NGTB40N120FL2WAG

NGTB40N120FL2WAG IGBT - Field Stop II / 4 Lead This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com 40 A, 1200 V VCEsat = 2.1 V Eon = 1.7 mJ Features • • • • • • • Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Improved Gate Control Lowers Switching Losses Separate Emitter Drive Pin TO−247−4L for Minimal Eon Losses Optimized for High Speed Switching These are Pb−Free Devices C G E1 E Typical Applications • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Neutral Point Clamp Topology C ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Collector−emitter voltage Rating VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C A ICM 160 A IF A 40N120FL2 AYWWG 160 40 IFM 160 A Gate−emitter voltage Transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10) VGE $20 ±30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD W 536 268 Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. May, 2016 − Rev. 0 MARKING DIAGRAM 160 40 Diode pulsed current, Tpulse limited by TJmax © Semiconductor Components Industries, LLC, 2016 TO−247 CASE 340AR 4 LEAD E E1 G 1 40N120FL2 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device NGTB40N120FL2WAG Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB40N120FL2WA/D NGTB40N120FL2WAG THERMAL CHARACTERISTICS Rating Symbol Value Unit RqJC 0.28 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.50 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W Thermal resistance junction−to−case, for IGBT ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 175°C VCEsat − − 2.1 2.4 2.4 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175°C ICES − − − 4.0 0.4 − mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 7500 − pF Coes − 136 − Cres − 230 − Qg − 313 − Qge − 61 − Qgc − 151 − td(on) − 30 − tr − 33 − td(off) − 145 − tf − 95 − Eon − 1.7 − Turn−off switching loss Eoff − 1.1 − Total switching loss Ets − 2.8 − Turn−on delay time td(on) − 28 − Gate−emitter threshold voltage Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 40 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 15V Rise time Turn−off delay time Fall time TJ = 175°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 15 V tr − 37 − td(off) − 165 − ns mJ ns tf − 195 − Eon − 2.5 − Turn−off switching loss Eoff − 2.5 − Total switching loss Ets − 5.0 − VF − − 2.00 2.30 2.40 − V trr − 240 − ns mc Turn−on switching loss mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current VGE = 0 V, IF = 40 A VGE = 0 V, IF = 40 A, TJ = 175°C TJ = 25°C IF = 40 A, VR = 400 V diF/dt = 200 A/ms TJ = 175°C IF = 40 A, VR = 400 V diF/dt = 200 A/ms Qrr − 2.5 − Irrm − 18 − A trr − 392 − ns Qrr − 5.4 − mc Irrm − 26 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB40N120FL2WAG TYPICAL CHARACTERISTICS 160 160 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) VGE = 20 V − 15 V VGE = 20 V − 13 V TJ = 25°C 140 120 100 11 V 80 60 10 V 40 9V 20 7V 8V 0 1 2 3 4 5 6 TJ = 150°C 100 11 V 80 60 10 V 40 9V 20 8V 7V 0 8 7 1 2 6 7 Figure 2. Output Characteristics IC, COLLECTOR CURRENT (A) 100 11 V 80 60 10 V 40 9V 7 V and 8 V 20 0 1 2 3 4 5 6 7 13 V 140 120 TJ = 175°C 100 11 V 80 10 V 60 40 9V 20 8V 7V 0 0 8 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Output Characteristics VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) 100 80 60 40 20 TJ = 175°C TJ = 25°C 0 2 4 6 8 10 12 14 16 8 VGE = 20 V − 15 V TJ = −55°C 120 0 5 Figure 1. Output Characteristics 160 0 4 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 V − 13 V 140 3 VCE, COLLECTOR−EMITTER VOLTAGE (V) 160 IC, COLLECTOR CURRENT (A) 120 0 0 IC, COLLECTOR CURRENT (A) 13 V 140 18 4.0 3.5 IC = 75 A 3.0 IC = 40 A 2.5 2.0 IC = 20 A 1.5 1.0 −75 −50 −25 0 25 50 75 100 125 150 175 200 VGE, GATE−EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Transfer Characteristics Figure 6. VCE(sat) vs. TJ www.onsemi.com 3 8 NGTB40N120FL2WAG TYPICAL CHARACTERISTICS 100 1M TJ = 25°C IF, FORWARD CURRENT (A) CAPACITANCE (pF) 100K Cies 10K 1K Coes 100 TJ = 25°C 90 Cres TJ = 175°C 80 70 60 50 40 30 20 10 0 10 10 30 20 40 50 60 70 80 90 0 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VF, FORWARD VOLTAGE (V) Figure 7. Typical Capacitance Figure 8. Diode Forward Characteristics 16 2.50 14 2.25 12 10 8 6 VCE = 600 V VGE = 15 V IC = 40 A 4 2 VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 2.00 Eon 1.75 1.50 Eoff 1.25 1.00 0.75 0 0.50 0 50 100 150 200 250 300 350 0 20 40 60 80 100 120 140 160 180 200 QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature 