NGTB50N65FL2WAG
IGBT - Field Stop II / 4 Lead
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. In addition, this new
device is packaged in a TO−247−4L package that provides significant
reduction in Eon Losses compared to standard TO−247−3L package.
The IGBT is well suited for UPS and solar applications. Incorporated
into the device is a soft and fast co−packaged free wheeling diode with
a low forward voltage.
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50 A, 650 V
VCEsat = 1.8 V
Eon = 0.48 mJ
Features
•
•
•
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Improved Gate Control Lowers Switching Losses
Separate Emitter Drive Pin
TO−247−4L for Minimal Eon Losses
Optimized for High Speed Switching
This is a Pb−Free Device
C
G
E1
Typical Applications
E
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Neutral Point Clamp Topology
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Collector−emitter voltage
VCES
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
IF
Value
Unit
650
V
160
50
TO−247
CASE 340AR
4 LEAD
G
MARKING DIAGRAM
A
160
50
IFM
160
A
Pulsed collector current, Tpulse
limited by TJmax
ICM
160
A
Gate−emitter voltage
VGE
$20
V
50N65FL2
AYWWG
$30
Transient gate−emitter voltage
(TPULSE = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
W
417
208
50N65FL2 = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
September, 2016 − Rev. 1
E
E1
A
Diode Pulsed Current
TPULSE Limited by TJ Max
© Semiconductor Components Industries, LLC, 2016
C
1
Device
Package
Shipping
NGTB50N65FL2WAG
TO−247
(Pb−Free)
30 Units / Rail
Publication Order Number:
NGTB50N65FL2WA/D
NGTB50N65FL2WAG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.36
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
0.62
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
650
−
−
V
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 50 A, TJ = 175°C
VCEsat
−
−
1.80
2.17
2.00
−
V
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
VGE = VCE, IC = 350 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 650 V
VGE = 0 V, VCE = 650 V, TJ = 175°C
ICES
−
−
−
5.5
0.3
−
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
5160
−
pF
Coes
−
244
−
Cres
−
141
−
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 480 V, IC = 50 A, VGE = 15 V
Gate to collector charge
Qg
−
215
−
Qge
−
48
−
Qgc
−
116
−
td(on)
−
23
−
tr
−
35
−
td(off)
−
123
−
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
TJ = 25°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 15 V
tf
−
54
−
Eon
−
0.42
−
Eoff
−
0.55
−
Total switching loss
Ets
−
0.97
−
Turn−on delay time
td(on)
−
22
−
tr
−
38
−
td(off)
−
130
−
tf
−
93
−
Eon
−
0.58
−
Turn−off switching loss
Eoff
−
0.92
−
Total switching loss
Ets
−
1.50
−
VF
−
−
2.10
2.20
2.60
−
Turn−on switching loss
Turn−off switching loss
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 175°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 15 V
ns
mJ
ns
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGE = 0 V, IF = 50 A
VGE = 0 V, IF = 50 A, TJ = 175°C
TJ = 25°C
IF = 50 A, VR = 400 V
diF/dt = 200 A/ms
TJ = 175°C
IF = 50 A, VR = 400 V
diF/dt = 200 A/ms
V
trr
−
94
−
ns
Qrr
−
0.36
−
mC
Irrm
−
6.5
−
A
trr
−
170
−
ns
Qrr
−
1.40
−
mC
Irrm
−
13
−
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB50N65FL2WAG
