NGTB40N60FL2WG

NGTB40N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com Features • • • • • • Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 ms Short−Circuit Capability These are Pb−Free Devices 40 A, 600 V VCEsat = 1.7 V EOFF = 0.44 mJ C Typical Applications • Solar Inverters • Uninterruptible Power Supplies (UPS) • Welding G E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC Diode Forward Current @ TC = 25°C @ TC = 100°C IF A 80 40 C A IFM 160 A Pulsed collector current, Tpulse limited by TJmax ICM 160 A Short−circuit withstand time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C tSC 5 ms Gate−emitter voltage VGE MARKING DIAGRAM 40N60FL2 AYWWG Transient gate−emitter voltage (TPULSE = 5 ms, D < 0.10) $20 V $30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C W 366 183 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. September, 2016 − Rev. 2 E 80 40 Diode Pulsed Current TPULSE Limited by TJ Max © Semiconductor Components Industries, LLC, 2015 TO−247 CASE 340AL G 1 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping NGTB40N60FL2WG TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB40N60FL2W/D NGTB40N60FL2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.41 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.00 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 175°C VCEsat 1.50 − 1.70 1.85 2.00 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 175°C ICES − − − − 0.5 6.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 4060 − pF Coes − 179 − Cres − 115 − Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 40 A, VGE = 15 V Gate to collector charge Qg − 170 − Qge − 41 − Qgc − 87 − td(on) − 84 − tr − 40 − td(off) − 177 − nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 400 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15 V tf − 70 − Eon − 0.97 − Eoff − 0.44 − Total switching loss Ets − 1.41 − Turn−on delay time td(on) − 82 − tr − 40 − td(off) − 183 − tf − 93 − Eon − 1.20 − Turn−off switching loss Eoff − 0.76 − Total switching loss Ets − 1.96 − VF 1.50 − 2.20 2.40 2.90 − Turn−on switching loss Turn−off switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 400 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15 V ns mJ ns mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current VGE = 0 V, IF = 40 A VGE = 0 V, IF = 40 A, TJ = 175°C TJ = 25°C IF = 40 A, VR = 200 V diF/dt = 200 A/ms TJ = 175°C IF = 40 A, VR = 400 V diF/dt = 200 A/ms V trr − 72 − ns Qrr − 275 − nC Irrm − 6.7 − A trr − 158 − ns Qrr − 980 − nC Irrm − 8.5 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB40N60FL2WG TYPICAL CHARACTERISTICS 160 TJ = 25°C 140 13 V 120 100 80 11 V 60 10 V 40 7V 20 9V 8V 0 1 2 3 4 5 IC, COLLECTOR CURRENT (A) VGE = 17 V to 20 V 120 13 V 100 80 11 V 60 10 V 40 7V 9V 20 8V 6 7 0 8 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 120 TJ = −55°C 100 80 11 V 60 10 V 40 7V 20 9V 8V 0 1 2 3 4 8 160 13 V VGE = 20 V to 15 V 0 15 V VCE, COLLECTOR−EMITTER VOLTAGE (V) 160 140 TJ = 150°C 140 0 IC, COLLECTOR CURRENT (A) 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) VGE = 15 V to 20 V TJ = 25°C 140 120 100 TJ = 150°C 80 60 40 20 0 5 6 7 8 0 2 4 6 12 10 8 14 16 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.00 18 10,000 2.75 Cies IC = 60 A 2.50 2.25 IC = 40 A 2.00 1.75 IC = 20 A 1.50 1.25 IC = 5 A 1.00 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 160 1000 Coes 100 Cres 0.75 0.50 −75 −50 −25 0 25 50 10 75 100 125 150 175 200 TJ = 25°C 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance www.onsemi.com 3 NGTB40N60FL2WG TYPICAL CHARACTERISTICS 20 VGE, GATE−EMITTER VOLTAGE (V) 110 IF, FORWARD CURRENT (A) 100 TJ = 25°C 90 80 70 TJ = 150°C 60 50 40 30 20 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 14 12 10 8 6 VCE = 480 V VGE = 15 V IC = 40 A 4 2 0 4.0 50 100 VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC) Figure 8. Typical Gate Charge 1.50 1.25 SWITCHING TIME (ns) 1000 VCE = 400 V VGE = 15 V IC = 40 A Rg = 10 W Eon 1.00 0.75 Eoff 0.50 200 150 Figure 7. Diode Forward