SCT3105KW7TL

SCT3105KW7 Datasheet N-channel SiC power MOSFET lOutline VDSS RDS(on) (Typ.) ID*1 PD 1200V 105mΩ 23A 125W TO-263-7L lInner circuit lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. lPackaging specifications lApplication Packing ・Solar inverters Reel size (mm) 330 Tape width (mm) 24 ・DC/DC converters Type ・Switch mode power supplies Embossed tape Basic ordering unit (pcs) ・Induction heating Taping code ・Motor drives Marking 1000 TL SCT3105KW7 lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source Voltage Continuous Drain current Value Unit VDSS 1200 V Tc = 25°C ID *1 23 A Tc = 100°C ID *1 16 A 57 A -4 to +22 V -4 to +26 V 0 / +18 V Tj 175 °C Tstg -55 to +175 °C ID,pulse *2 Pulsed Drain current VGSS Gate - Source voltage (DC) Gate - Source surge voltage (tsurge < 300ns) VGSS_surge Recommended drive voltage VGS_op Junction temperature Range of storage temperature www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 Symbol 1/12 *4 *3 TSQ50252-SCT3105KW7 4.Aug.2020 - Rev.001 Datasheet SCT3105KW7 lElectrical characteristics (Ta = 25°C) Parameter Symbol Values Conditions Min. Typ. Max. V(BR)DSS Tj = 25°C 1200 - - Tj = -55°C 1200 - - Tj = 25°C - 1 10 Tj = 150°C - 2 - Unit VGS = 0V, ID = 1mA Drain - Source breakdown voltage V VGS = 0V, VDS =1200V Zero Gate voltage Drain current IDSS μA Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V, - - -100 nA 2.7 - 5.6 V - 105 137 mΩ Tj = 150°C - 179 - f = 1MHz, open drain - 13 - VDS = 0V VGS (th) VDS = 10V, ID = 3.81mA Gate threshold voltage VGS = 18V, ID = 7.6A Static Drain - Source on - state resistance RDS(on) *5 Tj = 25°C RG Gate input resistance Ω lThermal resistance Parameter Symbol RthJC Thermal resistance, junction - case Values Min. Typ. Max. - 0.90 1.2 Unit °C/W lTypical Transient Thermal Characteristics Symbol Value Unit Rth1 1.16×10 -1 Rth2 3.80×10 -1 Rth3 3.19×10 -1 K/W Tj PD Symbol Cth2 Unit Cth1 5.54×10 -4 Cth2 4.74×10 -3 Cth3 8.86×10 -3 Rth,n Rth1 Cth1 Value Ws/K Tc Cth,n Ta www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/12 TSQ50252-SCT3105KW7 4.Aug.2020 - Rev.001 Datasheet SCT3105KW7 lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Transconductance gfs *5 VDS = 10V, ID = 7.6A - 3.4 - Input capacitance Ciss VGS = 0V - 574 - Output capacitance Coss VDS = 800V - 59 - Reverse transfer capacitance Crss f = 1MHz - 28 - Effective output capacitance, energy related Co(er) - 159 - Total Gate charge Qg *5 - 51 - - 10 - - 25 - - 4 - - 12 - VGS = 0V VDS = 0V to 600V VDS = 600V Unit S pF pF ID = 7.6A *5 Gate - Source charge Qgs Gate - Drain charge Qgd *5 Turn - on delay time td(on) *5 VGS = 18V See Fig. 1-1. VDS = 600V nC ID = 7.6A Rise time Turn - off delay time tr *5 VGS = 0V/+18V td(off) *5 RG = 0Ω, L = 750μH ns - 16 - See Fig. 2-1, 2-2, 2-3. - 10 - Eon includes diode reverse recovery. - 125 - Lσ = 50nH, Cσ = 10pF Fall time tf *5 Turn - on switching loss Eon *5 Turn - off switching loss *5 www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Eoff μJ - 3/12 8 - TSQ50252-SCT3105KW7 4.Aug.2020 - Rev.001 Datasheet SCT3105KW7 lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Body diode continuous, forward current IS *1 Body diode direct current, pulsed ISM *2 Forward voltage VSD *5 Reverse recovery time Conditions Values Unit Min. Typ. Max. - - 23 A - - 57 A - 3.2 - V - 13 - ns di/dt = 2500A/μs - 175 - nC Lσ = 50nH, Cσ = 10pF See Fig. 3-1, 3-2. - 22 - A Tc = 25°C trr *5 VGS = 0V, ID = 7.6A IF = 7.6A VR = 600V *5 Reverse recovery charge Qrr Peak reverse recovery current Irrm *5 *1 Limited by maximum temperature allowed. *2 PW  10μs, Duty cycle  1% *3 Example of acceptable VGS waveform Please note especially when using driver source that VGSS_surge must