TYPICAL CHARACTERISTICS
160
160
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
140
13 V
120
100
80
11 V
60
10 V
40
7V
20
9V
8V
160
1
2
3
4
5
6
120
13 V
TJ = 150°C
100
80
11 V
60
10 V
40
7V
9V
8V
20
3
4
5
6
7
Figure 1. Output Characteristics
Figure 2. Output Characteristics
160
13 V
100
TJ = −55°C
80
11 V
60
40
10 V
20
9V
7 V and 8 V
0
1
2
3
4
5
6
7
VGE = 20 V − 17 V
120
TJ = 175°C
13 V
100
80
11 V
60
10 V
40
7V
9V
8V
20
0
0
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Output Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TJ = 25°C
140
120
TJ = 150°C
100
80
60
40
20
0
2
4
6
8
10
12
14
16
8
15 V
140
8
160
0
2
VCE, COLLECTOR−EMITTER VOLTAGE (V)
120
0
1
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE =
20 V − 15 V
140
0
8
7
IC, COLLECTOR CURRENT (A)
0
IC, COLLECTOR CURRENT (A)
15 V
140
0
0
IC, COLLECTOR CURRENT (A)
VGE = 20 V − 17 V
VGE = 20 V − 15 V
TJ = 25°C
18
3.0
2.8
IC = 75 A
2.6
2.4
2.2
IC = 50 A
2.0
1.8
IC = 25 A
1.6
1.4
1.2
1.0
−75 −50 −25
0
25
50
75 100 125 150 175 200
VGE, GATE−EMITTER VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Transfer Characteristics
Figure 6. VCE(sat) vs. TJ
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3
8
NGTB50N65FL2WAG
TYPICAL CHARACTERISTICS
100
Cies
TJ = 25°C
1000
Coes
100
TJ = 25°C
90
IF, FORWARD CURRENT (A)
CAPACITANCE (pF)
10,000
Cres
TJ = 150°C
80
70
60
50
40
30
20
10
10
0
0
10
30
20
40
50
60
70
80
90
100
0
1.5
2.0
2.5
3.0
VF, FORWARD VOLTAGE (V)
Figure 7. Typical Capacitance
Figure 8. Diode Forward Characteristics
3.5
1.0
18
VCE = 400 V
VGE = 15 V
IC = 50 A
Rg = 10 W
0.9
16
SWITCHING LOSS (mJ)
VGE, GATE−EMITTER VOLTAGE (V)
1.0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
20
14
12
10
8
6
VCE = 480 V
VGE = 15 V
IC = 50 A
4
2
0
0.8
Eoff
0.7
0.6
Eon
0.5
0.4
0.3
0
50
100
150
200
0
250
20
40
60
80
100 120 140 160 180 200
QG, GATE CHARGE (nC)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Typical Gate Charge
Figure 10. Switching Loss vs. Temperature
1000
1.8
VCE = 400 V
VGE = 15 V
TJ = 175°C
Rg = 10 W
SWITCHING LOSS (mJ)
1.6
SWITCHING LOSS (mJ)
0.5
td(off)
100
tf
tr
td(on)
10
VCE = 400 V
VGE = 15 V
IC = 50 A
Rg = 10 W
1
0
25
50
1.4
Eoff
1.2
1.0
Eon
0.8
0.6
0.4
0.2
0
75
100
125
150
175
200
10
20
30
40
50
60
70
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Time vs. Temperature
Figure 12. Switching Loss vs. IC
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4
80
90
NGTB50N65FL2WAG
TYPICAL CHARACTERISTICS
8
1000
VCE = 400 V
VGE = 15 V
TJ = 175°C
IC = 50 A
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
7
td(off)
100
tf
tr
td(on)
10
VCE = 400 V
VGE = 15 V
TJ = 175°C
Rg = 10 W
1
10
20
6
5
4
3
2
Eoff
1
0
30
40
50
60
70
80
90
0
30
40
50
60
Figure 13. Switching Time vs. IC
Figure 14. Switching Loss vs. RG
70
1.6
SWITCHING LOSS (mJ)
td(off)
VGE = 15 V
TJ = 175°C
IC = 50 A
Rg = 10 W
tf
100
tr
VCE = 400 V
VGE = 15 V
TJ = 175°C
IC = 50 A
td(on)
10
1.2
Eoff
1.0
0.8
0.6
Eon
0.4
0.2
0
0
10
20
30
40
50
60
150 200
70
250
300
350
400
450
500
550 600
RG, GATE RESISTOR (W)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. RG
Figure 16. Switching Loss vs. VCE
1000
VGE = 15 V
TJ = 175°C
IC = 50 A
Rg = 10 W
IC, COLLECTOR CURRENT (A)
SWITCHING TIME (ns)
20
RG, GATE RESISTOR (W)
1.4
