NGTB45N60SWG

DATA SHEET www.onsemi.com IGBT NGTB45N60SWG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. 45 A, 600 V VCEsat = 2.2 V Eoff = 0.55 mJ C G Features • • • • • E Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Low Gate Charge Soft, Fast Free Wheeling Diode These are Pb−Free Devices G Typical Applications C • Inductive Heating • Soft Switching TO−247 CASE 340AM ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter Voltage VCES 600 V Collector Current @ TC = 25°C @ TC = 100°C IC Pulsed Collector Current, Tpulse Limited by TJmax Diode Forward Current @ TC = 25°C @ TC = 100°C ICM IF 180 45N60S AYWWG A A 90 45 IFM 180 A Gate−emitter Voltage VGE ±20 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating Junction Temperature Range TJ −55 to +150 °C Storage Temperature Range Tstg −55 to +150 °C Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C W 250 50 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. October, 2021 − Rev. 2 MARKING DIAGRAM A 90 45 Diode Pulsed Current, Tpulse Limited by TJmax © Semiconductor Components Industries, LLC, 2014 E 1 45N60S A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB45N60SWG Package Shipping TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB45N60SW/D NGTB45N60SWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.87 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.47 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 45 A VGE = 15 V, IC = 45 A, TJ = 150°C VCEsat − − 2.2 2.6 2.4 − V VGE = VCE, IC = 150 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − − − − 0.2 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 100 nA Cies − 3100 − pF Coes − 120 − Cres − 80 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 45 A, VGE = 15 V Gate to collector charge nC Qg 134 Qge 27 Qgc 67 td(on) 70 tr 34 td(off) 144 tf 68 Eoff 0.55 mJ td(on) 70 ns tr 39 td(off) 151 SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 400 V, IC = 45 A Rg = 10 W VGE = 0 V/ 15 V Turn−off switching loss Turn−on delay time Rise time Turn−off delay time Fall time TJ = 150°C VCC = 400 V, IC = 45 A Rg = 10 W VGE = 0 V/ 15 V ns tf 88 Eoff 0.89 VGE = 0 V, IF = 20 A VGE = 0 V, IF = 20 A, TJ = 150°C VF 1.1 1.03 TJ = 25°C IF = 25 A, VR = 200 V diF/dt = 200 A/ms trr 376 ns Qrr 4145 nc Irrm 22 A Turn−off switching loss mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current 1.4 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB45N60SWG TYPICAL CHARACTERISTICS 140 TJ = 25°C VGE = 17 V to 15 V 120 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 140 13 V 100 80 60 11 V 40 10 V 20 0 9V 7 V to 8 V 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 17 V to 13 V 100 80 60 11 V 10 V 40 9V 20 0 8 TJ = 150°C 120 8V 7V 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics TJ = −55°C 140 Figure 2. Output Characteristics 140 VGE = 17 V to 13 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 160 120 100 80 60 11 V 40 10 V 20 0 9V 7 V to 8 V 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) 0 120 100 TJ = 25°C 80 TJ = 150°C 60 40 20 0 8 0 Figure 3. Output Characteristics 16 10000 4.00 Cies IC = 80 A 3.50 CAPACITANCE (pF) VCE, COLLECTOR−EMITTER VOLTAGE (V) 4 8 12 VGE, GATE−EMITTER VOLTAGE (V) Figure 4. Typical Transfer Characteristics 4.50 3.00 IC = 40 A 2.50 2.00 IC = 20 A 1.50 IC = 5 A 1.00 1000 100 Coes Cres 0.50 0 −75 8 −25 25 75 125 175 10 0 10 20 30 40 50 60 70 80 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance www.onsemi.com 3 90 100 NGTB45N60SWG