MP6X13

Midium Power Transistors (50V / 3A) MP6X13  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage VCE (sat) = 0.35V (Max.) (IC / IB= 1A / 50mA) 2) High speed switching (1) (2) (3) (4) (5) (6) Tr.1 Tr.1 Tr.2 Tr.2 Tr.2 Tr.1 Emitter Base Collector Emitter Base Collector  Applications Low Frequency Amplifier Driver  Packaging specifications Type Package Code Basic ordering unit (pieces) MPT6 TR 1000  Inner circuit (6) (5) (4)  Absolute maximum ratings (Ta = 25 C) 　 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature *1 Pw=10ms, 1Pulse *2 Mounted on a 40 x 40 x 0.7[mm ] ceramic board. Symbol VCBO VCEO VEBO IC ICP PD PD Tj Tstg *1 *2 *2 Limits 50 50 6 3 6 2.0 1.4 150 -55 to 150 Unit V V V A A W/Total W/Element C C (1) Tr.1 (2) Tr.1 (3) Tr.2 (4) Tr.2 (5) Tr.2 (6) Tr.1 Emitter Base Collector Emitter (1) Base Collector (2) (3) Continuous Pulsed www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.11 - Rev.A MP6X13  Electrical characteristics (Ta = 25 C) 　 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time *1 Pulsed *2 See switching time test circuit Symbol BVCEO BVCBO BVEBO ICBO IEBO *1 VCE(sat) 　 Data Sheet Min. 50 50 6 180 - Typ. 130 320 13 50 450 80 Max. 1 1 350 450 - Unit V V V A A - Conditions IC= 1mA IC= 100μA IE= 100μA VCB= 50V VEB= 4V VCE= 3V, IC= 50mA mV IC= 1A, IB= 50mA VCE= 10V MHz IE=-500mA, f=100MHz pF ns ns ns VCB= 10V, IE=0A f=1MHz IC= 1.5A, IB1= 150mA, _ IB2=-150mA, VCC~ 10V hFE fT *1 Cob ton *2 tstg *2 tf *2 www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.11 - Rev.A MP6X13 3.0mA 5mA 0.5 Fig.1 Typical Output Characteristics 2.5mA 2.0mA 　 Data Sheet Fig.2 DC Current Gain vs. Collector Current ( I ) 1000 Ta=25°C 0.4 COLLECTOR CURRENT : IC[A] DC CURRENT GAIN : hFE 1.5mA 0.3 1.0mA 0.2 100 VCE=5V 3V 0.1 0.5mA Ta=25°C 0.0 0 0.5 1 1.5 2 10 1 10 100 1000 10000 COLECTOR TO EMITTER VOLTAGE :VCE[V] Fig3. DC Current Gain vs. Collector Current ( II ) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] VCE=3V 1 Ta=25°C COLLECTOR CURRENT : IC[mA] Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I ) DC CURRENT GAIN : hFE 0.1 100 Ta=125°C 75°C 25°C -40°C 0.01 IC/IB=50 20 10 10 1 10 100 1000 10000 0.001 1 10 100 1000 10000 COLLECTOR CURRENT : IC[mA] Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II ) 1 COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] COLLECTOR CURRENT : IC[mA] Fig.6 Ground Emitter Propagation Characteristics 10000 VCE=3V 0.1 COLLECTOR CURRENT : IC[mA] 1000 Ta=125°C 100 75°C 25°C -40°C 0.01 Ta=125°C 75°C 25°C -40°C IC/IB=20 10 0.001 1 10 100 1000 10000 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 COLLECTOR CURRENT : IC[mA] BASE TO EMITTER VOLTAGE : VBE[V] www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/5 2010.11 - Rev.A MP6X13 Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage 1000 COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) Ta=25°C f=1MHz IE=0A IC=0A 100 Cib 　 Data Sheet Fig.8 Gain Bandwidth Product vs. Emitter Current 1000 Ta=25°C VCE=10V TRANSITION FREQUENCY : fT[MHz] 100 10 Cob 1 0.1 1 10 100 10 10 100 EMITTER CURRENT : IE[mA] 1000 COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) Fig.9 Safe Operating Area 10 1ms COLLECTOR CURRENT : IC [A] 10ms 1 100ms DC （Mounted on a ceramic board） 0.1 Ta=25℃ When on element operated Single non repetitive pulse 0.01 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE[V] www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.11 - Rev.A MP6X13  Switching time test circuit 　 Data Sheet RL=7.5Ω V IN I B1 IC IB2 VCC _ ~10V Pw _ Pw ~ 50μs DUTY CYCLE1% I B1 BASE CURENT WAVEFORM IB2 COLLECTOR CURRENT WAVEFORM ton 90% t stg tf IC 10% www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.11 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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