NTLJS3A18PZ
Power MOSFET
−20 V, −8.2 A, Single P−Channel,
2.0x2.0x0.8 mm WDFN Package
Features
• WDFN Package with Exposed Drain Pads for Excellent Thermal
•
•
•
•
Conduction
Low Profile WDFN (2.0x2.0x0.8 mm) for Board Space Saving
Ultra Low RDS(on)
ESD Diode−Protected Gate
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on) MAX
18 mW @ −4.5 V
25 mW @ −2.5 V
−20 V
−8.2 A
50 mW @ −1.8 V
90 mW @ −1.5 V
Applications
• Optimized for Power Management Applications for Portable
•
•
ID MAX
S
Products, such as Smart Phones, Media Tablets, PMP, DSC, GPS, and
Others
Battery Switch
High Side Load Switch
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±8.0
V
ID
−8.2
A
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
t≤5s
TA = 25°C
Steady
State
TA = 85°C
−11.2
PD
Power Dissipation
(Note 2)
Pulsed Drain Current
W
1.8
TA = 25°C
3.4
TA = 25°C
Steady
State
ID
TA = 85°C
TA = 25°C
A
−5.0
PD
0.7
−40
A
−55 to
150
°C
VESD
2000
V
Source Current (Body Diode) (Note 2)
IS
−1.1
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
ESD (HBM, JESD22−A114)
WDFN6
CASE 506AP
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size,
(30 mm2, 2 oz Cu).
1
6
2 ACMG 5
G
3
4
Pin 1
AC = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
W
IDM
MARKING
DIAGRAM
D
−3.6
TJ, TSTG
tp = 10 ms
Operating Junction and Storage Temperature
S
−5.9
t≤5s
Continuous Drain
Current (Note 2)
D
P−CHANNEL MOSFET
ORDERING INFORMATION
Device
Package
Shipping†
NTLJS3A18PZTWG
WDFN6
(Pb−Free)
10000/Tape &
Reel
NTLJS3A18PZTXG
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 1
1
Publication Order Number:
NTLJS3A18PZ/D
NTLJS3A18PZ
THERMAL RESISTANCE RATINGS
Symbol
Max
Junction−to−Ambient – Steady State (Note 1)
Parameter
RqJA
69
Junction−to−Ambient – t ≤ 5 s (Note 1)
RqJA
37
Junction−to−Ambient – Steady State Min Pad (Note 2)
RqJA
186
Unit
°C/W
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
−20
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = −250 mA, Ref to 25°C
Zero Gate Voltage Drain Current
IDSS
VDS = −16 V, VGS = 0 V
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±5.0 V
VGS(TH)
VGS = VDS, ID = −250 mA
V
11.5
TJ = 25°C
mV/°C
−1.0
mA
±5.0
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Drain−to−Source On−Resistance
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
−0.4
−1.0
3.9
V
mV/°C
VGS = −4.5 V, ID = −7.0 A
14.6
18
VGS = −2.5 V, ID = −5.0 A
20
25
VGS = −1.8 V, ID = −3.0 A
25
50
VGS = −1.5 V, ID = −1.0 A
40
90
VDS = −15 V, ID = −3.0 A
40
S
2240
pF
mW
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VGS = 0 V, f = 1.0 MHz,
VDS = −15 V
240
210
Total Gate Charge
QG(TOT)
28
Threshold Gate Charge
QG(TH)
1.0
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
8.8
td(ON)
8.6
tr
15
VGS = −4.5 V, VDS = −15 V,
ID = −4.0 A
nC
2.9
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(OFF)
VGS = −4.5 V, VDD = −15 V,
ID = −4.0 A, RG = 1.0 W
tf
ns
150
88
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
VSD
VGS = 0 V, IS = −1.0 A
TJ = 25°C
−0.63
TJ = 125°C
−0.50
tRR
ta
tb
−1.0
V
26.1
VGS = 0 V, dISD/dt = 100 A/ms,
IS = −1.0 A
QRR
10.2
15.9
12
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
nC
NTLJS3A18PZ
TYPICAL CHARACTERISTICS
−4.5 V
30
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VGS = −2.0 V
25
20
VGS = −1.8 V
15
10
VGS = −1.5 V
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
25
20
15
TJ = 25°C
10
TJ = 125°C
0
4.5
TJ = −55°C
0
0.5
1
1.5
2
2.5
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
0.09
ID = −4.0 A
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.10
TJ = 25°C
0.09
0.08
VGS = −1.5 V
0.07
0.06
VGS = −1.8 V
0.05
0.04
