NTMFS1D7N03CGT1G

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 1.74 mW, 170 A NTMFS1D7N03CG Features • • • • Wide SOA to Improve Inrush Current Management Advanced Package (5x6 mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 30 V 1.74 mW @ 10 V 170 A Typical Applications • Hot Swap Application • Power Load Switch • Battery Management and Protection D (5) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 170 A Continuous Drain Current RqJC (Note 2) Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Note 1) TC = 25°C Steady State Steady State TC = 25°C PD 87 W TA = 25°C ID 35 A TA = 100°C 25 PD 3.8 W TA = 25°C, tp = 10 ms IDM 900 A IS 73 A EAS 128 mJ TJ, Tstg −55 to +175 °C TL 260 °C Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy IL = 50.6 Apk Operating Junction and Storage Temperature Range Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using a 1 in2, 2 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown. They are not constants and are only valid for the particular conditions noted. Actual continuous current will be limited by thermal & electro−mechanical application board design. RqCA is determined by the user’s board design. © Semiconductor Components Industries, LLC, 2020 April, 2021 − Rev. 3 S (1,2,3) N−CHANNEL MOSFET 120 TA = 25°C Power Dissipation RqJA Pulsed Drain Current TC = 100°C G (4) 1 MARKING DIAGRAM 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 1D7NG A Y W ZZ D S S S G D 1D7NG AYWZZ D D = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. Publication Order Number: NTMFS1D7N03CG/D NTMFS1D7N03CG THERMAL RESISTANCE RATINGS Symbol Value Unit Junction−to−Case − Steady State (Note 1) Parameter RqJC 1.73 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min 30 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = 30 V V 16 mV/°C TJ = 25°C 1.0 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 90 mA VGS(TH)/TJ ID = 90 mA, ref to 25°C −5.1 RDS(on) VGS = 10 V, ID = 18 A 1.45 Forward Transconductance gFS VDS = 5 V, ID = 18 A 46 Gate Resistance RG TA = 25°C 0.8 mA 100 nA 2.2 V ON CHARACTERISTICS Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance 1.3 mV/°C 1.74 mW W CHARGES & CAPACITANCES Input Capacitance CISS 3780 Output Capacitance COSS Reverse Capacitance CRSS 50 Total Gate Charge QG(TOT) 48 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 3 td(ON) 16 VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 10 V, VDS = 15 V; ID = 18 A 1770 pF 7 nC 12 SWITCHING CHARACTERISTICS, VGS = 10 V Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 18 A, RG = 3 W tf 6 ns 39 6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 10 A TJ = 25°C 0.78 TJ = 125°C 0.63 VGS = 0 V, VR = 15 V, IS = 18 A, dI/dt = 100 A/ms 1.2 V 55 ns 45 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS1D7N03CG TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 150 VGS = 5.5 V to 10 V 135 135 5.0 V 120 ID, DRAIN CURRENT (A) 150 4.5 V 105 90 4.0 V 75 60 3.5 V 45 30 3.0 V 30 0 0.5 1.0 1.5 2.5 2.0 3.0 90 75 60 45 TJ = 25°C 30 TJ = 125°C 0 3 4 Figure 2. Transfer Characteristics 15 10 5 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C 1.8 1.6 VGS = 10 V 1.4 1.2 1.0 0.8 5 20 35 50 65 IDSS, LEAKAGE (nA) VGS = 10 V ID = 18 A 1.5 1.3 1.1 0.9 50 75 100 125 150 110 125 140 155 TJ = 175°C TJ = 150°C 10K TJ = 125°C 1K TJ = 85°C 100 TJ = 25°C 10 0.7 25 95 ID, DRAIN CURRENT (A) 100K 0 80 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.9 0.5 −50 −25 5 2.0 Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE TJ = −55°C 2 Figure 1. On−Region Characteristics 20 1.7 1 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 18 A 3 105 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 25 0 120 15 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 VDS = 3 V 175 1 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTMFS1D7N03CG C, CAPACITANCE (pF) 10K VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS CISS 1K COSS 100 CRSS 10 0 1K 10 5 15 20 30 25 tr t, TIME (ns) tf 10 3 VDS = 15 V TJ = 25°C ID = 18 A 2 1 0 0 10 5 15 20 30 25 40 35 45 50 VGS = 0 V 10 1 0.1 100 TJ = 125°C 0.3 0.4 0.5 TJ = 25°C 0.6 0.7 TJ = −55°C 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 TC = 25°C Single Pulse VGS ≤ 10 V IPEAK, DRAIN CURRENT (A) IDS, DRAIN CURRENT(A) 1 10 ms 100 ms 10 1 ms Curve is based on 10% de−rating from typical failure points 1 0.1 QGD QGS 4 100 td(on) 100 5 Figure 8. Gate−to−Source Voltage vs. Total Charge td(off) 1000 6 Figure 7. Capacitance Variation 100 1 8 7 QG, TOTAL GATE CHARGE (nC) VGS = 10 V VDS = 15 V ID = 18 A 10 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) 1 VGS = 0 V TJ = 25°C f = 1 MHz 10 10 ms 100 ms 1s RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 1 10 TJ(initial) = 25°C 10 TJ(initial) = 100°C 1 0.00001 0.0001 0.001 100 0.01 0.1 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TAV, TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 10 NTMFS1D7N03CG TYPICAL CHARACTERISTICS ZqJC (°C/W) 10 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.000001 Single Pulse 0.00001 0.001 0.0001 0.01 0.1 1 PULSE TIME (sec) Figure 13. Thermal Impedance DEVICE ORDERING INFORMATION Device NTMFS1D7N03CGT1G Marking Package Shipping† 1D7NG DFN5 (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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