NGTB30N60SWG

NGTB30N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. http://onsemi.com 30 A, 600 V VCEsat = 1.9 V Eoff = 0.54 mJ Features • • • • • Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Low Gate Charge Soft, Fast Free Wheeling Diode These are Pb−Free Devices C Typical Applications • Inverter Welding • UPS Systems G E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C A 60 30 ICM 120 A IF G C TO−247 CASE 340L STYLE 4 E A 60 30 Diode pulsed current, Tpulse limited by TJmax IFM 120 A Gate−emitter voltage VGE $20 Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C MARKING DIAGRAM V W 189 76 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 30N60S AYWWG A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB30N60SWG © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 0 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB30N60SW/D NGTB30N60SWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.66 °C/W Thermal resistance junction−to−case, for Diode RqJC 2.73 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 30 A VGE = 15 V, IC = 30 A, TJ = 150°C VCEsat − − 1.9 2.6 2.2 − V VGE = VCE, IC = 150 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − − − − 0.2 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 100 nA Cies − 2040 − pF Coes − 70 − Cres − 50 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total nC Qg 90 Qge 19 Qgc 45 td(on) 57 tr 32 td(off) 109 tf 91 Turn−on switching loss Eon 0.75 mJ Turn−off switching loss Eoff 0.54 mJ td(on) 56 ns tr 34 Gate to emitter charge VCE = 480 V, IC = 30 A, VGE = 15 V Gate to collector charge SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 400 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15 V Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 400 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15 V ns td(off) 113 tf 172 Eon 0.91 mJ Eoff 0.87 mJ VGE = 0 V, IF = 30 A VGE = 0 V, IF = 30 A, TJ = 150°C VF 2.3 2.5 TJ = 25°C IF = 30 A, VR = 400 V diF/dt = 200 A/ms trr 200 ns Qrr 1000 nc Irrm 9 A Turn−off switching loss DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current 2.5 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. http://onsemi.com 2 NGTB30N60SWG TYPICAL CHARACTERISTICS 120 VGE = 15 V to 20 V 110 100 90 80 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 120 13 V TJ = 25°C 70 60 50 11 V 40 30 10 V 9V 20 7V 10 0 0 1 2 3 8V 4 5 7 6 13 V 80 60 11 V 40 10 V 20 9V 8V 8 7V 0 1 2 3 4 5 7 6 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 8 120 100 TJ = −55°C 13 V IC, COLLECTOR CURRENT (A) VGE = 15 V to 20 V 80 11 V 60 40 10 V 20 9V 8V 0 0 1 2 3 4 5 100 TJ = 25°C 80 TJ = 150°C 60 40 20 0 6 7 0 8 2 4 8 6 12 10 14 16 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 18 10,000 4.5 IC = 60 A 4.0 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) VGE = 15 V to 20 V 100 0 120 VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = 150°C 3.5 3.0 IC = 30 A 2.5 2.0 IC = 15 A 1.5 IC = 5 A Cies 1000 TJ = 25°C Coes 100 Cres 1.0 0.5 −75 −50 −25 0 25 50 10 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance http://onsemi.com 3 NGTB30N60SWG TYPICAL CHARACTERISTICS 20 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 120 100 TJ = 25°C 80 TJ = 150°C 60 40 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 14 12 10 8 VCE = 400 V VGE = 15 V IC = 30 A 6 4 2 0 5.0 20 10 30 40 50 60 70 80 VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC) Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge 1.5 90 100 1000 VCE = 400 V VGE = 15 V IC = 30 A Rg = 10 W SWITCHING TIME (ns) SWITCHING LOSS (mJ) 16 0 0 1.0 Eon Eoff 0.5 0 VCE = 400 V VGE = 15 V IC = 30 A Rg = 10 W tf 100 td(off) td(on) tr 10 0 20 40 60 80 100 120 140 0 160 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 1000 3.0 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 2.0 Eon SWITCHING TIME (ns) 2.5 SWITCHING LOSS (mJ) 18 1.5 Eoff 1.0 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W tf td(off) 100 td(on) 0.5 tr 0 0 10 20 30 40 50 60 10 70 0 10 20 30 40 50 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC http://onsemi.com 4 60 160 NGTB30N60SWG TYPICAL CHARACTERISTICS 1000 td(off) VCE = 400 V VGE = 15 V TJ = 150°C IC = 30 A 2.5 2.0 EON SWITCHING TIME (ns) SWITCHING LOSS (mJ) 3.0 1.5 EOFF 1.0 tf td(on) 100 tr VCE = 400 V VGE = 15 V TJ = 150°C IC = 30 A 0.5 0 10 5 15 25 35 45 55 65 5 75 25 35 45 55 65 Rg, GATE RESISTOR (W) Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg 1.8 75 85 525 575 1000 VGE = 15 V TJ = 150°C IC = 30 A Rg = 10 W 1.4 1.2 VGE = 15 V TJ = 150°C IC = 30 A Rg = 10 W EOFF 1.0 SWITCHING TIME (ns) 1.6 SWITCHING LOSS (mJ) 15 Rg, GATE RESISTOR (W) EON 0.8 0.6 0.4 tf td(off) 100 td(on) tr 0.2 0 10 175 225 275 325 375 425 475 525 575 175 225 325 375 425 475 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 1000 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 275 100 10 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 1 10 50 ms 100 ms 1 ms dc operation 100 100 10 VGE = 15 V, TC = 125°C 1 1000 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTB30N60SWG TYPICAL CHARACTERISTICS SQUARE−WAVE PEAK R(t) (°C/W) 1 50% Duty Cycle RqJC = 0.66 20% 0.1 10% 5% R1 Junction 2% R2 Rn Case 0.01 C1 0.001 Cn C2 Single Pulse Ri (°C/W) Ci (J/°C) 0.045172 0.175067 0.060092 0.270047 0.002214 0.001806 0.016641 0.011710 0.108471 0.092191 0.002714 11.650732 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.000001 0.00001 0.001 0.0001 0.01 0.1 1 ON−PULSE WIDTH (s) Figure 19. IGBT Die Self−heating Square−wave Duty Cycle Transient Thermal Response SQUARE−WAVE PEAK R(t) (°C/W) 10 RqJC = 2.73 50% Duty Cycle 1 20% 10% 5% 2% Junction R1 R2 Rn C1 C2 Cn 0.1 Single Pulse Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.01 0.000001 0.00001 0.0001 0.001 0.01 Case Ri (°C/W) Ci (J/°C) 0.069970 0.092027 0.101062 0.230940 0.414345 0.937517 0.780222 0.098174 0.000014 0.000109 0.000313 0.000433 0.000763 0.001067 0.004053 0.101860 0.1 ON−PULSE WIDTH (s) Figure 20. Diode Die Self−heating Square−wave Duty Cycle Transient Thermal Response http://onsemi.com 6 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340L ISSUE G DATE 06 OCT 2021 SCALE 1:1 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG STYLE 1: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE (S) ANODE 2 CATHODES (S) STYLE 5: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 6: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DOCUMENT NUMBER: DESCRIPTION: STYLE 3: PIN 1. 2. 3. 4. 98ASB15080C TO−247 BASE COLLECTOR EMITTER COLLECTOR STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2021 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative