MOSFET - Power, Single
N-Channel
80 V, 55 mW, 13 A
NVTFS6H888N
Features
•
•
•
•
•
•
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Small Footprint (3.3 x 3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVTFS6H888NWF − Wettable Flanks Product
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
V(BR)DSS
RDS(on) MAX
ID MAX
80 V
55 mW @ 10 V
13 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
N−Channel
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
80
V
Gate−to−Source Voltage
VGS
±20
V
ID
12
A
Continuous Drain
Current RqJC
(Notes 1, 2, 3, 4)
TC = 25°C
Power Dissipation
RqJC (Notes 1, 2, 3)
Continuous Drain
Current RqJA
(Notes 1, 3, 4)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1, 3)
Pulsed Drain Current
Steady
State
PD
9.2
ID
1
3.3
PD
W
2.9
1.5
IDM
47
A
TJ, Tstg
−55 to
+175
°C
IS
15
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 0.6 A)
EAS
47
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
MARKING DIAGRAM
A
4.7
TA = 100°C
TA = 25°C, tp = 10 ms
S (1, 2, 3)
W
18
TA = 100°C
TA = 25°C
G (4)
8.3
TC = 100°C
TA = 25°C
D (5 − 8)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
WDFN8
(m8FL)
CASE 511AB
1
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
XXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State (Note 3)
RqJC
8.2
°C/W
Junction−to−Ambient − Steady State (Note 3)
RqJA
51.5
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2018
June, 2020 − Rev. 1
1
Publication Order Number:
NVTFS6H888N/D
NVTFS6H888N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
80
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VGS = 0 V,
VDS = 80 V
V
TJ = 25°C
10
TJ = 125°C
250
100
mA
IGSS
VDS = 0 V, VGS = 20 V
nA
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 15 mA
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 5 A
45.7
gFS
VDS = 15 V, ID = 10 A
18.5
S
220
pF
ON CHARACTERISTICS (Note 5)
Forward Transconductance
2.0
4.0
V
55
mW
CHARGES AND CAPACITANCES
Ciss
Input Capacitance
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz,
VDS = 40 V
35
3.0
nC
1.0
VGS = 10 V, VDS = 40 V, ID = 10 A
1.7
0.9
VGS = 10 V, VDS = 40 V, ID = 10 A
4.7
nC
7.0
ns
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 10 V, VDS = 64 V,
ID = 10 A
tf
15
11
11
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
VGS = 0 V,
IS = 5 A
TJ = 25°C
0.85
TJ = 125°C
0.73
tRR
25
Charge Time
ta
18
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, dlS/dt = 100 A/ms,
IS = 10 A
QRR
1.2
V
ns
6.0
17
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVTFS6H888N
TYPICAL CHARACTERISTICS
70
70
VGS = 10 V
60
50
40
30
6V
20
5V
10
0
1
2
3
4
5
7
6
TJ = 25°C
40
30
20
0
8
TJ = 125°C
0
TJ = −55°C
4
5
6
7
8
Figure 2. Transfer Characteristics
60
50
40
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
70
60
50
VGS = 10 V
40
30
1
3
2
5
4
ID, DRAIN CURRENT (A)
100K
TJ = 175°C
IDSS, LEAKAGE (nA)
10K
1.5
1.0
0.5
0
10
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS = 10 V
ID = 5 A
0
−50 −25
9
80
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
3
Figure 1. On−Region Characteristics
70
2.0
2
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
ID = 5 A
2.5
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
80
30
50
10
4V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
60
25
50
75
100
125
150
175
TJ = 150°C
1K
TJ = 125°C
100
TJ = 85°C
10
TJ = 25°C
1
5
15
25
35
45
55
65
75
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVTFS6H888N
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
1000
C, CAPACITANCE (pF)
CISS
100
COSS
10
VGS = 0 V
TJ = 25°C
f = 1 MHz
1
10
0
CRSS
20
30
40
50
70
60
80
10
9
8
7
QGS
6
QGD
5
4
3
VDS = 40 V
TJ = 25°C
ID = 10 A
2
1
0
0
1
3
2
4
5
6
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
10
IS, SOURCE CURRENT (A)
VGS = 0 V
tf
t, TIME (ns)
tr
td(off)
10
ID, DRAIN CURRENT(A)
1000
100
VGS = 10 V
VDS = 64 V
ID = 10 A
1
10
TJ = 125°C
100
0.3
0.4
0.5
0.6
TJ = 25°C
0.7
TJ = −55°C
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10
TC = 25°C
Single Pulse
VGS ≤ 10 V
TJ(initial) = 25°C
0.5 ms
1 ms
10
10 ms
10 ms
1
TJ(initial) = 100°C
1
0.1
1
0.1
IPEAK (A)
1
td(on)
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
100
1000
0.1
1E−05
1E−04
1E−03
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
1E−02
NVTFS6H888N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
R(t) (°C/W)
10
1
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Marking
Package
Shipping†
NVTFS6H888NTAG
888N
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS6H888NWFTAG
88NW
WDFN8
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
1
SCALE 2:1
DATE 23 APR 2012
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
D1
B
2X
0.20 C
8 7 6 5
4X
E1 E
q
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
e
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
DETAIL A
8X
e/2
1
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
0.65
PITCH
PACKAGE
OUTLINE
4X
0.66
M
E3
8
5
D2
BOTTOM VIEW
1
3.60
L1
GENERIC
MARKING DIAGRAM*
XXXXX
A
Y
WW
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
L
G
SEATING
PLANE
DETAIL A
K
E2
C
6X
0.10 C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
XXXXX
AYWWG
G
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30561E
WDFN8 3.3X3.3, 0.65P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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