NVHL050N65S3HF

MOSFET – Power, N‐Channel, SUPERFET III, FRFET 650 V, 58 A, 50 mW NVHL050N65S3HF www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. VDSS RDS(ON) MAX ID MAX 650 V 50 mW 58 A D G Features • • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 41 mW Ultra Low Gate Charge (Typ. Qg = 119 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 1051 pF) 100% Avalanche Tested AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant S G D S TO−247 long leads CASE 340CX Applications • Automotive On Board Charger HEV−EV • Automotive DC/DC Converter HEV−EV MARKING DIAGRAM $Y&Z&3&K NVHL050 N65S3HF $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot NVHL050N65S3HF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2019 October, 2020 − Rev. 2 1 Publication Order Number: NVHL050N65S3HF/D NVHL050N65S3HF ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 58 − Continuous (TC = 100°C) 36 − Pulsed (Note 1) A IDM Drain Current 145 A EAS Single Pulsed Avalanche Energy (Note 2) 830 mJ IAS Avalanche Current (Note 2) 7.5 A EAR Repetitive Avalanche Energy (Note 1) 4.03 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD Power Dissipation TJ, TSTG TL (TC = 25°C) 403 W − Derate Above 25°C 3.23 W/°C −55 to +150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 7.5 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 29 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case, Max. RqJA Thermal Resistance, Junction to Ambient, Max. Value Unit 0.31 _C/W 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NVHL050N65S3HF NVHL050N65S3HF TO−247 Tube N/A N/A 30 Units www.onsemi.com 2 NVHL050N65S3HF ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 − − V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 − − V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25_C − 0.64 − V/_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 10 mA VDS = 520 V, TC = 125_C − 22 − IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V − − ±100 nA VGS = VDS, ID = 1.7 mA 3.0 − 5.0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 29 A − 41 50 mW Forward Transconductance VDS = 20 V, ID = 29 A − 27 − S − 4880 − pF − 113 − pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 1051 − pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 200 − pF − 119 − nC − 36 − nC − 45 − nC − 1.8 − W − 32 − ns − 30 − ns − 89 − ns − 25 − ns Maximum Continuous Source to Drain Diode Forward Current − − 58 A ISM Maximum Pulsed Source to Drain Diode Forward Current − − 145 A VSD Source to Drain Diode Forward Voltage − − 1.3 V − 128 − ns − 606 − nC Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance VDS = 400 V, ID = 29 A, VGS = 10 V (Note 4) f = 1 MHz SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf VDD = 400 V, ID = 29 A, VGS = 10 V, Rg = 2.2 W (Note 4) Turn-Off Fall Time SOURCE-DRAIN DIODE CHARACTERISTICS IS trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 29 A VGS = 0 V, ISD = 29 A, dIF/dt = 100 A/ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NVHL050N65S3HF TYPICAL CHARACTERISTICS 200 200 VGS = 10 V 8.0 V 5.5 V 10 200 5.5 V 10 1 0.2 VDS, DRAIN−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. On−Region Characteristics TJ = 150°C 10 TJ = −55°C 3 4 5 6 7 8 VGS, GATE−TO−SOURCE VOLTAGE (V) 80 TC = 25°C 60 VGS = 10 V 40 20 VGS = 20 V 0 40 60 80 100 120 140 160 180 Figure 4. On−Resistance Variation vs. Drain Current and Gate Voltage 100K 1000 250 ms Pulse Test 100 VGS = 0 V 10 TJ = 150°C 1 TJ = 25°C 0.1 1K 100 10 0.01 TJ = −55°C 0 0.2 0.4 0.6 Ciss 10K CAPACITANCE (pF) IS, REVERSE DRAIN CURRENT (A) 20 ID, DRAIN CURRENT (A) Figure 3. Transfer Characteristics 0.001 20 2.0 VDS, DRAIN−SOURCE VOLTAGE (V) TJ = 25°C 1 6.0 V 20 2.0 VGS = 10 V 8.0 V 7.0 V 6.5 V 250 ms Pulse Test TC = 25°C 250 ms Pulse Test VDS = 20 V 100 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 6.0 V 1 0.2 250 ms Pulse Test TC = 150°C 100 7.0 V 6.5 V RDS(ON), DRAIN−SOURCE ON−RESISTANCE (W) ID, DRAIN CURRENT (A) 100 0.8 1.0 1.2 1.4 1.6 1.8 1 0.1 2.0 Coss f = 1 MHz VGS = 0 V Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 10 Crss 100 VSD, BODY DIODE FORWARD VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 6. Capacitance Characteristics www.onsemi.com 4 1000 NVHL050N65S3HF ID = 29 A VDD = 130 V 8 VDD = 400 V 6 4 2 0 0 3.0 48 24 96 72 120 1.1 1.0 0.9 0.8 −75 −50 −25 0 25 50 100 125 150 175 75 Figure 7. Gate Charge Characteristics Figure 8. Breakdown Voltage Variation vs. Temperature 200 100 2.0 1.5 1.0 0.5 0 −75 −50 −25 0 25 50 75 100 125 150 100 ms 10 1 ms 10 ms Operation in this Area is Limited by RDS(ON) 1 DC 0.1 0.01 175 TC = 25°C TJ = 150°C Single Pulse 1 10 100 1K TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−SOURCE VOLTAGE (V) Figure 9. On−Resistance Variation vs. Temperature Figure 10. Maximum Safe Operating Area 70 30 60 24 50 Eoss (mJ) ID, DRAIN CURRENT (A) VGS = 0 V ID = 10 mA TJ, JUNCTION TEMPERATURE (°C) VGS = 10 V ID = 29 A 2.5 1.2 Qg, TOTAL GATE CHARGE (nC) ID, DRAIN CURRENT (A) RDS(ON), DRAIN−SOURCE ON−RESISTANCE (Normalized) VGS, GATE−SOURCE VOLTAGE (V) 10 BVDSS, DRAIN−SOURCE BREAKDOWN VOLTAGE (Normalized) TYPICAL CHARACTERISTICS 40 30 18 12 20 6 10 0 25 50 75 100 125 0 150 0 100 200 300 400 500 600 TC, CASE TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Drain Current vs. Case Temperature Figure 12. EOSS vs. Drain−to−Source Voltage www.onsemi.com 5 NVHL050N65S3HF 250 1.2 NORMALIZED GATE THRESHOLD VOLTAGE RDS(ON), DRAIN−SOURCE ON−RESISTANCE (mW) TYPICAL CHARACTERISTICS 200 150 TA = 150°C 100 50 0 TA = 25°C Pulse Duration = 250 ms Duty Cycle = 0.5% Max ID = 29 A 5 6 7 8 9 VGS = VDS ID = 1.7 mA 1.0 0.8 0.6 −80 10 −40 0 40 80 120 160 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 13. RDS(ON) vs. Gate Voltage Figure 14. Normalized Gate Threshold Voltage vs. Temperature IAS AVALANCHE CURRENT (A) 100 10 TJ(initial) = 25°C TJ(initial) = 100°C 1 1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 tAV, TIME IN AVALANCHE (sec) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 15. Unclamped Inductive Switching Capability 10 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 PDM 0.01 0.01 t1 Single Pulse 0.001 0.00001 0.0001 0.001 t2 0.01 t, RECTANGULAR PULSE DURATION (s) Figure 16. Transient Thermal Response Curve www.onsemi.com 6 ZqJC(t) = r(t) x RqJC RqJC = 0.31°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 0.1 1 NVHL050N65S3HF VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Figure 17. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 18. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 19. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time NVHL050N65S3HF + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 20. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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