NGTB60N65FL2WG

DATA SHEET www.onsemi.com IGBT - Field Stop II NGTB60N65FL2WG 60 A, 650 V VCEsat = 1.64 V Eoff = 0.66 mJ This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. C Features • • • • • • Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 ms Short−Circuit Capability These are Pb−Free Devices G E Typical Applications • Solar Inverters • Uninterruptible Power Supplies (UPS) • Welding G Symbol Value Unit Collector−emitter Voltage VCES 650 V Collector Current @ TC = 25°C @ TC = 100°C IC Diode Forward Current @ TC = 25°C @ TC = 100°C IF MARKING DIAGRAM A 100 60 A 100 60 Diode Pulsed Current TPULSE Limited by TJ Max IFM 240 A Pulsed Collector Current, Tpulse Limited by TJmax ICM 240 A Short−circuit Withstand Time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C tSC 5 ms Gate−emitter Voltage VGE ±20 V Transient Gate−emitter Voltage (TPULSE = 5 ms, D < 0.10) E TO−247 CASE 340AM ABSOLUTE MAXIMUM RATINGS Rating C ±30 Power Dissipation @ TC = 25°C @ TC = 100°C PD W Operating Junction Temperature Range TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C 595 265 60N65FL2 AYWWG 60N65FL2 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device NGTB60N65FL2WG Package Shipping TO−247 (Pb−Free) 30 Units / Rail Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2016 October, 2021 − Rev. 2 1 Publication Order Number: NGTB60N65FL2W/D NGTB60N65FL2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.28 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.62 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 650 − − V VGE = 15 V, IC = 60 A VGE = 15 V, IC = 60 A, TJ = 175°C VCEsat 1.50 − 1.64 2.00 2.00 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 650 V VGE = 0 V, VCE = 650 V, TJ = 175°C ICES − − − 5.0 0.1 − mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 7193 − pF VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 311 − Cres − 202 − DYNAMIC CHARACTERISTIC Input capacitance Output capacitance Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 60 A, VGE = 15 V Gate to collector charge Qg − 318 − Qge − 65 − Qgc − 163 − td(on) − 117 − tr − 53 − td(off) − 265 − nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 400 V, IC = 60 A Rg = 10 W VGE = 0 V/ 15 V tf − 75 − Eon − 1.59 − Eoff − 0.66 − Total switching loss Ets − 2.25 − Turn−on delay time td(on) − 113 − tr − 55 − td(off) − 277 − tf − 1.0 − Turn−on switching loss Turn−off switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 400 V, IC = 60 A Rg = 10 W VGE = 0 V/ 15 V ns mJ ns Eon − 2.0 − Turn−off switching loss Eoff − 1.1 − Total switching loss Ets − 3.1 − VF 1.50 − 2.13 2.26 2.80 − V trr − 96 − ns mC mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current VGE = 0 V, IF = 60 A VGE = 0 V, IF = 60 A, TJ = 175°C TJ = 25°C IF = 60 A, VR = 400 V diF/dt = 200 A/ms TJ = 175°C IF = 60 A, VR = 400 V diF/dt = 200 A/ms Qrr − 0.39 − Irrm − 6.8 − A trr − 177 − ns Qrr − 1.53 − mC Irrm − 13 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB60N65FL2WG TYPICAL CHARACTERISTICS IC, COLLECTOR CURRENT (A) TJ = 25°C 160 140 11 V 120 100 10 V 80 60 40 9V 20 8V 7V 7 0 0 200 IC, COLLECTOR CURRENT (A) 200 VGE = 20 V to 13 V 180 1 2 3 4 5 TJ = 150°C 120 11 V 100 10 V 80 60 9V 40 8V 7V 20 0 1 2 3 4 5 7 6 Figure 1. Output Characteristics Figure 2. Output Characteristics TJ = −55°C 11 V 140 120 100 10 V 80 60 7V 40 9V 20 0 8V 1 2 3 4 5 6 7 140 120 100 80 60 40 TJ = 150°C 20 TJ = 25°C 0 8 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 100,000 1.75 C, CAPACITANCE (pF) IF = 60 A 2.00 IF = 50 A 1.50 IF = 25 A 1.25 1.00 −75 −50 −25 8 160 2.25 VF, FORWARD VOLTAGE (V) 140 VCE, COLLECTOR−EMITTER VOLTAGE (V) 160 0 13 V 160 0 8 VGE = 20 V to 15 V 180 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 V to 13 V 180 6 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 200 0 25 50 Cies 10,000 1000 Coes 100 Cres 10 1 75 100 125 150 175 200 TJ = 25°C 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VF vs. TJ Figure 6. Typical Capacitance www.onsemi.com 3 NGTB60N65FL2WG TYPICAL CHARACTERISTICS 26 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 70 60 50 40 30 20 TJ = 150°C 10 0 TJ = 25°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 14 11 8 VCE = 480 V VGE = 15 V IC = 60 A 5 2 −1 0 50 100 150 QG, GATE CHARGE (nC) 300 1000 SWITCHING TIME (ns) Eon 1.5 1.0 Eoff VCE = 400 V VGE = 15 V IC = 60 A Rg = 10 W 0.5 0 6 20 40 60 80 100 120 140 4 160 td(off) td(on) 100 10 180 tf tr VCE = 400 V VGE = 15 V IC = 60 A Rg = 10 W 0 20 40 60 80 100 120 160 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature Eon Eoff 2 td(off) tf 100 td(on) tr VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 1 25 35 180 1000 3 15 140 TJ, JUNCTION TEMPERATURE (°C) VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 5 0 250 200 Figure 8. Typical Gate Charge SWITCHING TIME (ns) SWITCHING LOSS (mJ) 17 VF, FORWARD VOLTAGE (V) 2.0 SWITCHING LOSS (mJ) 20 Figure 7. Diode Forward Characteristics 2.5 0 TCE = 480 V 23 45 55 65 75 85 95 10 105 15 25 35 45 55 65 75 85 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC www.onsemi.com 4 95 105 NGTB60N65FL2WG TYPICAL CHARACTERISTICS 10,000 14 SWITCHING LOSS (mJ) 10 8 SWITCHING TIME (ns) VCE = 400 V VGE = 15 V TJ = 150°C IC = 60 A 12 Eon 6 4 Eoff VCE = 400 V VGE = 15 V TJ = 150°C IC = 60 A 1000 td(off) td(on) tr tf 100 2 0 5 15 25 35 45 55 65 75 10 85 15 25 35 45 55 Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W) Figure 14. Switching Time vs. Rg Eon SWITCHING TIME (ns) 3.0 2.5 2.0 Eoff 1.5 1.0 150 200 250 300 350 400 450 500 550 td(on) 100 tf tr 10 600 VGE = 15 V TJ = 150°C IC = 60 A Rg = 10 W 150 200 250 300 350 400 450 500 550 600 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 1000 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 85 td(off) 0.5 100 50 ms dc operation 10 100 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 75 1000 VGE = 15 V TJ = 150°C IC = 60 A Rg = 10 W 3.5 0 65 Figure 13. Switching Loss vs. Rg 4.0 SWITCHING LOSS (mJ) 5 1 10 1 ms 100 100 10 1 1000 VGE = 15 V, TC = 150°C 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area www.onsemi.com 5 NGTB60N65FL2WG TYPICAL CHARACTERISTICS Qrr, REVERSE RECOVERY CHARGE (mC) trr, REVERSE RECOVERY TIME (ns) 175 150 TJ = 175°C, IF = 60 A 125 75 TJ = 25°C, IF = 60 A 50 25 0 100 300 500 700 900 1100 TJ = 175°C, IF = 60 A 2.0 1.5 1.0 TJ = 25°C, IF = 60 A 0.5 0 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/m) diF/dt, DIODE CURRENT SLOPE (A/m) Figure 20. Qrr vs. diF/dt (VR = 400 V) 40 1100 2.50 35 TJ = 175°C, IF = 60 A 30 25 20 TJ = 25°C, IF = 60 A 15 10 5 0 2.5 Figure 19. trr vs. diF/dt (VR = 400 V) VF, FORWARD VOLTAGE (V) Irm, REVERSE RECOVERY CURRENT (A) 100 3.0 100 300 500 700 900 IF = 60 A 2.25 2.00 IF = 50 A 1.75 IF = 25 A 1.50 1.25 1.00 −75 −50 −25 1100 0 25 50 75 100 125 150 175 200 diF/dt, DIODE CURRENT SLOPE (A/m) TJ, JUNCTION TEMPERATURE (°C) Figure 21. Irm vs. diF/dt (VR = 400 V) Figure 22. VF vs. TJ www.onsemi.com 6 NGTB60N65FL2WG TYPICAL CHARACTERISTICS SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.282 50% Duty Cycle 0.1 20% 10% 5% 0.01 2% R1 Junction C1 0.001 0.0001 R2 Case Ri (°C/W) Ci (J/°C) 0.0270 0.0243 0.0225 0.0554 0.1121 0.0409 0.0037 0.0130 0.0445 0.0571 0.0892 0.7725 Cn C2 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.000001 Rn 0.00001 0.001 0.0001 0.01 0.1 1 ON−PULSE WIDTH (s) Figure 23. IGBT Transient Thermal Impedance SQUARE−WAVE PEAK R(t) (°C/W) 1 50% Duty Cycle RqJC = 0.622 20% 0.1 10% 5% Junction R1 R2 Rn C1 C2 Cn Case 2% 0.01 Single Pulse Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.001 0.000001 0.00001 0.0001 0.001 0.01 ON−PULSE WIDTH (s) Figure 24. Diode Transient Thermal Impedance www.onsemi.com 7 0.1 Ri (°C/W) Ci (J/°C) 0.006394 0.007900 0.008527 0.025491 0.022800 0.121738 0.363338 0.000156 0.001266 0.003708 0.003923 0.013870 0.008214 0.275226 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AM ISSUE C DATE 07 SEP 2021 GENERIC MARKING DIAGRAMS* XXXXXXXXX AYWWG XXXXXXXXX XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON77284F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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