0.03
VGS = −2.5 V
0.02
0.01
0.00
VGS = −4.5 V
0
5
10
15
20
25
30
35
40
−VGS, GATE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.5
100000
1.4 VGS = −4.5 V
ID = −4.0 A
1.3
TJ = 125°C
−IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
30
5
0.10
0.00
1.0
VDS = −5 V
35
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (A)
35
40
−4.0 to −2.5 V
−ID, DRAIN CURRENT (A)
40
1.2
1.1
1.0
0.9
0.8
10000
TJ = 85°C
1000
0.7
0.6
50
25
0
25
50
75
100
125
150
100
2
4
6
8
10
12
14
16
18
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
NTLJS3A18PZ
VGS = 0 V
TJ = 25°C
f = 1 MHz
C, CAPACITANCE (pF)
3200
Ciss
2800
2400
2000
1600
1200
800
Coss
400
0
Crss
0
2
4
6
8
10
12
14
16
18
20
5
18
QT
14
VDS
10
2 QGS
4
0
5
10
15
20
2
0
30
25
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
1000
100
−IS, SOURCE CURRENT (A)
td(off)
t, TIME (ns)
6
VDS = −15 V
ID = −4.0 A
TJ = 25°C
Figure 7. Capacitance Variation
tf
tr
10
td(on)
VGS = −4.5 V
VDD = −15 V
ID = −4.0 A
1
10
100
TJ = 125°C
TJ = 25°C
1.0
TJ = −55°C
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
RG, GATE RESISTANCE (W)
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1.2
700
ID = −250 mA
0.90
600
0.80
500
POWER (W)
0.70
0.60
0.50
0.40
400
300
200
0.30
100
0.20
0.10
−50
10
0.1
0.3
1.00
−VGS(th) (V)
8
QGD
1
0
12
VGS
3
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1.0
16
4
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
4000
3600
−VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
−25
0
25
50
75
100
125
150
0
1.E−05
TJ, JUNCTION TEMPERATURE (°C)
1.E−03
1.E−01
1.E+01
1.E+03
SINGLE PULSE TIME (s)
Figure 11. Threshold Voltage
Figure 12. Single Pulse Maximum Power
Dissipation
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4
NTLJS3A18PZ
TYPICAL CHARACTERISTICS
100
−ID, DRAIN CURRENT (A)
10 ms
100 ms
10
1 ms
1
0.1
10 ms
VGS ≤ −8 V
Single Pulse
TC = 25°C
dc
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
1
10
100
R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
80
70
RqJA = 69°C/W
Steady State
60
50
40
Duty Cycle = 0.5
30
20
10
0.05
0.2
0.1
0
1E−06
0.02
0.01
Single Pulse
1E−05
1E−04
1E−03
1E−02
1E−01
t, TIME (s)
Figure 14. FET Thermal Response
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5
1E+00
1E+01
1E+02
1E+03
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2
CASE 506AP−01
ISSUE B
DATE 26 APR 2006
SCALE 4:1
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND
IS MEASURED BETWEEN 0.15 AND 0.20mm FROM
TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS
WELL AS THE TERMINALS.
1. CENTER TERMINAL LEAD IS OPTIONAL. TERMINAL
LEAD IS CONNECTED TO TERMINAL LEAD # 4.
2. PINS 1, 2, 5 AND 6 ARE TIED TO THE FLAG.
A
B
ÍÍÍ
ÍÍÍ
ÍÍÍ
E
PIN ONE
REFERENCE
DIM
A
A1
A3
b
b1
D
D2
E
E2
e
K
L
L2
J
J1
0.10 C
2X
2X
0.10 C
A3
0.10 C
A
7X
0.08 C
A1
C
D2
6X
L
GENERIC
MARKING DIAGRAM*
SEATING
PLANE
4X
1
1
6
2 XX M 5
3
4
e
L2
3
b1
XX = Specific Device Code
M = Date Code
6X
0.10 C A
E2
B
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.05 C
NOTE 5
K
6
4
b
J
J1
SOLDERMASK DEFINED
MOUNTING FOOTPRINT
6X
0.10 C A
0.05 C
B
NOTE 3
2.30
BOTTOM VIEW
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
MILLIMETERS
MIN
MAX
0.70
0.80
0.00
0.05
0.20 REF
0.25
0.35
0.51
0.61
2.00 BSC
1.00
1.20
2.00 BSC
1.10
1.30
0.65 BSC
0.15 REF
0.20
0.30
0.20
0.30
0.27 REF
0.65 REF
STYLE 2:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
1.10
6X
6X
0.35
0.43
1
0.60
1.25
0.35
0.34
0.65
PITCH
DOCUMENT NUMBER:
DESCRIPTION:
98AON20860D
6 PIN WDFN 2X2, 0.65P
0.66
DIMENSIONS: MILLIMETERS
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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