NTMFS0D55N03CGT1G

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.58 mW, 462 A NTMFS0D55N03CG Features • • • • Wide SOA to Improve Inrush Current Management Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 30 V 0.58 mW @ 10 V 462 A Applications • Hot Swap Application • Power Load Switch • Battery Management and Protection D (5−8) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 462 A Continuous Drain Current RqJC (Note 3) Power Dissipation RqJC (Note 3) Continuous Drain Current RqJA (Notes 1, 3) Power Dissipation RqJA (Notes 1, 3) Continuous Drain Current RqJA (Notes 2, 3) Power Dissipation RqJA (Notes 2, 3) TC = 25°C Steady State TC =100°C S (1,2,3) N−CHANNEL MOSFET 326 TC = 25°C PD 199 W TA = 25°C ID 65 A MARKING DIAGRAMS D Steady State Steady State TA = 100°C TA = 25°C PD 3.9 TA = 25°C ID 35 TA = 100°C W A 25 PD 1.1 W TA = 25°C, tp = 10 ms IDM 900 A IS 166 A Single Pulse Drain−to−Source Avalanche Energy (IL = 45.5 Apk) EAS 1346 mJ Operating Junction and Storage Temperature Range TJ, TSTG −55 to +175 °C TL 260 °C Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) DFN5 (SO−8FL) CASE 506EZ 46 TA = 25°C Pulsed Drain Current G (4) 1 S S S G D 0D55NG AYWZZ D D A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceabililty ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in2 pad, 2 oz Cu pad. 2. Surface−mounted on FR4 board using minimum pad, 2 oz Cu pad. 3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. © Semiconductor Components Industries, LLC, 2020 June, 2021 − Rev. 5 1 Publication Order Number: NTMFS0D55N03CG/D NTMFS0D55N03CG THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case – Steady State (Note 1) Parameter RqJC 0.75 Junction−to−Ambient – Steady State (Note 1) RqJA 38 Junction−to−Ambient – Steady State (Note 2) RqJA 133 Unit °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA. ref to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = 30 V V 12 mV/°C TJ = 25°C 1.0 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 330 mA VGS(TH)/TJ ID = 330 mA. ref to 25°C −5 RDS(on) VGS = 10 V, ID = 30 A 0.5 Forward Transconductance gFS VDS = 3 V, ID = 30 A 108 Gate Resistance RG TA = 25°C 0.4 3.0 10150 14500 18500 mA 100 nA 2.2 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance 1.3 mV/°C 0.58 mW S W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS 4501 6430 8359 Reverse Transfer Capacitance CRSS 48 120 222 Total Gate Charge QG(TOT) 121.1 173 224.9 Threshold Gate Charge QG(TH) 15.4 22 28.6 Gate−to−Source Charge QGS 27.3 39 50.7 Gate−to−Drain Charge QGD 4.4 11 20.5 VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 10 V, VDS = 15 V; ID = 30 A pF nC SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 30 VGS = 10 V, VDS = 15 V, ID = 30 A, RG = 3.0 W tf 13 ns 98 20 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 30 A TJ = 25°C 0.75 TJ = 125°C 0.62 VGS = 0 V, dIS/dt = 100 A/ms, VDS = 15 V, IS = 30 A 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 1.2 V 104 ns 177 nC NTMFS0D55N03CG TYPICAL CHARACTERISTICS 450 350 4.5 V 300 ID, DRAIN CURRENT (A) 5.0 V 4.0 V 250 200 3.5 V 150 100 3.0 V 300 250 200 150 100 50 0 0 1.0 0.5 1.5 2.0 2.5 3.0 1 TJ = −55°C 4 3 2 5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.60 TJ = 25°C ID = 30 A TJ = 25°C RDS(on), DRAIN−SOURCE ON−RESISTANCE (mW) 5 4 3 2 1 3 2 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 6 0 TJ = 25°C 350 50 0 VDS = 3 V 400 5 4 7 6 8 9 0.55 VGS = 10 V 0.50 0.45 0.40 10 5 25 45 65 85 105 125 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current 2.0 ID = 30 A VGS = 10 V 1.6 1.2 0.8 0.4 0 −50 −25 0 25 50 75 100 125 150 175 IDSS, REVERSE LEAKAGE CURRENT (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 400 RDS(on), NORMALIZED DRAIN−SOURCE ON−RESISTANCE 450 VGS = 10 V to 5.5 V 100K TJ = 175°C TJ = 150°C 10K TJ = 125°C 1K TJ = 85°C 100 TJ = 25°C 10 1 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 145 30 NTMFS0D55N03CG 100K CISS C, CAPACITANCE (pF) 10K COSS 1K 100 10 VGS = 0 V f = 1 MHz TJ = 25°C CRSS 5 0 10 15 30 25 20 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS IS, SOURCE CURRENT (A) t, TIME (ns) tf tr 1 10 0 30 0 90 60 120 180 150 VGS = 0 V 10 1 TJ = 125°C 0.1 100 TJ = −55°C TJ = 25°C 0.4 0.3 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 TC = 25°C Single Pulse VGS ≤ 10 V TJ(initial) = 25°C 10 ms IPEAK, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 15 V ID = 30 A TJ = 25°C 2 Figure 8. Gate−to−Source Voltage vs. Total Charge td(off) 10 QGD Figure 7. Capacitance Variation td(on) 100 ms 500 ms 1 ms 10 1 QGS 4 100 100 100 6 QG, TOTAL GATE CHARGE (nC) VGS = 10 V VDS = 15 V ID = 30 A 1000 8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 10 10 ms Curve is based on 10% de−rating from typical failure points 0.1 0.01 100 ms 1s RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 TJ(initial) = 100°C 10 1 100 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NTMFS0D55N03CG TYPICAL CHARACTERISTICS 1 50% Duty Cycle ZqJC (°C/W) 20% 0.1 10% 5% 2% 0.01 1% Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 13. Junction−to−Case Transient Thermal Response DEVICE ORDERING INFORMATION Device NTMFS0D55N03CGT1G Marking Package Shipping† 0D55NG DFN5 (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 506EZ ISSUE A DATE 25 AUG 2021 1 SCALE 2:1 q q GENERIC MARKING DIAGRAM* 1 XXXXXX AYWZZ XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON24855H DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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