NVHL110N65S3F

MOSFET – Power, N-Channel, SUPERFET) III, FRFET) 650 V, 30 A, 110 mW NVHL110N65S3F www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. VDSS RDS(on) MAX ID MAX 650 V 110 mΩ @ 10 V 30 A D G Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 93 mW Ultra Low Gate Charge (Typ. Qg = 58 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF) 100% Avalanche Tested AEC−Q101 Qualified and PPAP Capable Applications S N−Channel MOSFET G • Automotive On Board Charger HEV−EV • Automotive DC/DC converter for HEV−EV D S TO−247 LONG LEADS CASE 340CX MARKING DIAGRAM $Y&Z&3&K NVHL 110N65S3F $Y &Z &3 &K NVHL110N65S3F = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 September, 2020 − Rev. 2 1 Publication Order Number: NVHL110N65S3F/D NVHL110N65S3F ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V DC ±30 V AC (f > 1 Hz) ±30 V Continuous (TC = 25°C) 30 A Continuous (TC = 100°C) 19.5 IDM Drain Current 69 A EAS Single Pulsed Avalanche Energy (Note 2) 380 mJ EAR Repetitive Avalanche Energy (Note 1) 2.4 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD Pulsed (Note 1) Power Dissipation (TC = 25°C) Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range 240 W 1.92 W/°C −55 to +150 °C 300 °C Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 3.5 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 15 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case, Max. RqJA Thermal Resistance, Junction to Ambient, Max. Value Unit 0.52 _C/W 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NVHL110N65S3F NVHL110N65S3F TO−247 Tube N/A N/A 30 Units www.onsemi.com 2 NVHL110N65S3F ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 − − V VGS = 0 V, ID = 10 mA, TJ = 150_C 700 − − V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 20 mA, Referenced to 25_C − 0.61 − V/_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 10 mA VDS = 520 V, TC = 125_C − 44 − IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V − − ±100 nA 3.0 − 5.0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.74 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 15 A − 93 110 mW Forward Transconductance VDS = 20 V, ID = 15 A − 17 − S VDS = 400 V, VGS = 0 V, f = 1 MHz − 2560 − pF − 50 − pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 553 − pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 83 − pF Total Gate Charge at 10 V VDS = 400 V, ID = 15 A, VGS = 10 V (Note 4) − 58 − nC − 19 − nC Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance − 23 − nC f = 1 MHz − 2 − W VDD = 400 V, ID = 15 A, VGS = 10 V, Rg = 4.7 W (Note 4) − 29 − ns − 32 − ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time − 61 − ns Turn-Off Fall Time − 16 − ns Maximum Continuous Source to Drain Diode Forward Current − − 30 A ISM Maximum Pulsed Source to Drain Diode Forward Current − − 69 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 15 A − − 1.3 V trr Reverse Recovery Time − 94 − ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 15 A, dIF/dt = 100 A/ms − 343 − nC tf SOURCE-DRAIN DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NVHL110N65S3F TYPICAL CHARACTERISTICS 100 250 ms Pulse Test TC = 25°C 250 ms Pulse Test TC = 150°C VGS = 10 V 8.0 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 7.0 V 6.5 V 10 6.0 V 5.5 V VGS = 10 V 8.0 V 7.0 V 6.5 V 6.0 V 10 5.5 V 1 0.1 1 10 0.5 0.2 20 Figure 1. On−Region Characteristics 255C Figure 2. On−Region Characteristics 1505C ID, DRAIN CURRENT (A) VDS = 20 V 250 ms Pulse Test 10 TJ = 25°C TJ = 150°C 2 3 4 TJ = −55°C 5 6 7 8 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.3 0.2 VGS = 10 V 0.1 0 VGS = 20 V 0 30 40 50 60 10K 10 TJ = 150°C TJ = 25°C 0.1 