Characteristics 1.75 SWITCHING LOSS (mJ) 16 0 0 VCE = 400 V VGE = 15 V IC = 40 A Rg = 10 W td(off) tf 100 td(on) tr 0.25 0 10 0 20 40 60 80 100 120 140 0 160 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 160 1000 4.5 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 3.5 Eon SWITCHING TIME (ns) 4.0 SWITCHING LOSS (mJ) 18 3.0 2.5 2.0 Eoff 1.5 1.0 td(off) tf 100 td(on) VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W tr 0.5 0 5 15 25 35 45 55 65 75 10 85 5 15 25 35 45 55 65 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC www.onsemi.com 4 75 85 NGTB40N60FL2WG TYPICAL CHARACTERISTICS 1000 VCE = 400 V VGE = 15 V TJ = 150°C IC = 40 A SWITCHING LOSS (mJ) 4.5 4.0 3.5 SWITCHING TIME (ns) 5.0 Eon 3.0 2.5 2.0 Eoff 1.5 1.0 0.5 0 15 25 35 45 55 65 tr 100 VCE = 400 V VGE = 15 V TJ = 150°C IC = 40 A 75 5 15 25 35 45 55 Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W) Figure 14. Switching Time vs. Rg SWITCHING TIME (ns) 1000 VGE = 15 V TJ = 150°C IC = 40 A Rg = 10 W 2.0 Eon 1.5 Eoff 1.0 0.5 0 150 200 65 Figure 13. Switching Loss vs. Rg 2.5 SWITCHING LOSS (mJ) td(on) tf 10 5 75 85 VGE = 15 V TJ = 150°C IC = 40 A Rg = 10 W td(off) td(on) 100 tf tr 10 250 300 350 400 450 500 175 550 600 225 275 325 375 425 475 525 575 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 1000 100 dc operation 10 50 ms 100 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 1 10 1 ms IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) td(off) 100 10 VGE = 15 V, TC = 150°C 1 100 1000 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area www.onsemi.com 5 NGTB40N60FL2WG Qrr, REVERSE RECOVERY CHARGE (mC) TYPICAL CHARACTERISTICS 140 TJ = 175°C, IF = 40 A 120 100 80 TJ = 25°C, IF = 40 A 60 40 Irm, REVERSE RECOVERY CURRENT (A) 100 300 500 700 900 1100 2.0 1.5 TJ = 175°C, IF = 40 A 1.0 TJ = 25°C, IF = 40 A 0.5 0 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 19. trr vs. diF/dt (VR = 400 V) Figure 20. Qrr vs. diF/dt (VR = 400 V) 30 1100 3.5 VF, FORWARD VOLTAGE (V) trr, REVERSE RECOVERY TIME (ns) 160 TJ = 175°C, IF = 40 A 20 TJ = 25°C, IF = 40 A 10 0 100 300 500 700 900 1100 IF = 60 A 3.0 IF = 40 A 2.5 2.0 IF = 20 A 1.5 1.0 −75 −50 −25 0 25 50 75 100 125 150 175 200 diF/dt, DIODE CURRENT SLOPE (A/ms) TJ, JUNCTION TEMPERATURE (°C) Figure 21. Irm vs. diF/dt (VR = 400 V) Figure 22. VF vs. TJ www.onsemi.com 6 NGTB40N60FL2WG TYPICAL CHARACTERISTICS SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.41 50% Duty Cycle 0.1 20% 10% 5% R1 Junction R2 Rn Case Ri (°C/W) Ci (J/°C) 0.0537 0.0350 0.0426 0.1183 0.1455 0.0019 0.0090 0.0235 0.0267 0.0687 0.0191 1.6573 2% 0.01 C1 0.001 Cn C2 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.0001 0.000001 0.00001 0.001 0.0001 0.01 0.1 1 ON−PULSE WIDTH (s) Figure 23. IGBT Transient Thermal Impedance SQUARE−WAVE PEAK R(t) (°C/W) 1 50% Duty Cycle RqJC = 1.00 20% 10% 0.1 Junction R1 R2 Rn C1 C2 Cn 5% 2% Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 ON−PULSE WIDTH (s) Figure 24. Diode Transient Thermal Impedance www.onsemi.com 7 Case Ri (°C/W) Ci (J/°C) 0.015509 0.020310 0.022591 0.050667 0.093366 0.195285 0.133203 0.173839 0.251384 0.039982 0.000064 0.000492 0.001400 0.001974 0.003387 0.005121 0.023740 0.057525 0.125795 2.501137 0.1 1 NGTB40N60FL2WG Figure 25. Test Circuit for Switching Characteristics Figure 26. Definition of Turn On Waveform www.onsemi.com 8 NGTB40N60FL2WG Figure 27. Definition of Turn Off Waveform www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE D DATE 17 MAR 2017 SCALE 1:1 E E2/2 D SEATING PLANE Q 2X 2 M B A M NOTE 6 S NOTE 3 1 0.635 P A E2 NOTE 4 4 DIM A A1 b b2 b4 c D E E2 e F L L1 P Q S 3 L1 F NOTE 5 L 2X B A NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. b2 c b4 3X e b 0.25 A1 NOTE 7 M B A M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.07 1.33 1.65 2.35 2.60 3.40 0.45 0.68 20.80 21.34 15.50 16.25 4.32 5.49 5.45 BSC 2.655 --19.80 20.80 3.81 4.32 3.55 3.65 5.40 6.20 6.15 BSC GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON16119F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative