| 1 | PXT2907A,115 | 晶体管类型:PNP;集射极击穿电压(Vceo):60V;集电极电流(Ic):600mA;功率(Pd):1.1W;直流电流增益(hFE@Ic,Vce):100@150... | 下载 | Rubycon Corporation |
| 2 | PBSS305PX,115 | 晶体管类型:PNP;集射极击穿电压(Vceo):80V;集电极电流(Ic):4A;功率(Pd):600mW;直流电流增益(hFE@Ic,Vce):120@2A,2V... | 下载 | Rubycon Corporation |
| 3 | PBSS4360XX | 晶体管类型:NPN;集射极击穿电压(Vceo):60V;集电极电流(Ic):3A;功率(Pd):1.35W;直流电流增益(hFE@Ic,Vce):75@3A,5V; | 下载 | Rubycon Corporation |
| 4 | PBSS4540X,135 | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):4A;功率(Pd):1.4W;直流电流增益(hFE@Ic,Vce):250@2A,2V; | 下载 | Rubycon Corporation |
| 5 | PBSS5250X,135 | 晶体管类型:PNP;集射极击穿电压(Vceo):50V;集电极电流(Ic):2A;功率(Pd):1W;集电极截止电流(Icbo):100nA;集电极-发射极饱和电压... | 下载 | Rubycon Corporation |
| 6 | PBSS303PX,115 | 晶体管类型:PNP;集射极击穿电压(Vceo):30V;集电极电流(Ic):5.1A;功率(Pd):600mW;集电极截止电流(Icbo):100nA;集电极-发射... | 下载 | Rubycon Corporation |
| 7 | PDTC114ET,215 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V; | 下载 | Rubycon Corporation |
| 8 | PDTC123JT,215 | 100@10mA,5V 100mV@5mA,250uA 1 NPN - Pre Biased 250mW 100mA 50V 1uA SOT-23 Digital... | 下载 | Rubycon Corporation |
| 9 | PDTA123JT,215 | One PNP - Pre-Biased 250mW 100mA 50V SOT-23 Digital Transistors ROHS | 下载 | Rubycon Corporation |
| 10 | PDTC123ET,215 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V; | 下载 | Rubycon Corporation |
| 11 | PDTC114ET-QR | TRANS PREBIAS NPN/PNP | 下载 | Rubycon Corporation |
| 12 | PBRN113ZT,215 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):600mA;集射极击穿电压(Vceo):40V; | 下载 | Rubycon Corporation |
| 13 | PDTC124TT,215 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直... | 下载 | Rubycon Corporation |
| 14 | PDTD114ETR | 晶体管类型:1个NPN-预偏置;功率(Pd):460mW;集电极电流(Ic):-;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA;直流电... | 下载 | Rubycon Corporation |
| 15 | PMV19XNEAR | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):6A;功率(Pd):610mW；8.3W;导通电阻(RDS(on)@Vgs,Id):24mΩ@6A... | 下载 | Rubycon Corporation |
| 16 | PMV280ENEA | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;... | 下载 | Rubycon Corporation |
| 17 | PMV65XPER | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):2.8A;功率(Pd):480mW；6.25W;导通电阻(RDS(on)@Vgs,Id):78mΩ... | 下载 | Rubycon Corporation |
| 18 | PMBT3906,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):200mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@10... | 下载 | Rubycon Corporation |
| 19 | PMBS3906,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):100mA;功率(Pd):250mW; | 下载 | Rubycon Corporation |
| 20 | PBSS4032PT | 晶体管类型:PNP;集射极击穿电压(Vceo):30V;集电极电流(Ic):2.4A;功率(Pd):390mW;集电极截止电流(Icbo):100nA;集电极-发射... | 下载 | Rubycon Corporation |
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