NGTB35N60FL2WG

NGTB35N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com Features • • • • • • 35 A, 600 V VCEsat = 1.70 V EOFF = 0.28 mJ Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 ms Short−Circuit Capability These are Pb−Free Devices C Typical Applications • Solar Inverters • Uninterruptible Power Supplies (UPS) • Welding G E ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Collector−emitter voltage Rating VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC Diode Forward Current @ TC = 25°C @ TC = 100°C IF A 70 35 C A IFM 120 A Pulsed collector current, Tpulse limited by TJmax ICM 120 A Short−circuit withstand time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C tSC 5 ms Gate−emitter voltage VGE MARKING DIAGRAM 35N60FL2 AYWWG $20 V V $30 Transient gate−emitter voltage (TPULSE = 5 ms, D < 0.10) Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C W 300 150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. December, 2016 − Rev. 5 TO−247 CASE 340AL E 70 35 Diode Pulsed Current TPULSE Limited by TJ Max © Semiconductor Components Industries, LLC, 2016 G 1 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping NGTB35N60FL2WG TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB35N60FL2W/D NGTB35N60FL2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.50 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.00 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 35 A VGE = 15 V, IC = 35 A, TJ = 175°C VCEsat 1.50 − 1.70 2.20 2.00 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 175°C ICES − − − − 0.2 4.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 100 nA Cies − 3115 − pF Coes − 149 − Cres − 88 − Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 35 A, VGE = 15 V Gate to collector charge Qg − 125 − Qge − 30 − Qgc − 63 − td(on) − 72 − tr − 40 − td(off) − 132 − nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 400 V, IC = 35 A Rg = 10 W VGE = 0 V/ 15 V tf − 75 − Eon − 0.84 − Eoff − 0.28 − Total switching loss Ets − 1.12 − Turn−on delay time td(on) − 70 − tr − 38 − td(off) − 135 − tf − 96 − Eon − 1.05 − Turn−off switching loss Eoff − 0.50 − Total switching loss Ets − 1.55 − VF 1.50 − 2.20 2.25 2.90 − Turn−on switching loss Turn−off switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 400 V, IC = 35 A Rg = 10 W VGE = 0 V/ 15 V ns mJ ns mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current VGE = 0 V, IF = 35 A VGE = 0 V, IF = 35 A, TJ = 175°C TJ = 25°C IF = 35 A, VR = 200 V diF/dt = 200 A/ms TJ = 175°C IF = 35 A, VR = 400 V diF/dt = 200 A/ms V trr − 68 − ns Qrr − 265 − nC Irrm − 7 − A trr − 156 − ns Qrr − 836 − nC Irrm − 8.43 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB35N60FL2WG TYPICAL CHARACTERISTICS 140 140 VGE = 20 to 15 V 13 V 100 80 60 11 V 40 10 V 7V 20 0 1 2 3 4 9V 8V 6 5 15 V VGE = 20 to 17 V 100 13 V 80 60 11 V 40 10 V 9V 8V 7V 20 0 0 8 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 8 140 TJ = −55°C VGE = 20 to 15 V 120 13 V 100 80 60 11 V 40 10 V 20 0 TJ = 150°C 120 VCE, COLLECTOR−EMITTER VOLTAGE (V) 140 IC, COLLECTOR CURRENT (A) 7 IC, COLLECTOR CURRENT (A) 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 120 7V 9V 8V 0 1 2 3 4 5 6 120 TJ = 25°C 100 80 TJ = 150°C 60 40 20 0 7 0 8 2 4 6 8 10 12 14 16 18 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.75 3.50 3.25 3.00 2.75 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 −75 −50 −25 10,000 IC = 70 A Cies C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) TJ = 25°C IC = 35 A IC = 15 A IC = 5 A 1000 Coes 100 Cres TJ = 25°C 10 0 25 50 75 0 100 125 150 175 200 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance www.onsemi.com 3 NGTB35N60FL2WG TYPICAL CHARACTERISTICS 20 VGE, GATE−EMITTER VOLTAGE (V) 110 IF, FORWARD CURRENT (A) 100 90 80 70 TJ = 25°C 60 TJ = 150°C 50 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.5 3.0 16 14 12 10 8 6 4 VCE = 480 V VGE = 15 V IC = 35 A 2 0 4.0 0 60 40 20 80 QG, GATE CHARGE (nC) Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge 1000 1.25 SWITCHING TIME (ns) VCE = 400 V VGE = 15 V IC = 35 A Rg = 10 W 1.5 120 100 VF, FORWARD VOLTAGE (V) 1.75 SWITCHING LOSS (mJ) 18 Eon 1 0.75 Eoff 0.5 140 VCE = 400 V VGE = 15 V IC = 35 A Rg = 10 W td(off) tf 100 td(on) tr 0.25 0 0 20 40 60 80 100 120 140 10 160 0 20 Figure 9. Switching Loss vs. Temperature Eon 2 1.5 Eoff 1 100 120 140 160 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W td(off) tf 100 td(on) tr 0.5 0 15 80 1000 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W SWITCHING TIME (ns) SWITCHING LOSS (mJ) 2.5 60 Figure 10. Switching Time vs. Temperature 3.5 3 40 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) 20 25 30 35 40 45 50 55 60 10 15 65 70 75 20 25 30 35 40 45 50 55 60 65 70 75 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC www.onsemi.com 4 NGTB35N60FL2WG TYPICAL CHARACTERISTICS 10000 VCE = 400 V VGE = 15 V TJ = 150°C IC = 35 A SWITCHING LOSS (mJ) 3.5 3 SWITCHING TIME (ns) 4 Eon 2.5 2 1.5 Eoff 1 1000 td(off) tf td(on) 100 VCE = 400 V VGE = 15 V TJ = 150°C IC = 35 A tr 0.5 0 10 5 15 25 35 45 55 75 65 5 45 55 65 75 Figure 14. Switching Time vs. Rg 85 1000 IC = 35 A VGE = 15 V TJ = 150°C Rg = 10 W Eon SWITCHING TIME (ns) SWITCHING LOSS (mJ) 1.4 35 Figure 13. Switching Loss vs. Rg IC = 35 A VGE = 15 V TJ = 150°C Rg = 10 W 1.6 25 Rg, GATE RESISTOR (W) 2 1.8 15 Rg, GATE RESISTOR (W) 1.2 1 Eoff 0.8 0.6 0.4 td(off) 100 tf td(on) tr 0.2 10 175 0 150 200 250 300 350 400 450 500 550 600 275 325 375 425 475 525 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 575 1000 1000 1 ms IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 225 100 ms 100 50 ms dc operation 10 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 1 10 100 1000 VGE = 15 V, TC = 125°C 100 10 1 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area www.onsemi.com 5 NGTB35N60FL2WG Qrr, REVERSE RECOVERY CHARGE (mC) TYPICAL CHARACTERISTICS 140 TJ = 175°C, IF = 35 A 120 100 80 TJ = 25°C, IF = 35 A 60 40 Irm, REVERSE RECOVERY CURRENT (A) 100 300 500 700 900 1100 2.0 1.5 TJ = 175°C, IF = 35 A 1.0 TJ = 25°C, IF = 35 A 0.5 0 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 19. trr vs. diF/dt (VR = 400 V) Figure 20. Qrr vs. diF/dt (VR = 400 V) 30 1100 3.5 VF, FORWARD VOLTAGE (V) trr, REVERSE RECOVERY TIME (ns) 160 TJ = 175°C, IF = 35 A 20 TJ = 25°C, IF = 35 A 10 0 100 300 500 700 900 1100 IF = 60 A 3.0 IF = 50 A 2.5 IF = 35 A 2.0 1.5 1.0 −75 −50 −25 0 25 50 75 100 125 150 175 200 diF/dt, DIODE CURRENT SLOPE (A/ms) TJ, JUNCTION TEMPERATURE (°C) Figure 21. Irm vs. diF/dt (VR = 400 V) Figure 22. VF vs. TJ www.onsemi.com 6 NGTB35N60FL2WG TYPICAL CHARACTERISTICS 1 50% Duty Cycle R(t) (°C/W) 0.1 RqJC = 0.50 20% 10% 5% 0.01 Junction R1 2% R2 Rn C2 Cn Case Ci = ti/Ri 0.001 C1 Single Pulse Ri (°C/W) 0.0642 0.0608 0.0507 0.1706 0.1422 0.0094 ti (sec) 0.0016 0.0052 0.0197 0.0185 0.0703 3.3481 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 23. IGBT Transient Thermal Impedance 1 RqJC = 1.0 50% Duty Cycle R(t) (°C/W) 20% Junction R1 10% 0.1 5% R2 Rn C2 Cn Ci = ti/Ri 2% C1 Single Pulse 0.01 0.000001 0.00001 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.001 0.01 PULSE TIME (sec) Figure 24. Diode Transient Thermal Impedance www.onsemi.com 7 Case Ri (°C/W) ti (sec) 0.015509 0.020310 0.022591 0.050667 0.93366 0.195285 0.133203 0.173839 0.251384 0.039982 0.000064 0.000492 0.001400 0.001974 0.003387 0.005121 0.023740 0.047425 0.125795 2.501137 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE D DATE 17 MAR 2017 SCALE 1:1 E E2/2 D SEATING PLANE Q 2X 2 M B A M NOTE 6 S NOTE 3 1 0.635 P A E2 NOTE 4 4 DIM A A1 b b2 b4 c D E E2 e F L L1 P Q S 3 L1 F NOTE 5 L 2X B A NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. b2 c b4 3X e b 0.25 A1 NOTE 7 M B A M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.07 1.33 1.65 2.35 2.60 3.40 0.45 0.68 20.80 21.34 15.50 16.25 4.32 5.49 5.45 BSC 2.655 --19.80 20.80 3.81 4.32 3.55 3.65 5.40 6.20 6.15 BSC GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON16119F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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