NTMFS0D9N03CGT1G

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel, SO8-FL V(BR)DSS RDS(ON) MAX ID MAX 30 V 0.9 mW @ 10 V 298 A 30 V, 0.9 mW, 298 A D (5−8) NTMFS0D9N03CG G (4) Features • Advanced Package (5x6 mm) with Excellent Thermal Conduction • Ultra Low RDS(on) to Improve System Efficiency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS S (1,2,3) N−CHANNEL MOSFET Compliant Applications • Hot Swap Application • Power Load Switch • Battery Management and Protection 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 298 A Continuous Drain Current RqJC (Note 2) Steady State Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) Steady State Power Dissipation RqJA (Notes 1, 2) TC = 25°C TC =100°C TC = 25°C PD 144 W TA = 25°C ID 48 A TA = 100°C 34 PD 3.8 W TA = 25°C, tp = 10 ms IDM 900 A IS 120 A Single Pulse Drain−to−Source Avalanche Energy (IL = 29.2 Apk) EAS 556 mJ Operating Junction and Storage Temperature TJ, TSTG −55 to +175 °C TL 260 °C Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) D S S S G 211 TA = 25°C Pulsed Drain Current MARKING DIAGRAM D 0D9NG AYWZZ D D A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceabililty ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in2 pad, 2 oz Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. © Semiconductor Components Industries, LLC, 2019 November, 2021 − Rev. 5 1 Publication Order Number: NTMFS0D9N03CG/D NTMFS0D9N03CG THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case – Steady State Parameter RqJC 1.0 Junction−to−Ambient – Steady State (Note 3) RqJA 39 Unit °C/W 3. Surface−mounted on FR4 board using 1 in2 pad, 2 oz Cu pad. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA. ref to 25°C Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 30 V Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 200 mA VGS(TH)/TJ ID = 200 mA. ref to 25°C V 13 mV/°C TJ = 25°C 1.0 TJ = 125°C 100 mA 100 nA 2.2 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance RDS(on) VGS = 10 V 1.3 −5 ID = 20 A 0.71 mV/°C 0.9 mW Forward Transconductance gFS VDS = 3 V, ID = 20 A 70 S Gate Resistance RG TA = 25°C 1.5 W Input Capacitance CISS VGS = 0 V, VDS = 15 V, f = 1 MHz Output Capacitance Reverse Transfer Capacitance CHARGES AND CAPACITANCES 6615 9450 12285 COSS 3014 4306 5598 CRSS 146 243 486 VGS = 10 V, VDS = 15 V; ID = 20 A Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) 14.2 Gate−to−Source Charge QGS 24.2 Gate−to−Drain Charge QGD 13.5 pF nC 131.4 SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr VGS = 10 V, VDS = 15 V, ID = 20 A, RG = 3.0 W ns 20 16 td(OFF) 93 tf 24 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 10 A TJ = 25°C 0.75 TJ = 125°C 0.60 VGS = 0 V, dIS/dt = 100 A/ms, VDS = 15 V, IS = 20 A 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 1.2 V 83 ns 114 nC NTMFS0D9N03CG TYPICAL CHARACTERISTICS 400 400 VGS = 10 V to 6 V 5.5 V 250 4.5 V 200 4.0 V 150 3.5 V 100 3.0 V 50 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 5.0 V 300 0.5 1.0 1.5 2.0 2.5 3.0 TJ = 25°C 200 150 100 1.0 0.5 4.5 4.0 3 4 5 6 7 8 9 10 VGS, GATE VOLTAGE (V) 5.0 3.0 TJ = 25°C 2.5 2.0 1.5 1.0 VGS = 10 V 0.5 0 10 60 110 210 160 260 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.E−03 VGS = 10 V ID = 20 A TJ = 175°C 1.E−04 1.4 TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 3.5 Figure 2. Transfer Characteristics 1.5 1.2 1.0 1.E−05 TJ = 125°C 1.E−06 TJ = 85°C 1.E−07 0.8 TJ = 25°C 1.E−08 0.6 0.4 −50 TJ = −55°C 3.0 2.5 Figure 1. On−Region Characteristics 2.0 1.6 2.0 1.5 VGS, GATE−TO−SOURCE VOLTAGE (V) 2.5 1.8 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 20 A 2 250 0 1.0 3.0 0 300 50 2.5 V 0 VDS = 3 V 350 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 350 −25 0 25 50 75 100 125 150 175 1.E−09 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTMFS0D9N03CG TYPICAL CHARACTERISTICS CISS 10,000 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) 10,000 COSS 1000 CRSS 100 0 1000 5 10 15 25 30 8 7 6 5 4 QGS QGD 3 VDS = 15 V ID = 20 A TJ = 25°C 2 1 0 0 20 60 40 80 100 140 120 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 VGS = 10 V VDS = 15 V ID = 20 A VGS = 0 V td(off) tf tr td(on) 10 1 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 t, TIME (ns) 20 IS, SOURCE CURRENT (A) 10 VGS = 0 V TJ = 25°C f = 1 MHz 10 1 10 8 6 4 2 0 100 TJ = 125°C 0 0.1 0.2 0.3 0.4 TJ = 25°C 0.5 0.6 TJ = −55°C 0.7 0.8 0.9 1 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 100 100 ms 100 1 ms 10 1 0.1 TJ(initial) = 25°C IPEAK (A) ID, DRAIN CURRENT (A) 10 ms TC = 25°C Single Pulse VGS ≤ 10 V Curve is based on 10% de−rating from typical failure points 10 ms 100 ms RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 TJ(initial) = 100°C 10 1 0.00001 100 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NTMFS0D9N03CG TYPICAL CHARACTERISTICS 10 ZqJC (°C/W) 1 50% Duty Cycle 20% 0.1 10% 5% 2% 0.01 1% Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 13. Thermal Impedance DEVICE ORDERING INFORMATION Device NTMFS0D9N03CGT1G Marking Package Shipping† 0D9NG DFN5 (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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