NGTB30N120FL2WG

NGTB30N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com Features • • • • • • 30 A, 1200 V VCEsat = 2.0 V Eoff = 0.7 mJ Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 ms Short Circuit Capability This is a Pb−Free Device C Typical Applications • Solar Inverter • Uninterruptible Power Supplies (UPS) • Welding G E ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Collector−emitter voltage Rating VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax, 10 ms Pulse, VGE = 15 V ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax IFM 120 A Gate−emitter voltage Transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10) VGE $20 ±30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD A 60 30 C 120 A A TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. July, 2015 − Rev. 1 30N120FL2 AYWWG W ms © Semiconductor Components Industries, LLC, 2015 MARKING DIAGRAM 452 227 10 Operating junction temperature range E 60 30 TSC Short Circuit Withstand Time VGE = 15 V, VCE = 500 V, TJ ≤ 150°C TO−247 CASE 340AL G 1 Device NGTB30N120FL2WG Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB30N120FL2W/D NGTB30N120FL2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.33 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.5 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 30 A VGE = 15 V, IC = 30 A, TJ = 175°C VCEsat − − 2.00 − 2.30 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175°C ICES − − − − 1.0 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 5250 − pF VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 170 − Cres − 100 − Qg − 220 − Qge − 45 − Qgc − 105 − td(on) − 98 − tr − 35 − td(off) − 210 − tf − 130 − Eon − 2.6 − Turn−off switching loss Eoff − 0.7 − Total switching loss Ets − 3.3 − Turn−on delay time td(on) − 92 − Gate−emitter threshold voltage Input capacitance Output capacitance Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 30 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 600 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15V Rise time Turn−off delay time Fall time TJ = 175°C VCC = 600 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15V tr − 35 − td(off) − 220 − ns mJ ns tf − 260 − Eon − 3.5 − Turn−off switching loss Eoff − 1.8 − Total switching loss Ets − 5.3 − VF − − 1.75 − − − V Turn−on switching loss mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge VGE = 0 V, IF = 30 A VGE = 0 V, IF = 30 A, TJ = 175°C TJ = 25°C IF = 30 A, VR = 400 V diF/dt = 200 A/ms Reverse recovery current Reverse recovery time Reverse recovery charge TJ = 175°C IF = 30 A, VR = 400 V diF/dt = 200 A/ms Reverse recovery current www.onsemi.com 2 trr − 240 − ns Qrr − 2.5 − mc Irrm − 18 − A trr − 413 − ns Qrr − 4.3 − mc Irrm − 20 − A NGTB30N120FL2WG TYPICAL CHARACTERISTICS 120 VGE = 20 V to 13 V 100 80 11 V 60 10 V 40 9V 20 8V 7V 0 1 2 3 4 5 7 6 80 11 V 60 10 V 40 9V 20 8V 0 8 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 120 8 120 100 80 IC, COLLECTOR CURRENT (A) TJ = −55°C VGE = 20 V to 13 V 11 V 60 40 10 V 20 7V 9V 8V 0 0 1 2 3 4 5 6 7 100 80 60 40 TJ = 150°C 20 TJ = 25°C 0 0 8 1 2 3 4 5 6 7 8 9 10 11 12 13 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 4.00 10000 Cies IC = 60 A 3.50 3.00 2.50 IC = 30 A 2.00 IC = 15 A 1.50 1.00 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) VGE = 20 V to 13 V 100 7V 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = 150°C TJ = 25°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 120 1000 Coes 100 Cres 10 0.50 TJ = 25°C 0.00 −75 −50 −25 1 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs TJ Figure 6. Typical Capacitance www.onsemi.com 3 90 100 NGTB30N120FL2WG TYPICAL CHARACTERISTICS 16 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 70 60 TJ = 25°C 50 TJ = 150°C 40 30 20 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE = 600 V 10 8 6 4 VCE = 600 V VGE = 15 V IC = 30 A 2 0 4.0 50 100 250 200 150 VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC) Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge 3.5 1000 VCE = 600 V VGE = 15 V IC = 30 A Rg = 10 W SWITCHING TIME (ns) Eon 3 SWITCHING LOSS (mJ) 12 0 0 2.5 2 1.5 Eoff 1 VCE = 600 