375 425 725 775 675 475 525 575 625 675 725 775 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Energy Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 1 ms 50 ms 100 100 ms 10 dc operation 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 25 Rg, GATE RESISTOR (W) 2.8 0 15 Rg, GATE RESISTOR (W) 1000 IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) 2.4 IC, COLLECTOR CURRENT (A) Eoff, TURN−OFF SWITCHING LOSS (mJ) Eoff, TURN−OFF SWITCHING LOSS (mJ) TYPICAL CHARACTERISTICS 1 10 100 100 10 1 1000 VGE = 15 V, TC = 125°C 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTB30N120IHSWG TYPICAL CHARACTERISTICS 1 R(t) (°C/W) 50% Duty Cycle RqJC = 0.65 20% 0.1 10% Junction R1 5% 1% C1 C2 Case 0.00001 Ri (°C/W) 0.02659 0.06231 0.10246 0.2121 0.1057 Cn ti (sec) 1.0E−4 1.76E−4 0.002 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 Rn Ci = ti/Ri 2% 0.01 R2 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 19. IGBT Transient Thermal Impedance 10 RqJC = 2.0 R(t) (°C/W) 1 0.1 50% Duty Cycle 20% 10% 5% Junction R1 1% C1 Case 0.00001 C2 Ri (°C/W) 0.25813 0.57713 0.67147 0.38693 0.1057 Cn ti (sec) 1.48E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 Rn Ci = ti/Ri 2% 0.01 R2 0.0001 0.001 0.01 0.1 PULSE TIME (sec) 1 Figure 20. Diode Transient Thermal Impedance Figure 21. Test Circuit for Switching Characteristics http://onsemi.com 6 10 100 1000 NGTB30N120IHSWG Figure 22. Definition of Turn Off Waveform http://onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340L ISSUE G DATE 06 OCT 2021 SCALE 1:1 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG STYLE 1: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE (S) ANODE 2 CATHODES (S) STYLE 5: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 6: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DOCUMENT NUMBER: DESCRIPTION: STYLE 3: PIN 1. 2. 3. 4. 98ASB15080C TO−247 BASE COLLECTOR EMITTER COLLECTOR STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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