NVTFS4C06NTAG

DATA SHEET www.onsemi.com MOSFET – Power, Single, N-Channel, m8FL V(BR)DSS RDS(on) MAX ID MAX 30 V 4.2 mW @ 10 V 71 A 6.1 mW @ 4.5 V 30 V, 4.2 mW, 71 A NVTFS4C06N N−Channel Features • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVTFS4C06NWF − Wettable Flanks Product NVT Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant D (5 − 8) G (4) S (1, 2, 3) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Value Unit VDSS 30 V VGS ±20 V ID 21 A Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Notes 1, 2, 4) Steady State TA = 25°C TA = 100°C Power Dissipation RqJA (Note 1, 2, 4) TA = 25°C Continuous Drain Current RqJC (Note 1, 3, 4) TA = 25°C Power Dissipation RqJC (Note 1, 3, 4) TA = 25°C Pulsed Drain Current 1 Symbol 15 3.1 PD TA = 100°C PD 50 A 37 W IDM 367 A TJ, Tstg −55 to +175 °C IS 33 A EAS 34 mJ TL 260 °C Lead Temperature for Soldering Purposes (1/8″ from Case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State (Drain) (Notes 1 and 4) RqJC 4.1 °C/W Junction−to−Ambient – Steady State (Notes 1 and 2) RqJA 48 April, 2022 − Rev. 2 1 S S S G 4C06 06WF A Y WW G XXXX AYWWG G D D D D = Specific Device Code for NVMTS4C06N = Specific Device Code of NVTFS4C06NWF = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2 2 oz. Cu pad. 3. Assumes heat−sink sufficiently large to maintain constant case temperature independent of device power. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2014 MARKING DIAGRAM 18 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, IL = 26 Apk, L = 0.1 mH) WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL WF) CASE 515AN 71 ID TA = 100°C Operating Junction and Storage Temperature W 1.6 TA = 100°C TA = 25°C, tp = 10 ms WDFN8 3.3x3.3, 0.65P CASE 511AB 1 See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NVTFS4C06N/D NVTFS4C06N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit 30 − − V − 14.4 − mV/°C TJ = 25°C − − 1.0 mA TJ = 125°C − − 10 − ±100 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS VGS = 0 V, ID = 250 mA VGS = 0 V, VDS = 24 V IGSS VDS = 0 V, VGS = ±20 V − VGS(TH) VGS = VDS, ID = 250 mA 1.3 − 2.2 V − 3.8 − mV/°C mW nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) VGS = 10 V ID = 30 A − 3.4 4.2 VGS = 4.5 V ID = 30 A − 4.9 6.1 Forward Transconductance gFS VDS = 1.5 V, ID = 15 A − 58 − S Gate Resistance RG TA = 25°C − 1.0 − W Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 15 V − 1683 − pF Output Capacitance COSS − 841 − CHARGES AND CAPACITANCES Reverse Transfer Capacitance CRSS − 40 − VGS = 0 V, VDS = 15 V, f = 1 MHz − 0.023 − VGS = 4.5 V, VDS = 15 V; ID = 30 A − 11.6 − QG(TH) − 2.6 − QGS − 4.7 − Gate−to−Drain Charge QGD − 4.0 − Gate Plateau Voltage VGP − 3.1 − V VGS = 10 V, VDS = 15 V; ID = 30 A − 26 − nC VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W − 10 − ns − 32 − − 18 − − 5.0 − − 8.0 − − 28 − Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) Threshold Gate Charge Gate−to−Source Charge Total Gate Charge QG(TOT) nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) tf td(ON) tr VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W td(OFF) − 24 − tf − 3.0 − TJ = 25°C − 0.8 1.1 TJ = 125°C − 0.63 − − 34 − − 17 − tb − 17 − QRR − 22 − ns DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR ta VGS = 0 V, IS = 10 A VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A V ns nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVTFS4C06N TYPICAL CHARACTERISTICS 80 3.4 V 3.6 V TJ = 25°C 4.0 V to 10 V 50 3.0 V 40 30 2.8 V 20 2.2 V 10 2.6 V 60 50 40 30 TJ = 125°C 20 TJ = 25°C 10 2.4 V 0.5 1 1.5 2 2.5 3 0 1.5 2 2.5 3 3.5 