NGTB40N120FL2WG

DATA SHEET www.onsemi.com IGBT - Field Stop II NGTB40N120FL2WG 40 A, 1200 V VCEsat = 2.0 V Eoff = 1.1 mJ This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. G Features • • • • • • C Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 ms Short Circuit Capability These are Pb−Free Devices E G Typical Applications • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Welding MARKING DIAGRAM Symbol Value Unit Collector−emitter Voltage VCES 1200 V Collector Current @ TC = 25°C @ TC = 100°C IC Pulsed Collector Current, Tpulse Limited by TJmax Diode Forward Current @ TC = 25°C @ TC = 100°C E TO−247 CASE 340AM ABSOLUTE MAXIMUM RATINGS Rating C ICM IF A 80 40 200 40N120FL2 AYWWG A A 80 40 Diode Pulsed Current, Tpulse Limited by TJmax IFM 200 A Gate−emitter Voltage Transient Gate−emitter Voltage (Tpulse = 5 ms, D < 0.10) VGE ±20 ±30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Short Circuit Withstand Time VGE = 15 V, VCE = 500 V, TJ ≤ 150°C TSC 10 ms Operating Junction Temperature Range TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C 40N120FL2 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package W 535 267 ORDERING INFORMATION Device Package Shipping NGTB40N120FL2WG TO−247 (Pb−Free) 30 Units / Rail Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2015 January, 2022 − Rev. 8 1 Publication Order Number: NGTB40N120FL2W/D NGTB40N120FL2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.28 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.5 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 175°C VCEsat − − 2.00 2.40 2.40 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175°C ICES − − − − 0.1 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 7385 − pF VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 230 − Cres − 140 − DYNAMIC CHARACTERISTIC Input capacitance Output capacitance Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 40 A, VGE = 15 V Gate to collector charge Qg − 313 − Qge − 61 − Qgc − 151 − td(on) − 116 − tr − 42 − td(off) − 286 − nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15V tf − 121 − Eon − 3.4 − Eoff − 1.1 − Total switching loss Ets − 4.5 − Turn−on delay time td(on) − 111 − tr − 43 − td(off) − 304 − tf − 260 − Turn−on switching loss Turn−off switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 175°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15 V ns mJ ns Eon − 4.4 − Turn−off switching loss Eoff − 2.5 − Total switching loss Ets − 6.9 − VF − − 2.00 2.30 2.60 − V trr − 240 − ns mc mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current VGE = 0 V, IF = 40 A VGE = 0 V, IF = 50 A, TJ = 175°C TJ = 25°C IF = 40 A, VR = 400 V diF/dt = 200 A/ms TJ = 175°C IF = 40 A, VR = 400 V diF/dt = 200 A/ms Qrr − 2.5 − Irrm − 18 − A trr − 392 − ns Qrr − 5.36 − mc Irrm − 25.80 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB40N120FL2WG TYPICAL CHARACTERISTICS 160 TJ = 25°C 140 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 160 VGE = 20 V to 13 V 120 100 11 V 80 10 V 60 40 9V 20 0 7V 0 1 2 3 4 8V 5 7 6 8 100 11 V 80 10 V 60 9V 40 8V 20 7V 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 8 160 140 IC, COLLECTOR CURRENT (A) TJ = −55°C VGE = 20 V to 13 V 120 11 V 100 80 60 10 V 40 7V 20 9V 8V 0 1 2 3 4 5 6 7 140 120 100 80 60 40 TJ = 150°C 20 0 0 8 TJ = 25°C 1 2 3 4 5 6 7 8 9 10 11 12 13 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.50 4.0 IC = 75 A 3.00 VF, FORWARD VOLTAGE (V) IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 V to 13 V 120 0 160 0 TJ = 150°C 140 IC = 40 A 2.50 2.00 IC = 20 A 1.50 1.00 0.50 0.00 −75 −50 −25 0 25 50 3.5 IF = 80 A 3.0 2.5 IF = 40 A 2.0 IF = 20 A 1.5 1.0 −75 −50 −25 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. VCE(sat) vs TJ Figure 6. VF vs. TJ www.onsemi.com 3 NGTB40N120FL2WG TYPICAL CHARACTERISTICS 100000 70 IF, FORWARD CURRENT (A) C, CAPACITANCE (pF) TJ = 25°C Cies 10000 1000 Coes 100 Cres 10 1 10 20 30 40 60 50 70 20 10 2.0 2.5 3.0 3.5 10 8 6 4 VCE = 600 V VGE = 15 V IC = 40 A 2 50 100 200 150 250 300 3.5 3 2.5 Eoff 2 1.5 VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 1 0.5 0 350 0 20 40 60 80 100 120 140 QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature 12 SWITCHING LOSS (mJ) tf td(on) tr VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 40 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 10 td(off) 60 80 100 120 140 8 Eon Eoff 4 2 5 15 25 35 45 55 65 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A) Figure 11. Switching Time vs. Temperature Figure 12. Switching Loss vs. IC www.onsemi.com 4 160 6 0 160 4.0 Eon 4 VCE = 600 V 20 1.5 Figure 8. Diode Forward Characteristics 12 0 1.0 Figure 7. Typical Capacitance 4.5 100 0.5 VF, FORWARD VOLTAGE (V) 14 10 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) 1000 SWITCHING TIME (ns) 30 5 0 TJ = 150°C 40 16 0 TJ = 25°C 50 0 90 100 80 SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 0 60 75 85 NGTB40N120FL2WG TYPICAL CHARACTERISTICS 14 1000 VCE = 600 V VGE = 15 V TJ = 150°C IC = 40 A td(off) SWITCHING LOSS (mJ) SWITCHING TIME (ns) 12 tf td(on) 100 tr 10 5 15 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 25 35 45 55 65 75 6 4 Eoff 0 5 85 15 25 35 55 45 Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. Rg td(off) tr 5 Eon 4 3 Eoff 2 VGE = 15 V TJ = 150°C IC = 40 A Rg = 10 W 1 25 35 45 55 65 75 0 350 85 450 500 550 600 650 700 750 800 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. Rg Figure 16. Switching Loss vs. VCE 1000 IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) 400 Rg, GATE RESISTOR (W) 1000 td(off) tf td(on) 100 tr 10 350 85 6 td(on) 15 75 7 tf 10 5 65 Rg, GATE RESISTOR (W) SWITCHING LOSS (mJ) SWITCHING TIME (ns) 8 IC, COLLECTOR CURRENT (A) VCE = 600 V VGE = 15 V TJ = 150°C IC = 40 A 100 Eon 2 10000 1000 10 VGE = 15 V TJ = 150°C IC = 40 A Rg = 10 W 400 450 500 550 600 650 700 100 10 dc operation 100 ms 1 ms 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 750 800 50 ms 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Switching Time vs. VCE Figure 18. Safe Operating Area www.onsemi.com 5 10000 NGTB40N120FL2WG TYPICAL CHARACTERISTICS 10 VGE = 15 V, TC = 125°C 1 10 100 1000 10000 550 450 TJ = 175°C, IF = 40 A 350 250 150 50 TJ = 25°C, IF = 40 A 100 300 500 700 900 1100 diF/dt, DIODE CURRENT SLOPE (A/m) Figure 19. Reverse Bias Safe Operating Area Figure 20. trr vs. diF/dt (VR = 400 V) 6 TJ = 175°C, IF = 40 A 5 4 TJ = 25°C, IF = 40 A 3 2 1 0 650 VCE, COLLECTOR−EMITTER VOLTAGE (V) Irm, REVERSE RECOVERY CURRENT (A) 1 Qrr, REVERSE RECOVERY CHARGE (mC) trr, REVERSE RECOVERY TIME (ns) 100 100 300 500 700 900 1100 1300 60 TJ = 175°C, IF = 40 A 50 40 TJ = 25°C, IF = 40 A 30 20 10 0 100 300 500 700 900 1100 diF/dt, DIODE CURRENT SLOPE (A/m) Figure 21. Qrr vs. diF/dt (VR = 400 V) Figure 22. Irm vs. diF/dt (VR = 400 V) 250 VCE = 600 V, RG = 10 W, VGE = 0/15 V 200 TC = 80°C 150 TC = 80°C TC = 110°C 100 50 0 0.01 0.1 1 10 100 FREQUENCY (kHz) Figure 23. Collector Current vs. Switching Frequency www.onsemi.com 6 1300 70 diF/dt, DIODE CURRENT SLOPE (A/m) Ipk (A) IC, COLLECTOR CURRENT (A) 1000 1000 1300 NGTB40N120FL2WG TYPICAL CHARACTERISTICS SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.28 50% Duty Cycle 0.1 0.01 20% 10% 5% R1 Junction R2 Rn Case 2% C1 0.001 1E−05 Ci (J/°C) 0.006487 0.023120 0.061163 0.092651 1.252250 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.0001 1E−06 Cn C2 Ri (°C/W) 0.048747 0.043252 0.051703 0.107932 0.025253 0.0001 0.001 0.01 0.1 1 ON−PULSE WIDTH (s) Figure 24. IGBT Transient Thermal Impedance SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.50 50% Duty Cycle 0.1 20% 10% 5% 2% 0.01 0.001 1E−06 Junction R1 R2 Rn C1 C2 Cn Single Pulse Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 1E−05 0.0001 0.001 0.01 ON−PULSE WIDTH (s) Figure 25. Diode Transient Thermal Impedance www.onsemi.com 7 Case Ri (°C/W) Ci (J/°C) 0.007703 0.010613 0.010097 0.032329 0.046791 0.044179 0.083870 0.000130 0.000942 0.003132 0.003093 0.006758 0.022635 0.119232 0.044938 0.703706 0.217376 0.460033 0.1 1 NGTB40N120FL2WG Figure 26. Test Circuit for Switching Characteristics Figure 27. Definition of Turn On Waveform www.onsemi.com 8 NGTB40N120FL2WG Figure 28. Definition of Turn Off Waveform www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AM ISSUE C DATE 07 SEP 2021 GENERIC MARKING DIAGRAMS* XXXXXXXXX AYWWG XXXXXXXXX XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON77284F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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