NVHL055N60S5F

DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel, SUPERFET) V, FRFET), TO247-3L VDSS RDS(ON) MAX ID MAX 600 V 55 mW @ 10 V 45 A D 600 V, 55 mW, 45 A NVHL055N60S5F Description G The SUPERFET V MOSFET FRFET series has optimized body diode performance characteristics. This can allow for the removal of components in the application and improve application performance and reliability, particularly when soft switching topologies are used. S POWER MOSFET Features • 650 V @ TJ = 150°C / Typ. RDS(on) = 44 mW • 100% Avalanche Tested • Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Electric Vehicle On Board Chargers • EV Main Battery DC/DC Converters G Parameter Gate−to−Source Voltage DC Symbol Value Unit VDSS 600 V VGS ±30 V AC (f > 1 Hz) Continuous Drain Current TC = 25°C ID A 45 28 PD 278 W IDM 159 A ISM 159 TJ, Tstg −55 to +150 °C IS 45 A EAS 417 mJ Avalanche Current IAS 7 A Repetitive Avalanche Energy (Note 1) EAR 2.78 mJ MOSFET dv/dt dvdt 120 V/ns Pulsed Drain Current Pulsed Source Current (Body Diode) TC = 25°C TC = 25°C, tP = 10 ms Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Avalanche Energy (IL = 7 A, RG = 25 W) Peak Diode Recovery dv/dt (Note 2) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) MARKING DIAGRAM ±30 TC = 100°C Power Dissipation S TO−247 Long Leads CASE 340CX MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Drain−to−Source Voltage D V055N60S5F A YWW ZZ 260 = Specific Device Code = Assembly Location = Data Code (Year & Week) = Assembly Lot ORDERING INFORMATION Device NVHL055N60S5F 70 TL V055N 60S5F AYWWZZ Package Shipping TO−247 30 Units / Tube °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. ISD ≤ 22.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. © Semiconductor Components Industries, LLC, 2021 May, 2022 − Rev. 1 1 Publication Order Number: NVHL055N60S5F/D NVHL055N60S5F THERMAL RESISTANCE Parameter Symbol Value Unit Thermal Resistance, Junction−to−Case, Max. RqJC 0.45 °C/W Thermal Resistance, Junction−to−Ambient, Max. RqJA 40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Conditions Min Typ Max Unit Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA, TJ = 25_C 600 − − V Drain−to−Source Breakdown Voltage Temperature Coefficient DV(BR)DSS/ DTJ ID = 10 mA, Referenced to 25_C − 581 − mV/_C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 600 V, TJ = 25_C − − 10 mA Gate−to−Source Leakage Current IGSS VGS = ±30 V, VDS = 0 V − − ±100 nA Parameter OFF CHARACTERISTICS ON CHARACTERISTICS Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 22.5 A, TJ = 25_C − 44 55 mW Gate Threshold Voltage VGS(th) VGS = VDS, ID = 5.2 mA, TJ = 25_C 3.2 − 4.8 V gFS VDS = 20 V, ID = 22.5 A − 44.8 − S VDS = 400 V, VGS = 0 V, f = 250 kHz − 4603 − pF − 72.9 − Forward Trans−conductance CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Time Related Output Capacitance COSS(tr.) ID = Constant, VDS = 0 V to 400 V, VGS = 0 V − 1114 − Energy Related Output Capacitance COSS(er.) VDS = 0 V to 400 V, VGS = 0 V − 125 − QG(tot) VDD = 400 V, ID = 22.5 A, VGS = 10 V − 85.2 − Total Gate Charge Gate−to−Source Charge QGS − 26.2 − Gate−to−Drain Charge QGD − 24.9 − Gate Resistance nC RG f = 1 MHz − 4.32 − W td(on) VGS = 0/10 V, VDD = 400 V, ID = 22.5 A, RG = 4.7 W − 44 − ns − 26.2 − td(off) − 108 − tf − 2.6 − SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr SOURCE-TO−DRAIN DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, ISD = 22.5 A, TJ = 25_C − − 1.2 V Reverse Recovery Time tRR − 128 − ns Reverse Recovery Charge QRR VGS = 0 V, ISD = 22.5 A, dI/dt = 100 A/ms, VDD = 400 V − 758 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NVHL055N60S5F TYPICAL CHARACTERISTICS 60 40 VGS=4.5V VGS=5V VGS=5.5V VGS=6V VGS=7V VGS=10V 20 0 5 0.12 10 15 10 1 20 1000 0.04 0.02 VGS=10V VGS=20V 10 20 30 40 50 60 70 80 VGS=0V 10 1 TJ=150°C TJ=25°C TJ=−55°C 0 0.2 0.4 0.6 0.8 1 1.2 VSD, DIODE FORWARD VOLTAGE (V) Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Diode Forward Voltage vs. Source Current 102 101 CISS COSS CRSS 0 7 ID, DRAIN CURRENT (A) 103 10−1 6 100 0.1 90 VGS=0V TJ=25°C f=250KHz 100 5 Figure 2. Transfer Characteristics 0.06 104 4 Figure 1. On−Region Characteristics 0.08 105 3 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ=25°C 0 TJ=−55°C TJ=25°C TJ=150°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.10 0 VDS=20V 100 IS, SOURCE CURRENT (A) RDS(on), DRAIN−TO−SOURCE ON−RESISTANCE (W) ID, DRAIN CURRENT (A) 80 0 CAPACITANCE (pF) 1000 TJ=25°C VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) 100 100 200 300 400 500 600 10 ID=22.5A 8 6 4 2 0 VDD=120V VDD=360V VDD=400V 0 10 20 30 40 50 60 70 80 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 3 90 NVHL055N60S5F 1.2 1.15 3 VGS=0V ID=10mA RDS(on), DRAIN−TO−SOURCE ON−RESISTANCE (Normalized) BVDSS, DRAIN−TO−SOURCE BREAKDOWN VOLTAGE (Normalized) TYPICAL CHARACTERISTICS 1.1 1.05 1 0.95 0.9 0.85 0.8 −75 −50 −25 0 25 50 75 100 125 150 ID=22.5A VGS=10V 2.5 2 1.5 1 0.5 0 −75 175 −50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On−Resistance Variation vs. Temperature 175 45 1000 100 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 40 10 ms 100 ms 10 1 ms Operation in this Area is Limited by RDS(on) 1 0.1 18 10 ms TC = 25°C TJ = 150°C Single Pulse DC 10 1 30 25 20 15 10 5 1000 100 35 0 25 EOSS (mJ) 125 Figure 10. Maximum Drain Current vs. Case Temperature 12 10 8 6 4 2 EOSS 0 100 Figure 9. Maximum Safe Operating Area 14 0 75 TC, CASE TEMPERATURE (°C) VGS=0V TJ=25°C f=250KHz 16 50 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 200 300 400 500 600 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. EOSS vs. Drain−to−Source Voltage www.onsemi.com 4 150 NVHL055N60S5F r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS 1 D = 0.5 0.1 0.01 0.001 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse PDM t1 0.00001 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Impedance www.onsemi.com 5 t2 ZqJC(t) = r(t) x RqJC RqJC = 0.45°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 0.1 1 NVHL055N60S5F VGS RL Qg VDD VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 Time NVHL055N60S5F + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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