NGTB40N120L3WG

DATA SHEET www.onsemi.com IGBT - Ultra Field Stop NGTB40N120L3WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. 40 A, 1200 V VCEsat = 1.55 V Eoff = 1.5 mJ C G Features • • • • • E Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for Low VCEsat These are Pb−Free Devices G Typical Applications • Solar Inverter and UPS • Industrial Switching • Welding C E TO−247 CASE 340AM MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter Voltage VCES 1200 V Collector Current @ TC = 25°C @ TC = 100°C IC Pulsed Collector Current, Tpulse Limited by TJmax Diode Forward Current @ TC = 25°C @ TC = 100°C ICM IF A 160 40 160 40N120L3 AYWWG A A 160 40 Diode Pulsed Current, Tpulse Limited by TJmax IFM 160 A Gate−emitter Voltage Transient Gate−emitter Voltage (tpulse = 5 ms, D < 0.10) VGE ±20 ±30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating Junction Temperature Range TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C 40N120L3 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package W 454 227 ORDERING INFORMATION Device NGTB40N120L3WG Package Shipping TO−247 (Pb−Free) 30 Units / Rail Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2016 October, 2021 − Rev. 3 1 Publication Order Number: NGTB40N120L3W/D NGTB40N120L3WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.33 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.61 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 175°C VCEsat − − 1.55 2.0 1.8 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175°C ICES − − − 0.5 0.4 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 200 nA Input capacitance Cies − 4912 − pF Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 140 − Cres − 80 − Qg − 220 − Qge − 42 − Qgc − 110 − td(on) − 18 − DYNAMIC CHARACTERISTIC Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 40 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time tr − 30 − td(off) − 150 − tf − 131 − Eon − 1.5 − Eoff − 1.5 − Total switching loss Ets − 3.0 − Turn−on delay time td(on) − 18 − tr − 31 − td(off) − 156 − tf − 220 − Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 15 V Turn−off switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 175°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 15 V ns mJ ns mJ Eon − 2.0 − Turn−off switching loss Eoff − 2.3 − Total switching loss Ets − 4.3 − VF − − 3.0 2.8 3.4 − V trr − 86 − ns Qrr − 0.56 − mc Irrm − 12 − A dIrrm/dt − −210 − A/ms DIODE CHARACTERISTICS Forward voltage VGE = 0 V, IF = 40 A VGE = 0 V, IF = 40 A TJ = 175°C Reverse recovery time Reverse recovery charge Reverse recovery current Diode peak rate of fall of reverse recovery current during tb TJ = 25°C IF = 40 A, VR = 600 V diF/dt = 500 A/ms www.onsemi.com 2 NGTB40N120L3WG ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit trr − 136 − ns DIODE CHARACTERISTICS Reverse recovery time Reverse recovery charge Reverse recovery current Diode peak rate of fall of reverse recovery current during tb TJ = 125°C IF = 40 A, VR = 600 V diF/dt = 500 A/ms Qrr − 1.47 − mc Irrm − 20 − A dIrrm/dt − −212 − A/ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NGTB40N120L3WG TYPICAL CHARACTERISTICS 11 V 120 100 80 10 V 60 40 9V 20 7V 0 160 1 2 3 5 4 6 7 10 V 60 40 9V 20 7−8 V 9V 40 8V 7V 20 0 1 2 3 5 4 6 7 1 2 3 5 4 6 7 8 120 11 V 100 10 V 80 60 9V 40 8V 20 7V 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Output Characteristics 140 120 100 80 60 40 TJ = 175°C 20 TJ = 25°C 2 4 6 8 10 12 14 8 2.8 2.6 IC = 75 A 2.4 2.2 2.0 IC = 40 A 1.8 1.6 IC = 20 A 1.4 1.2 1.0 −75 −50 −25 0 25 50 75 100 125 150 175 200 VGE, GATE−EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Transfer Characteristics Figure 6. VCE(sat) vs. TJ www.onsemi.com 4 8 VGE = 20 to 13 V TJ = 175°C 140 0 160 IC, COLLECTOR CURRENT (A) 60 160 VGE = 20 to 13 V 80 0 10 V 80 Figure 2. Output Characteristics 100 0 100 Figure 1. Output Characteristics 11 V 0 11 V VCE, COLLECTOR−EMITTER VOLTAGE (V) 120 0 120 0 8 VGE = 20 to 13 V TJ = 150°C 140 VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = −55°C 140 8V IC, COLLECTOR CURRENT (A) 0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 140 160 VGE = 20 to 13 V TJ = 25°C VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 160 NGTB40N120L3WG TYPICAL CHARACTERISTICS 10,000 100 90 1000 IF, FORWARD CURRENT (A) CAPACITANCE (pF) Cies TJ = 25°C Coes 100 Cres 80 TJ = 175°C 70 TJ = 25°C 60 50 40 30 20 10 0 10 20 30 40 50 60 70 80 90 0 100 2.1 12 10 8 6 VCE = 600 V VGE = 15 V IC = 40 A 4 2 0 50 2.5 3.0 3.5 4.0 100 150 200 250 1.7 Eon 1.5 1.3 1.1 VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 0.9 0.7 0 40 60 80 100 120 140 160 180 200 Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature 6 td(off) 100 tr td(on) VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 20 20 TJ, JUNCTION TEMPERATURE (°C) tf 40 60 80 VCE = 600 V VGE = 15 V TJ = 175°C Rg = 10 W 5 4 Eoff Eon 3 2 1 0 100 120 140 160 180 200 10 20 30 40 50 60 70 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. Temperature Figure 12. Switching Loss vs. IC www.onsemi.com 5 4.5 Eoff QG, GATE CHARGE (nC) SWITCHING LOSS (mJ) SWITCHING TIME (ns) 2.0 1.9 0.5 0.3 1000 0 1.5 Figure 8. Diode Forward Characteristics 14 1 1.0 Figure 7. Typical Capacitance 2.3 10 0.5 VF, FORWARD VOLTAGE (V) 16 0 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 10 80 90 NGTB40N120L3WG TYPICAL CHARACTERISTICS 1000 9 td(off) tr td(on) 10 1 VCE = 600 V VGE = 15 V TJ = 175°C Rg = 10 W 10 20 7 SWITCHING LOSS (mJ) SWITCHING TIME (ns) tf 100 6 4 2 1 30 40 50 60 70 80 0 90 20 10 30 40 50 70 60 Rg, GATE RESISTOR (W) Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. RG 3.5 SWITCHING LOSS (mJ) 3.0 tf td(on) tr 100 VCE = 600 V VGE = 15 V TJ = 175°C IC = 40 A 0 10 20 30 40 50 60 2.5 Eoff 2.0 1.5 Eon VGE = 15 V IC = 40 A Rg = 10 W TJ = 175°C 1.0 0.5 0 70 350 400 450 500 550 600 650 700 750 800 Rg, GATE RESISTOR (W) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. RG Figure 16. Switching Loss vs. VCE 1000 VGE = 15 V IC = 40 A Rg = 10 W TJ = 175°C tf IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) 0 IC, COLLECTOR CURRENT (A) 1000 SWITCHING TIME (ns) Eoff 3 td(off) td(off) 100 tr td(on) 10 Eon 5 1000 10 VCE = 600 V VGE = 15 V TJ = 175°C IC = 40 A 8 350 400 450 500 550 600 650 700 750 100 50 ms 100 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 800 dc operation 10 1 10 1 ms 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Switching Time vs. VCE Figure 18. Safe Operating Area www.onsemi.com 6 10,000 NGTB40N120L3WG TYPICAL CHARACTERISTICS 10 VGE = 15 V, TC = 175°C 1 10 100 1000 10,000 VR = 400 V 300 TJ = 175°C, IF = 40 A 250 200 150 100 TJ = 25°C, IF = 40 A 50 0 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 19. Reverse Bias Safe Operating Area Figure 20. trr vs. diF/dt 3.5 3.0 TJ = 175°C, IF = 40 A 2.5 2.0 1.5 TJ = 25°C, IF = 40 A 1.0 0.5 0 350 VCE, COLLECTOR−EMITTER VOLTAGE (V) VR = 400 V 100 300 500 700 900 1100 Irm, REVERSE RECOVERY CURRENT (A) 1 Qrr, REVERSE RECOVERY CHARGE (mC) trr, REVERSE RECOVERY TIME (ns) 100 TJ = 175°C, IF = 40 A 40 30 20 TJ = 25°C, IF = 40 A 10 0 VR = 400 V 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 21. Qrr vs. diF/dt Figure 22. Irm vs. diF/dt 4.5 4.0 IF = 75 A 3.5 IF = 40 A 3.0 2.5 IF = 20 A 2.0 1.5 1.0 −75 −50 −25 0 25 50 75 100 125 150 175 200 TJ, JUNCTION TEMPERATURE (°C) Figure 23. VF vs. TJ www.onsemi.com 7 1100 50 diF/dt, DIODE CURRENT SLOPE (A/ms) VF, FORWARD VOLTAGE (V) IC, COLLECTOR CURRENT (A) 1000 1100 NGTB40N120L3WG TYPICAL CHARACTERISTICS 180 Ramp, TC = 110°C 160 140 Square, TC = 110°C Ipk (A) 120 100 Ramp, TC = 80°C Square, TC = 80°C 80 60 40 20 0 0.1 0.01 1 10 100 1000 FREQUENCY (kHz) Figure 24. Collector Current vs. Switching Frequency R(t), SQUARE−WAVE PEAK (°C/W) 1 RqJC = 0.33 50% Duty Cycle 0.1 20% 10% 5% 0.01 2% Junction R1 R2 Rn Case Ci = ti/Ri C1 0.001 C2 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.0001 0.000001 0.00001 Cn 0.0001 0.001 0.01 Ri (°C/W) Ci (J/W) 0.0065 0.0811 0.0186 0.1007 0.1115 0.0172 0.0154 0.0039 0.0539 0.0314 0.0897 1.8437 1 0.1 ON−PULSE WIDTH (s) R(t), SQUARE−WAVE PEAK (°C/W) Figure 25. IGBT Transient Thermal Impedance 1 RqJC = 0.61 50% Duty Cycle 20% Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.1 10% Junction 5% R2 Rn C1 C2 Cn Case Ci = ti/Ri 2% 0.01 R1 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 ON−PULSE WIDTH (s) Figure 26. Diode Transient Thermal Impedance www.onsemi.com 8 0.1 Ri (°C/W) Ci (J/W) 0.011089 0.015127 0.015703 0.048571 0.057211 0.031254 0.026926 0.077082 0.140155 0.181237 0.000090 0.000661 0.002014 0.002059 0.005527 0.031996 0.117443 0.129731 0.225628 0.551763 1 NGTB40N120L3WG Figure 27. Test Circuit for Switching Characteristics Figure 28. Definition of Turn On Waveform www.onsemi.com 9 NGTB40N120L3WG Figure 29. Definition of Turn Off Waveform www.onsemi.com 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AM ISSUE C DATE 07 SEP 2021 GENERIC MARKING DIAGRAMS* XXXXXXXXX AYWWG XXXXXXXXX XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON77284F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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