4 4.5 Figure 2. Transfer Characteristics 0.016 0.014 0.012 0.010 0.008 0.006 0.004 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 0.018 5 0.0060 TJ = 25°C 0.0055 VGS = 4.5 V 0.0050 0.0045 0.0040 VGS = 10 V 0.0035 0.0030 0.0025 0.0020 0.0015 0.0010 10 20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.8 10000 VGS = 0 V ID = 30 A VGS = 10 V TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1 VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 30 A 0.002 3.0 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.020 1.6 TJ = −55°C 0 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VDS = 5 V 70 3.2 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 60 1.4 1.2 1.0 1000 TJ = 125°C 100 TJ = 85°C 0.8 0.6 −50 10 −25 0 25 50 75 100 125 150 175 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NVTFS4C06N TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) 1800 VGS, GATE−TO−SOURCE VOLTAGE (V) 2000 VGS = 0 V TJ = 25°C Ciss 1600 1400 1200 Coss 1000 800 600 400 200 Crss 0 0 5 10 15 20 25 QT 8 6 4 Qgd TJ = 25°C VDD = 15 V VGS = 10 V ID = 30 A Qgs 2 0 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1000 20 VDD = 15 V ID = 15 A VGS = 10 V IS, SOURCE CURRENT (A) td(off) tr td(on) 10 VGS = 0 V 18 100 tf 16 14 12 10 8 6 TJ = 125°C 4 TJ = 25°C 2 1.0 1 10 100 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 10 ms ID, DRAIN CURRENT (A) t, TIME (ns) 10 dc 10 100 ms 1 0.1 1 ms VGS = 10 V TC = 25°C 650 mm2 2 oz Cu Pad 10 ms RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 100 NVTFS4C06N TYPICAL CHARACTERISTICS 100 Duty Cycle = 50% RqJA(t) (°C/W) 10 20% 10% 5% 2% 1% 1 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) 100 130 120 110 100 90 80 70 60 50 40 30 20 10 0 IPEAK, DRAIN CURRENT (A) GFS (S) Figure 12. Thermal Response 0 5 10 15 20 25 30 35 40 45 50 55 TJ(initial) = 25°C TJ(initial) = 125°C 10 1 1.0E−06 60 1.0E−05 1.0E−04 ID (A) TAV, TIME IN AVALANCHE (s) Figure 13. GFS vs. ID Figure 14. Avalanche Characteristics 1.E−03 ORDERING INFORMATION Package Shipping† WDFN8 3.3x3.3, 0.65P (Pb−Free) 1500 / Tape & Reel WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL WF) (Pb−Free) 1500 / Tape & Reel NVTFS4C06NTWG WDFN8 3.3x3.3, 0.65P (Pb−Free) 5000 / Tape & Reel NVTFS4C06NWFTWG WDFN8 3.3x3.3, 0.65P (Pb−Free) 5000 / Tape & Reel Device NVTFS4C06NTAG NVTFS4C06NWFTAG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 1 SCALE 2:1 DATE 23 APR 2012 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A e SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 8X e/2 1 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 0.65 PITCH PACKAGE OUTLINE 4X 0.66 M E3 8 5 D2 BOTTOM VIEW 1 3.60 L1 GENERIC MARKING DIAGRAM* XXXXX A Y WW G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* L G SEATING PLANE DETAIL A K E2 C 6X 0.10 C DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q XXXXX AYWWG G 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON30561E WDFN8 3.3X3.3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL WF) CASE 515AN ISSUE O GENERIC MARKING DIAGRAM* XXXX AYWWG G DOCUMENT NUMBER: DESCRIPTION: DATE 25 AUG 2020 XXXX = Specific Device Code *This information is generic. Please refer to A = Assembly Location device data sheet for actual part marking. Y = Year Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may WW = Work Week not follow the Generic Marking. G = Pb−Free Package (Note: Microdot may be in either location) 98AON24556H Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL WF) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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