NGTB25N120FL2WG

DATA SHEET www.onsemi.com IGBT - Field Stop II NGTB25N120FL2WG 25 A, 1200 V VCEsat = 2.0 V Eoff = 0.60 mJ This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. G Features • • • • • • C Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 ms Short Circuit Capability These are Pb−Free Devices E G Typical Applications • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Welding MARKING DIAGRAM Symbol Value Unit Collector−emitter Voltage VCES 1200 V Collector Current @ TC = 25°C @ TC = 100°C IC Pulsed Collector Current, Tpulse Limited by TJmax Diode Forward Current @ TC = 25°C @ TC = 100°C ICM IF A 50 25 25N120FL2 AYWWG 100 A A 50 25 Diode Pulsed Current, Tpulse Limited by TJmax IFM 100 A Gate−emitter Voltage Transient Gate−emitter Voltage (Tpulse = 5 ms, D < 0.10) VGE ±20 ±30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Short Circuit Withstand Time VGE = 15 V, VCE = 500 V, TJ ≤ 150°C TSC 10 ms TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C Operating Junction Temperature Range E TO−247 CASE 340AM ABSOLUTE MAXIMUM RATINGS Rating C 25N120FL2 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package W 385 192 ORDERING INFORMATION Device Package Shipping NGTB25N120FL2WG TO−247 (Pb−Free) 30 Units / Rail Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2016 October, 2021 − Rev. 5 1 Publication Order Number: NGTB25N120FL2W/D NGTB25N120FL2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.39 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.63 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 25 A VGE = 15 V, IC = 25 A, TJ = 175°C VCEsat − − 2.00 2.40 2.40 − V VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175°C ICES − − − 2.5 0.4 − mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 4420 − pF Coes − 151 − Cres − 81 − Qg − 178 − Qge − 39 − Qgc − 83 − td(on) − 87 − tr − 28 − td(off) − 179 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 25 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 600 V, IC = 25 A Rg = 10 W VGE = 0 V/ 15V tf − 136 − Eon − 1.95 − Turn−off switching loss Eoff − 0.60 − Total switching loss Ets − 2.55 − Turn−on delay time td(on) − 84 − Turn−on switching loss Rise time Turn−off delay time Fall time TJ = 150°C VCC = 600 V, IC = 25 A Rg = 10 W VGE = 0 V/ 15V tr − 29 − td(off) − 185 − ns mJ ns tf − 245 − Eon − 2.39 − Turn−off switching loss Eoff − 1.26 − Total switching loss Ets − 3.65 − VGE = 0 V, IF = 25 A VGE = 0 V, IF = 50 A, TJ = 175°C VF − − 2.10 2.30 2.60 − V TJ = 25°C IF = 25 A, VR = 400 V diF/dt = 200 A/ms trr − 154 − ns Qrr − 1.3 − mc Irrm − 15 − A Turn−on switching loss mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB25N120FL2WG TYPICAL CHARACTERISTICS IC, COLLECTOR CURRENT (A) 70 11 V 60 50 10 V 40 30 9V 20 10 0 7V 0 1 2 3 8V 4 5 7 60 11 V 50 10 V 40 30 9V 20 8V 7V 10 0 1 2 3 4 5 7 6 Figure 1. Output Characteristics Figure 2. Output Characteristics TJ = −55°C 11 V 60 50 40 10 V 30 20 9V 8V 1 2 8 45 70 0 70 VCE, COLLECTOR−EMITTER VOLTAGE (V) 80 10 0 VGE = 13 V to 20 V 80 0 8 TJ = 150°C 90 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 13 V to 20 V 90 6 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) TJ = 25°C 80 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) 100 VGE = 13 V to 20 V 90 3 4 5 6 7 40 35 30 25 20 15 TJ = 150°C 10 TJ = 25°C 5 0 8 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 10,000 4.0 IC = 50 A 3.5 Cies C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 100 3.0 IC = 25 A 2.5 2.0 IC = 15 A 1.5 1.0 1000 Coes 100 Cres 10 TJ = 25°C 0.5 0 −75 −50 −25 0 25 50 1 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance www.onsemi.com 3 NGTB25N120FL2WG