0.01 Ciss 1K 100 TJ = −55°C 0.5 1.0 1.5 10 0.1 2.0 Coss VGS = 0 V f = 1 MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0 70 100K CAPACITANCE (pF) IS, REVERSE DRAIN CURRENT (A) 20 Figure 4. On−Resistance Variation vs. Drain Current and Gate Voltage VGS = 0 V 0.001 10 ID, DRAIN CURRENT (A) Figure 3. Transfer Characteristics 1 20 10 VDS, DRAIN−SOURCE VOLTAGE (V) 100 1 1 VDS, DRAIN−SOURCE VOLTAGE (V) RDS(on), DRAIN−SOURCE ON−RESISTANCE (W) 1 0.1 1 10 100 VSD, BODY DIODE FORWARD VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 6. Capacitance Characteristics www.onsemi.com 4 1K NVHL110N65S3F TYPICAL CHARACTERISTICS VDS = 130 V ID = 15 A 9 BVDSS, DRAIN−TO−SOURCE BREAKDOWN VOLTAGE (Normalized) VGS, GATE−SOURCE VOLTAGE (V) 10 8 7 VDS = 400 V 6 5 4 3 2 1 0 0 10 20 30 40 50 60 1.1 1.0 0.9 0.8 −75 −25 25 75 125 175 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Gate Charge Characteristics Figure 8. Breakdown Voltage Variation vs. Temperature 100 ID = 15 A VGS = 10 V 2.5 ID, DRAIN CURRENT (A) RDS(on), DRAIN−SOURCE ON−RESISTANCE (Normalized) VGS = 0 V ID = 10 mA QG, TOTAL GATE CHARGE (nC) 3.0 2.0 1.5 1.0 0.5 0 −75 −25 25 75 125 100 ms 10 RDS(on) Limit 1 ms 10 ms 1 TC = 25°C RqJC = 0.52°C/W Single Pulse 0.1 175 1 100 ms/DC 10 100 1000 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−SOURCE VOLTAGE (V) Figure 9. On−Resistance Variation vs. Temperature Figure 10. Maximum Safe Operating Area 40 15.0 12.5 30 10.0 EOSS (mJ) ID, DRAIN CURRENT (A) 1.2 20 7.5 5.0 10 2.5 0 25 50 75 100 125 0 150 0 100 200 300 400 500 600 TC, CASE TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Drain Current vs. Case Temperature Figure 12. EOSS vs. Drain−to−Source Voltage www.onsemi.com 5 NVHL110N65S3F TYPICAL CHARACTERISTICS 1000 IDM, PEAK CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 0.01 0.1 1 t, RECTANGULAR PULSE (s) Figure 13. Normalized Power Dissipation vs. Case Temperature Figure 14. Peak Current Capability 300 TA = 150°C 200 TA = 25°C 100 7 8 9 10 10 1.2 ID = 3 mA 1.1 1.0 0.9 0.8 0.7 0.6 −75 −25 25 75 125 175 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 15. RDS(on) vs. Gate Voltage Figure 16. Normalized Gate Threshold Voltage vs. Temperature 100 IAS, AVALANCHE CURRENT (A) RDS(on), ON−RESISTANCE (mW) 0.0001 0.001 TC, CASE TEMPERATURE (°C) ID = 15 A 6 Current Limited Max 10 0.00001 400 0 100 150 GATE THRESHOLD VOLTAGE (Normalized) POWER DISSIPATION MULTIPLIER 1.2 If R = 0 tAV = (L)(I AS )/(1.3*RATED BV DSS − VDD ) / 0 If R = tAV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS − V DD) +1] Starting TJ = 25°C 10 Starting TJ = 125°C 1 0.0001 0.001 0.01 0.1 1 10 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Application Notes AN7514 and AN7515 Figure 17. Unclamped Inductive Switching Capability www.onsemi.com 6 NVHL110N65S3F r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (Normalized) TYPICAL CHARACTERISTICS 2 1 Duty Cycle − Descending Order Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 t1 Single Pulse 0.001 0.00001 t2 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (sec) Figure 18. Transient Thermal Response www.onsemi.com 7 0.1 Notes: ZqJC (t) = r(t) x RqJC RqJC = 0.52°C/W Peak TJ = PDM x ZqJC (t) + TC Duty Cycle, D = t1/t2 1 10 NVHL110N65S3F VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 19. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 20. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 21. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 8 Time NVHL110N65S3F + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 22. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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