1000 5.0 VCE = 600 V VGE = 15 V TJ = 175°C Rg = 10 W SWITCHING LOSS (mJ) 4.5 SWITCHING TIME (ns) 0.5 VCE, COLLECTOR−EMITTER VOLTAGE (V) SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 0 td(off) 100 tf tr td(on) 10 VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 1 0 20 40 4.0 3.5 Eoff Eon 3.0 2.5 2.0 1.5 1.0 0.5 0 60 80 100 120 140 160 180 200 10 20 30 40 50 60 70 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A) Figure 11. Switching Time vs. Temperature Figure 12. Switching Loss vs. IC www.onsemi.com 4 80 90 NGTB40N120FL2WAG TYPICAL CHARACTERISTICS 14 tf td(off) 100 tr td(on) 10 VCE = 600 V VGE = 15 V TJ = 175°C Rg = 10 W 1 10 20 10 6 4 Eoff 2 0 30 40 50 60 70 80 90 0 10 20 30 40 50 60 IC, COLLECTOR CURRENT (A) RG, GATE RESISTOR (W) Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. RG 70 4.0 SWITCHING LOSS (mJ) tf td(on) 100 VGE = 15 V TJ = 175°C IC = 40 A Rg = 10 W 3.5 td(off) tr VCE = 600 V VGE = 15 V TJ = 175°C IC = 40 A 10 3.0 Eon 2.5 Eoff 2.0 1.5 1.0 0.5 0 10 20 30 40 50 60 350 400 70 500 550 600 650 700 750 800 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. RG Figure 16. Switching Loss vs. VCE 1000 1000 VGE = 15 V TJ = 175°C IC = 40 A Rg = 10 W tf td(off) 100 450 RG, GATE RESISTOR (W) IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) Eon 8 1000 SWITCHING TIME (ns) VCE = 600 V VGE = 15 V TJ = 175°C IC = 40 A 12 SWITCHING LOSS (mJ) SWITCHING TIME (ns) 1000 tr td(on) 10 100 dc operation 50 ms 10 100 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 1 ms 0.1 350 400 450 500 550 600 650 700 750 800 1 10 100 1K VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Switching Time vs. VCE Figure 18. Safe Operating Area www.onsemi.com 5 10K NGTB40N120FL2WAG TYPICAL CHARACTERISTICS 450 trr, REVERSE RECOVERY TIME (ns) IC, COLLECTOR CURRENT (A) 1000 100 10 VGE = 15 V, TC = 175°C 1 350 TJ = 175°C, IF = 40 A 300 250 200 TJ = 25°C, IF = 40 A 150 100 50 0 1 10 100 1K 10K 100 300 500 700 900 1100 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 19. Reverse Bias Safe Operating Area Figure 20. trr vs. diF/dt Irm, REVERSE RECOVERY CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) 6 TJ = 175°C, IF = 40 A 5 4 TJ = 25°C, IF = 40 A 3 2 1 VR = 400 V 0 100 300 500 700 900 1300 1100 VR = 400 V 60 TJ = 175°C, IF = 40 A 50 40 TJ = 25°C, IF = 40 A 30 20 10 0 100 300 500 700 900 1100 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 21. Qrr vs. diF/dt Figure 22. Irm vs. diF/dt 3.5 IF = 75 A 3.0 2.5 IF = 40 A 2.0 IF = 20 A 1.5 1.0 −75 −50 −25 0 25 75 100 125 150 175 200 50 TJ, JUNCTION TEMPERATURE (°C) Figure 23. VF vs. TJ www.onsemi.com 6 1300 70 diF/dt, DIODE CURRENT SLOPE (A/ms) VF, FORWARD VOLTAGE (V) Qrr, REVERSE RECOVERY CHARGE (mC) VR = 400 V 400 1300 NGTB40N120FL2WAG TYPICAL CHARACTERISTICS 180 Ramp, TC = 110°C 160 140 Ipk (A) 120 Square, TC = 80°C Ramp, TC = 80°C 100 80 Square, TC = 110°C 60 40 20 0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) Figure 24. Collector Current vs. Switching Frequency R(t), SQUARE−WAVE PEAK (°C/W) 1 RqJC = 0.28 50% Duty Cycle 0.1 20% 10% 5% 0.01 2% Junction R1 R2 Rn C1 C2 Cn 0.001 0.000001 0.00001 Ri (°C/W) Ci (J/W) 0.0000 0.0000 0.0536 0.0059 0.0340 0.0294 0.0558 0.0567 0.1059 0.0944 0.0262 1.2083 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.0001 Case 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 25. IGBT Transient Thermal Impedance R(t), SQUARE−WAVE PEAK (°C/W) 1 RqJC = 0.50 50% Duty Cycle 0.1 20% 10% 5% 2% Junction R1 R2 Rn C1 C2 Cn Case 0.01 Single Pulse Ri (°C/W) Ci (J/W) 0.000058 0.000427 0.001260 0.001363 0.003395 0.022881 0.052571 0.078312 0.128193 1.422617 0.017265 0.023397 0.025095 0.073345 0.093146 0.043705 0.060153 0.127694 0.246682 0.070293 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.001 0.000001 0.00001 0.0001 0.001 PULSE TIME (sec) 0.01 Figure 26. Diode Transient Thermal Impedance www.onsemi.com 7 0.1 1 NGTB40N120FL2WAG Figure 27. Test Circuit for Switching Characteristics Figure 28. Definition of Turn On Waveform www.onsemi.com 8 NGTB40N120FL2WAG Figure 29. Definition of Turn Off Waveform www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 4−LEAD CASE 340AR ISSUE A DATE 07 MAY 2020 SCALE 1:1 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXXX A Y WW G DOCUMENT NUMBER: DESCRIPTION: = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package 98AON97044F TO−247 4−LEAD *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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