TYPICAL CHARACTERISTICS 16 TJ = 25°C 30 TJ = 150°C 25 20 15 10 5 0 3.0 1.0 1.5 2.0 2.5 3.0 2.0 3.5 14 12 10 8 6 VCE = 600 V VGE = 25 V IC = 25 A 4 2 0 0 50 200 150 100 VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC) Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge 1000 VCE = 600 V VGE = 15 V IC = 25 A Rg = 10 W 2.5 SWITCHING LOSS (mJ) 0.5 SWITCHING TIME (ns) 0 Eon 1.5 Eoff 1.0 VCE = 600 V VGE = 15 V IC = 25 A Rg = 10 W tf td(off) td(on) 100 tr 0.5 0 0 20 40 60 80 100 120 140 20 40 60 80 100 120 140 Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 1000 Eon 3 Eoff 2 1 0 0 TJ, JUNCTION TEMPERATURE (°C) VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 4 10 160 TJ, JUNCTION TEMPERATURE (°C) 5 SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 35 SWITCHING TIME (ns) IF, FORWARD CURRENT (A) 40 160 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W tf td(off) 100 td(on) tr 0 10 20 30 40 50 10 60 0 10 20 30 40 50 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC www.onsemi.com 4 60 NGTB25N120FL2WG TYPICAL CHARACTERISTICS 1000 VCE = 600 V VGE = 15 V TJ = 150°C IC = 25 A 5 4 td(off) EON SWITCHING TIME (ns) SWITCHING LOSS (mJ) 6 3 2 EOFF 5 15 25 35 45 55 65 75 100 10 85 tr VCE = 600 V VGE = 15 V TJ = 150°C IC = 25 A 25 35 45 55 65 75 Rg, GATE RESISTOR (W) Figure 14. Switching Time vs. Rg 1000 SWITCHING TIME (ns) EON 2 EOFF 1 350 400 450 500 550 600 650 700 750 VGE = 15 V TJ = 150°C IC = 25 A Rg = 10 W 85 tf td(off) 100 td(on) tr 10 800 350 400 450 500 550 600 650 700 750 800 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 IC, COLLECTOR CURRENT (A) 1000 100 10 dc operation 50 ms 100 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 15 Rg, GATE RESISTOR (W) VGE = 15 V TJ = 150°C IC = 25 A Rg = 10 W 3 0 5 Figure 13. Switching Loss vs. Rg 4 SWITCHING LOSS (mJ) td(on) 1 0 IC, COLLECTOR CURRENT (A) tf 1 10 100 1 ms 1000 100 10 VGE = 15 V, TC = 125°C 1 10k 1 10 100 1000 10k VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area www.onsemi.com 5 NGTB25N120FL2WG TYPICAL CHARACTERISTICS SQUARE−WAVE PEAK R(t) (°C/W) 1 50% Duty Cycle RqJC = 0.39 0.1 20% 10% 5% R1 Junction 0.01 C1 0.001 0.0001 R2 Rn Case 2% Ci (J/°C) 0.0931 0.0559 0.1139 0.1187 0.0034 0.0179 0.0278 0.0842 0.0079 3.9912 238.3112 Cn C2 0.0004 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.000001 Ri (°C/W) 0.00001 0.001 0.0001 0.01 0.1 1 ON−PULSE WIDTH (s) Figure 19. IGBT Die Self−heating Square−wave Duty Cycle Transient Thermal Response SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.635 50% Duty Cycle 20% 0.1 Junction R1 R2 Rn C1 C2 Cn Case 10% 5% 2% 0.01 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 Ri (°C/W) Ci (J/°C) 0.011310 0.014776 0.017184 0.042148 0.078172 0.047623 0.036547 0.075548 0.175265 0.135917 0.000088 0.000677 0.001840 0.002373 0.004045 0.020998 0.086526 0.132366 0.180428 0.735746 0.1 ON−PULSE WIDTH (s) Figure 20. Diode Die Self−heating Square−wave Duty Cycle Transient Thermal Response www.onsemi.com 6 1 NGTB25N120FL2WG 120 100 Ipk (A) 80 TC = 80°C 60 TC = 110°C 40 20 0 0.01 0.1 1 Freq (kHz) 10 Figure 21. Collector Current vs. Switching Frequency Figure 22. Test Circuit for Switching Characteristics www.onsemi.com 7 100 1000 NGTB25N120FL2WG Figure 23. Definition of Turn On Waveform www.onsemi.com 8 NGTB25N120FL2WG Figure 24. Definition of Turn Off Waveform www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AM ISSUE C DATE 07 SEP 2021 GENERIC MARKING DIAGRAMS* XXXXXXXXX AYWWG XXXXXXXXX XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON77284F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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