NGTB45N60S2WG

NGTB45N60S2WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com 45 A, 600 V VCEsat = 2.0 V Eoff = 0.36 mJ Features • • • • Low Switching Loss Reduces System Power Dissipation TJmax = 175°C Soft, Fast Free Wheeling Diode This is a Pb−Free Device C Typical Applications • Welding G ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax IFM 180 A Gate−emitter voltage Transient Gate Emitter Voltage (tp = 5 ms, D < 0.010) VGE $20 $30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C E A 90 45 180 A A 90 45 G C TO−247 CASE 340AL E MARKING DIAGRAM W 300 150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 45N60S2 AYWWG A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB45N60S2WG © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 1 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB45N60S2W/D NGTB45N60S2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.50 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.46 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 45 A VGE = 15 V, IC = 45 A, TJ = 175°C VCEsat − − 2.0 2.5 2.3 − V VGE = VCE, IC = 150 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 175°C ICES − − − − 0.2 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 100 nA Cies − 3200 − pF Coes − 130 − Cres − 85 − Qg − 135 − Qge − 27 − Qgc − 67 − TJ = 25°C VCC = 400 V, IC = 45 A Rg = 10 W VGE = 0 V/ 15 V td(off) − 151 − tf − 55 − Eoff − 0.36 − mJ TJ = 150°C VCC = 400 V, IC = 45 A Rg = 10 W VGE = 0 V/ 15 V td(off) − 154 − ns tf − 78 − Eoff − 0.69 − mJ VGE = 0 V, IF = 45 A VGE = 0 V, IF = 45 A, TJ = 175°C VF − − 1.2 1.2 1.4 − V trr − 498 − ns Qrr − 9400 − nc Irrm − 36 − A STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 45 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−off delay time Fall time Turn−off switching loss Turn−off delay time Fall time Turn−off switching loss ns DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current TJ = 25°C IF = 45 A, VR = 200 V diF/dt = 200 A/ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB45N60S2WG TYPICAL CHARACTERISTICS 160 160 TJ = 150°C 13 V 140 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) TJ = 25°C VGE = 15 V to 20 V 120 11 V 100 80 10 V 60 40 9V 20 0 0 1 2 3 4 5 8V 7V 6 VGE = 15 V to 20 V 120 100 80 11 V 60 10 V 40 9V 8V 20 7V 7 0 8 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics IF, FORWARD CURRENT (A) 1000 100 8 120 TJ = 25°C Cies Coes Cres 10 100 TJ = 25°C 80 TJ = 150°C 60 40 20 0 0 20 60 40 100 80 0 0.5 VCE, COLLECTOR−EMITTER VOLTAGE (V) 1.6 18 1.4 SWITCHING LOSS (mJ) 16 14 12 10 8 6 VCE = 480 V VGE = 15 V IC = 40 A 2 2.0 1.5 Figure 4. Diode Forward Characteristics 20 4 1.0 VF, FORWARD VOLTAGE (V) Figure 3. Typical Capacitance VGE, GATE−EMITTER VOLTAGE (V) 13 V 0 10,000 CAPACITANCE (pF) 140 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 1.2 1.0 0.8 0.6 0.4 Eoff 0.2 0 0 0 20 40 60 80 100 120 140 4 160 14 24 34 44 54 64 IC, COLLECTOR CURRENT (A) QG, GATE CHARGE (nC) Figure 5. Typical Gate Charge Figure 6. Switching Loss vs. IC www.onsemi.com 3 74 84 NGTB45N60S2WG TYPICAL CHARACTERISTICS 1000 td(off) 100 tf VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 10 4 14 24 34 44 54 64 100 ms IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) 1000 100 50 ms 1 ms 10 dc operation 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 1 74 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) Figure 7. Switching Time vs. IC Figure 8. Safe Operating Area 1 50% Duty Cycle R(t) (°C/W) 0.1 RqJC = 0.50 20% 10% 5% 0.01 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 2% Junction R1 0.001 Single Pulse 0.0001 0.000001 Rn Case C2 Cn Ci = ti/Ri C1 0.00001 R2 0.0001 0.001 0.01 0.1 Ri (°C/W) ti (sec) 0.064185 0.060802 0.050673 0.170671 0.142159 0.009510 0.00004 0.001558 0.005201 0.019734 0.018529 0.070344 3.325233 26863.47 1 10 PULSE TIME (sec) Figure 9. IGBT Transient Thermal Impedance 10 R(t) (°C/W) RqJC = 1.46 1 50% Duty Cycle 20% 0.1 Junction R1 10% 5% 2% Rn C2 Cn Ci = ti/Ri C1 Single Pulse 0.01 0.000001 R2 0.00001 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.01 0.01 PULSE TIME (sec) Figure 10. Diode Transient Thermal Impedance www.onsemi.com 4 Case Ri (°C/W) ti (sec) 0.026867 0.000237 0.034915 0.039625 0.087617 0.161215 0.336873 0.265205 0.361515 0.148056 0.000037 0.013344 0.000286 0.000798 0.001141 0.001962 0.002968 0.011924 0.027661 0.213586 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE D DATE 17 MAR 2017 SCALE 1:1 E E2/2 D SEATING PLANE Q 2X 2 M B A M NOTE 6 S NOTE 3 1 0.635 P A E2 NOTE 4 4 DIM A A1 b b2 b4 c D E E2 e F L L1 P Q S 3 L1 F NOTE 5 L 2X B A NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. b2 c b4 3X e b 0.25 A1 NOTE 7 M B A M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.07 1.33 1.65 2.35 2.60 3.40 0.45 0.68 20.80 21.34 15.50 16.25 4.32 5.49 5.45 BSC 2.655 --19.80 20.80 3.81 4.32 3.55 3.65 5.40 6.20 6.15 BSC GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON16119F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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