TYPICAL CHARACTERISTICS 20 100 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 120 TJ = 25°C 80 TJ = 150°C 60 40 20 0 0 0.5 1 1.5 2 15 10 5 0 2.5 VCE = 480 V 20 0 VF, FORWARD VOLTAGE (V) SWITCHING TIME (ns) 0.6 0.4 td(off) 100 tf td(on) tr 10 VCE = 400 V VGE = 15 V IC = 45 A Rg = 10 W 0.2 0 0 2.5 20 40 60 80 100 120 140 40 60 80 100 120 140 Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 0.5 16 160 1000 1 4 20 TJ, JUNCTION TEMPERATURE (°C) 1.5 0 0 TJ, JUNCTION TEMPERATURE (°C) VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 2 1 160 SWITCHING TIME (ns) Eoff, TURN−OFF SWITCHING LOSS (mJ) Eoff, TURN−OFF SWITCHING LOSS (mJ) 0.8 140 1000 VCE = 400 V VGE = 15 V IC = 45 A Rg = 10 W 1 120 Figure 8. Typical Gate Charge Figure 7. Diode Forward Characteristics 1.2 40 60 80 100 QG, GATE CHARGE (nC) 28 40 52 64 76 tf 100 td(on) tr 10 1 88 td(off) VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 4 IC, COLLECTOR CURRENT (A) 20 32 44 56 68 IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. Current www.onsemi.com 4 80 NGTB45N60SWG 1.6 1000 VCE = 400 V VGE = 15 V IC = 45 A TJ = 150°C 1.4 1.2 SWITCHING TIME (ns) Eoff, TURN−OFF SWITCHING LOSS (mJ) TYPICAL CHARACTERISTICS 1 0.8 0.6 0.4 td(off) tf 100 td(on) tr 10 VCE = 400 V VGE = 15 V IC = 45 A TJ = 150°C 0.2 0 15 5 25 35 45 55 65 75 1 85 25 35 45 55 65 75 Figure 13. Switching Loss vs. RG Figure 14. Switching Time vs. RG 85 1000 SWITCHING TIME (ns) 1.2 1 0.8 0.6 0.4 VGE = 15 V IC = 45 A RG = 10 W TJ = 150°C 0.2 0 175 225 275 325 375 425 475 td(off) tf 100 td(on) tr 10 1 175 525 575 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE 225 275 325 375 425 475 525 575 VCE, COLLECTOR−EMITTER VOLTAGE (V) 50 ms 10 dc operation 1 IC, COLLECTOR CURRENT (A) 1000 100 100 ms 1 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 VGE = 15 V IC = 45 A RG = 10 W TJ = 150°C Figure 16. Switching Time vs. VCE 1000 IC, COLLECTOR CURRENT (A) 15 RG, GATE RESISTOR (W) 1.4 Eoff, TURN−OFF SWITCHING LOSS (mJ) 5 RG, GATE RESISTOR (W) 1 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) 1000 100 10 1 VGE = 15 V, TC = 125°C 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 18. Reverse Bias Safe Operating Area Figure 17. Safe Operating Area www.onsemi.com 5 NGTB45N60SWG TYPICAL CHARACTERISTICS 1 50% Duty Cycle RqJC = 0.87 20% R(t) (°C/W) 0.1 10% 5% Junction R1 2% 0.01 R2 Rn C2 Cn Ri (°C/W) Case Ci = ti/Ri 1% C1 Single Pulse 0.001 0.000001 0.00001 ti (sec) 0.04077 0.09054 0.16141 0.21558 0.24842 1.0E−4 5.48E−5 0.002 0.03 0.1 0.11759 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 19. IGBT Transient Thermal Impedance 10 RqJC = 1.46 R(t) (°C/W) 1 0.1 50% Duty Cycle 20% 10% 5% Junction R1 2% 0.01 Rn C2 Cn Ci = ti/Ri 1% C1 0.00001 Case Ri (°C/W) 0.18019 0.37276 0.45472 0.33236 0.11759 ti (sec) 1.48E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 R2 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 20. Diode Transient Thermal Impedance www.onsemi.com 6 10 100 1000 NGTB45N60SWG Figure 21. Test Circuit for Switching Characteristics www.onsemi.com 7 NGTB45N60SWG Figure 22. Definition of Turn On Waveform www.onsemi.com 8 NGTB45N60SWG Figure 23. Definition of Turn Off Waveform www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AM ISSUE C DATE 07 SEP 2021 GENERIC MARKING DIAGRAMS* XXXXXXXXX AYWWG XXXXXXXXX XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON77284F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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