SWITCHING TIME (ns)
10
IC, COLLECTOR CURRENT (A)
1000
1000
Eon
td(off)
100
tf
tr
td(on)
10
100
50 ms
10
100 ms
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
1 ms
dc operation
0.1
150 200
250
300
350
400
450
500
550 600
1
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Switching Time vs. VCE
Figure 18. Safe Operating Area
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5
1000
NGTB50N65FL2WAG
TYPICAL CHARACTERISTICS
160
trr, REVERSE RECOVERY TIME (ns)
IC, COLLECTOR CURRENT (A)
1000
100
10
VGE = 15 V, TC = 175°C
1
VR = 400 V
140
120
100
80
TJ = 25°C, IF = 50 A
60
40
1
10
100
1000
100
300
500
700
900
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 19. Reverse Bias Safe Operating Area
Figure 20. trr vs. diF/dt
Irm, REVERSE RECOVERY CURRENT (A)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
3.0
VR = 400 V
2.5
TJ = 175°C, IF = 50 A
2.0
1.5
1.0
TJ = 25°C, IF = 50 A
0.5
0
100
300
500
700
900
1100
TJ = 175°C, IF = 50 A
VR = 400 V
30
20
TJ = 25°C, IF = 50 A
10
0
100
300
500
700
900
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 21. Qrr vs. diF/dt
Figure 22. Irm vs. diF/dt
3.00
2.75
IF = 75 A
2.50
2.25
IF = 50 A
2.00
1.75
IF = 25 A
1.50
1.25
1.00
−75 −50 −25
0
25
50
75 100 125 150 175 200
TJ, JUNCTION TEMPERATURE (°C)
Figure 23. VF vs. TJ
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6
1100
40
diF/dt, DIODE CURRENT SLOPE (A/ms)
VF, FORWARD VOLTAGE (V)
Qrr, REVERSE RECOVERY CHARGE (mC)
TJ = 175°C, IF = 50 A
1100
NGTB50N65FL2WAG
TYPICAL CHARACTERISTICS
175
Ramp, TC = 110°C
150
125
Ipk (A)
Ramp, TC = 80°C
100
Square, TC = 80°C
75
Square, TC = 110°C
50
25
0
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 24. Collector Current vs. Switching Frequency
R(t), SQUARE−WAVE PEAK (°C/W)
1
RqJC = 0.36
50% Duty Cycle
0.1 20%
10%
5%
0.01 2%
Junction R1
R2
Rn
C1
C2
Cn
0.001
0.000001
0.00001
Ri (°C/W) Ci (J/W)
0.0379
0.0026
0.0351
0.0090
0.0301
0.0332
0.0880
0.0359
0.1360
0.0735
0.0292
1.0836
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.0001
Case
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 25. IGBT Transient Thermal Impedance
R(t), SQUARE−WAVE PEAK (°C/W)
1
RqJC = 0.62
50% Duty Cycle
0.1
20%
10%
5%
2%
Junction R1
R2
Rn
C1
C2
Cn
Case
0.01
Single Pulse
Ri (°C/W) Ci (J/W)
0.000125
0.000951
0.002753
0.003765
0.006647
0.009699
0.051480
0.152673
0.234748
0.654533
0.007994
0.010512
0.011485
0.026558
0.047571
0.103104
0.061427
0.065499
0.134709
0.152781
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.001
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
Figure 26. Diode Transient Thermal Impedance
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7
0.1
1
NGTB50N65FL2WAG
Figure 27. Test Circuit for Switching Characteristics
Figure 28. Definition of Turn On Waveform
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8
NGTB50N65FL2WAG
Figure 29. Definition of Turn Off Waveform
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247 4−LEAD
CASE 340AR
ISSUE A
DATE 07 MAY 2020
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX
A
Y
WW
G
DOCUMENT NUMBER:
DESCRIPTION:
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
98AON97044F
TO−247 4−LEAD
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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