| 1 | BSS123LT1G | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):170mA;功率(Pd):225mW;导通电阻(RDS(on)@Vgs,Id):6Ω@10V,1... | 下载 | Murata Manufacturing Co., Ltd. |
| 2 | BSH201,215 | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):300mA;功率(Pd):417mW;导通电阻(RDS(on)@Vgs,Id):2.5Ω@10V,... | 下载 | Rubycon Corporation |
| 3 | BSS138P,215 | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):360mA;功率(Pd):350mW;导通电阻(RDS(on)@Vgs,Id):1.6Ω@10V,... | 下载 | Rubycon Corporation |
| 4 | BVSS138LT1G | 类型:N沟道;漏源电压(Vdss):50V;连续漏极电流(Id):200mA;功率(Pd):225mW;导通电阻(RDS(on)@Vgs,Id):3.5Ω@5V,2... | 下载 | Murata Manufacturing Co., Ltd. |
| 5 | BSH103,235 | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):850mA;功率(Pd):540mW;导通电阻(RDS(on)@Vgs,Id):400mΩ@4.5... | 下载 | Rubycon Corporation |
| 6 | BCX70H,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):180@2m... | 下载 | Rubycon Corporation |
| 7 | BZT-RLZ36D | BZT-RLZ36D - SILICON EPITAXIAL PLANAR ZENER DIODES - SEMTECH ELECTRONICS LTD. | 下载 | SEMTECH_ELEC[SEMTECHELECTRONICSLTD.] |
| 8 | BCW71,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):110@2m... | 下载 | Rubycon Corporation |
| 9 | BCW72,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):200@2m... | 下载 | Rubycon Corporation |
| 10 | BCX71H,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):180@2m... | 下载 | Rubycon Corporation |
| 11 | BZT-RLZ36A | BZT-RLZ36A - SILICON EPITAXIAL PLANAR ZENER DIODES - SEMTECH ELECTRONICS LTD. | 下载 | SEMTECH_ELEC[SEMTECHELECTRONICSLTD.] |
| 12 | BF840,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):25mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):67@1mA,... | 下载 | Rubycon Corporation |
| 13 | BC806-16R | 晶体管类型:PNP;集射极击穿电压(Vceo):80V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@15... | 下载 | Rubycon Corporation |
| 14 | BC807-25LVL | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):160@10... | 下载 | Rubycon Corporation |
| 15 | BC817K-16HVL | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):425mW;直流电流增益(hFE@Ic,Vce):100@10... | 下载 | Rubycon Corporation |
| 16 | BC846B,235 | 晶体管类型:NPN;集射极击穿电压(Vceo):65V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):200@2m... | 下载 | Rubycon Corporation |
| 17 | BC849B,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):30V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):200@2m... | 下载 | Rubycon Corporation |
| 18 | BC857B,235 | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):200mW;直流电流增益(hFE@Ic,Vce):220@2m... | 下载 | Rubycon Corporation |
| 19 | BCW61B,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):32V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):180@2m... | 下载 | Rubycon Corporation |
| 20 | BCW66HVL | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):800mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):250@10... | 下载 | Rubycon Corporation |
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