V VGE = 15 V IC = 30 A Rg = 10 W 0.5 0 td(off) tf td(on) 100 tr 10 0 20 40 60 80 100 120 140 0 160 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 160 1000 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 10 8 SWITCHING TIME (ns) 12 SWITCHING LOSS (mJ) 14 Eon 6 Eoff 4 tf td(off) td(on) 100 VCE = 600 V VGE = 15 V IC = 30 A Rg = 10 W tr 2 0 5 15 25 35 45 55 65 75 10 85 5 15 25 35 45 55 65 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC www.onsemi.com 4 75 85 NGTB30N120FL2WG TYPICAL CHARACTERISTICS 10000 VCE = 600 V VGE = 15 V TJ = 150°C IC = 30 A SWITCHING LOSS (mJ) 8 7 6 SWITCHING TIME (ns) 9 Eon 5 4 3 Eoff 2 VCE = 600 V VGE = 15 V TJ = 150°C IC = 30 A 1000 td(off) tf td(on) 100 tr 1 0 5 15 25 35 55 45 65 75 10 5 85 15 25 35 45 55 65 75 Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W) Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg 85 1000 5 td(off) 4 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 4.5 Eon 3.5 3 2.5 2 Eoff 1.5 VGE = 15 V TJ = 150°C IC = 30 A Rg = 10 W 1 0.5 0 350 400 450 500 550 600 650 700 750 td(on) tr 100 10 350 800 VGE = 15 V TJ = 150°C IC = 30 A Rg = 10 W 400 450 500 550 600 650 700 750 800 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 1000 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) tf 50 ms 10 100 ms dc operation 1 ms 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 1 10 100 10 VGE = 15 V, TC = 125°C 1 100 1000 1 10000 10 100 1000 10000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area www.onsemi.com 5 NGTB30N120FL2WG Qrr, REVERSE RECOVERY CHARGE (mC) TYPICAL CHARACTERISTICS 350 TJ = 175°C, IF = 30 A 300 250 200 150 TJ = 25°C, IF = 30 A 100 50 Irm, REVERSE RECOVERY CURRENT (A) 100 300 500 700 900 1100 6 5 TJ = 175°C, IF = 30 A 4 3 TJ = 25°C, IF = 30 A 2 1 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 19. trr vs. diF/dt (VR = 400 V) Figure 20. Qrr vs. diF/dt (VR = 400 V) 60 1100 3.00 VF, FORWARD VOLTAGE (V) trr, REVERSE RECOVERY TIME (ns) 400 50 TJ = 175°C, IF = 30 A 40 30 TJ = 25°C, IF = 30 A 20 10 100 300 500 700 900 1100 2.75 IF = 60 A 2.50 2.25 IF = 30 A 2.00 1.75 IF = 15 A 1.50 1.25 1.00 −75 −50 −25 0 25 50 75 100 125 150 175 200 diF/dt, DIODE CURRENT SLOPE (A/ms) TJ, JUNCTION TEMPERATURE (°C) Figure 21. Irm vs. diF/dt (VR = 400 V) Figure 22. VF vs. TJ www.onsemi.com 6 NGTB30N120FL2WG TYPICAL CHARACTERISTICS 250 VCE = 600 V, RG = 10 W, VGE = 0/15 V TC = 80°C 200 Ipk (A) TC = 110°C 150 100 50 0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) Figure 23. Collector Current vs. Switching Frequency SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJA = 0.334 50% Duty Cycle 0.1 20% 10% 5% 0.01 R1 Junction R2 Rn Case 2% C1 0.001 1E−05 Ci (J/°C) 0.006937 0.021638 0.088972 0.081618 0.391221 30.76872 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.0001 1E−06 Cn C2 Ri (°C/W) 0.045588 0.046214 0.035542 0.122522 0.080831 0.003250 0.0001 0.01 0.001 0.1 1 ON−PULSE WIDTH (s) Figure 24. IGBT Transient Thermal Impedance SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.500 50% Duty Cycle 0.1 20% 10% 5% 2% Junction R1 R2 Rn C1 C2 Cn 0.01 Single Pulse 0.001 1E−06 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 1E−05 0.0001 0.001 0.01 ON−PULSE WIDTH (s) Figure 25. Diode Transient Thermal Impedance www.onsemi.com 7 Case Ri (°C/W) Ci (J/°C) 0.007703 0.010613 0.010097 0.032329 0.046791 0.044179 0.083870 0.000130 0.000942 0.003132 0.003093 0.006758 0.022635 0.119232 0.044938 0.703706 0.217376 0.460033 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE D DATE 17 MAR 2017 SCALE 1:1 E E2/2 D SEATING PLANE Q 2X 2 M B A M NOTE 6 S NOTE 3 1 0.635 P A E2 NOTE 4 4 DIM A A1 b b2 b4 c D E E2 e F L L1 P Q S 3 L1 F NOTE 5 L 2X B A NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. b2 c b4 3X e b 0.25 A1 NOTE 7 M B A M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.07 1.33 1.65 2.35 2.60 3.40 0.45 0.68 20.80 21.34 15.50 16.25 4.32 5.49 5.45 BSC 2.655 --19.80 20.80 3.81 4.32 3.55 3.65 5.40 6.20 6.15 BSC GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON16119F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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