be in the range of absolute maximum rating. *4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause thermal runaway. *5 Pulsed www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/12 TSQ50252-SCT3105KW7 4.Aug.2020 - Rev.001 Datasheet SCT3105KW7 lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 Operation in this area is limited by RDS(on) 120 Drain Current : ID [A] Power Dissipation : PD [W] 140 100 80 60 40 10 PW = 1μs* PW = 10μs* PW = 100μs PW = 1ms PW = 10ms 1 Ta = 25ºC Single Pulse *Calculation(PW10μs) 20 0 0.1 25 75 125 175 0.1 Case Temperature : TC [°C] 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width Transient Thermal Resistance : ZthJC [K/W] 1 0.1 0.01 Ta = 25ºC Single Pulse 0.001 0.000001 0.0001 0.01 1 100 Pulse Width : PW [s] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/12 TSQ50252-SCT3105KW7 4.Aug.2020 - Rev.001 Datasheet SCT3105KW7 lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 12 24 14V Ta = 25ºC Pulsed 10 Drain Current : ID [A] Drain Current : ID [A] 20 20V 18V 16V 12V 16 12 10V 8 4 20V 18V 16V 14V 12V Ta = 25ºC Pulsed 8 10V 6 4 VGS= 8V 2 VGS= 8V 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tj = 25ºC 3rd Quadrant Characteristics 0 Ta = 25ºC Pulsed Drain Current : ID [A] -4 VGS = -4V VGS = -2V VGS = 0V VGS = 18V -8 -12 -16 -20 -24 -10 -8 -6 -4 -2 0 Drain - Source Voltage : VDS [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 6/12 TSQ50252-SCT3105KW7 4.Aug.2020 - Rev.001 Datasheet SCT3105KW7 lElectrical characteristic curves Fig.8 Tj = 150ºC Typical Output Fig.7 Tj = 150ºC Typical Output Characteristics(I) 12 24 Characteristics(II) 20V 20V 16V 14V 16 10V 12 8 VGS= 8V 4 Ta = 150ºC Pulsed 16V 10V 14V 8 6 VGS= 8V 4 2 Ta = 150ºC Pulsed 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] Ta = 150ºC Pulsed VGS = -4V VGS = -2V VGS = 0V VGS = 18V -8 -12 -16 -20 -24 -10 -8 -6 -4 -2 3 4 5 6 ID=7.6A 5 4 3 2 Ta= 150ºC 1 Ta= 25ºC 0 -4 0 Drain - Source Voltage : VDS [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2 Fig.10 Body Diode Forward Voltage 　　　 vs. Gate - Source Voltage Body Diode Forward Voltage : VSD [V] 0 -4 1 Drain - Source Voltage : VDS [V] Fig.9 Tj = 150ºC 3rd Quadrant Characteristics Drain Current : ID [A] 12V 18V 10 Drain Current : ID [A] Drain Current : ID [A] 12V 18V 20 0 4 8 12 16 20 Gate - Source Voltage : VGS [V] 7/12 TSQ50252-SCT3105KW7 4.Aug.2020 - Rev.001 Datasheet SCT3105KW7 lElectrical characteristic curves Fig.11 Typical Transfer Characteristics (I) Fig.12 Typical Transfer Characteristics (II) 100 24 VDS = 10V Pulsed 20 10 Drain Current : ID [A] Drain Current : ID [A] VDS = 10V Pulsed Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 1 0.1 16 12 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 8 4 0.01 0 0 2 4 6 8 10 12 14 16 18 20 0 Gate - Source Voltage : VGS [V] 4 6 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Junction Temperature Fig.14 Transconductance vs. Drain Current 10 6 VDS = 10V Pulsed VDS = 10V ID = 3.81mA 5 Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 2 4 3 2 1 0 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 -50 0 50 100 150 200 0.1 Junction Temperature : Tj [ºC] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1 10 Drain Current : ID [A] 8/12 TSQ50252-SCT3105KW7 4.Aug.2020 - Rev.001 Datasheet SCT3105KW7 lElectrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature 0.30 Ta = 25ºC Pulsed 0.35 Static Drain - Source On-State Resistance : RDS(on) [Ω] Static Drain - Source On-State Resistance : RDS(on) [Ω] 0.40 ID= 16A 0.30 0.25 ID= 7.6A 0.20 0.15 0.10 ID= -7.6A 0.05 0.00 VGS = 18V Pulsed 0.24 ID= 16A 0.18 ID= 7.6A 0.12 ID= -7.6A 0.06 0.00 8 10 12 14 16 18 20 22 -50 Gate - Source Voltage : VGS [V] 100 150 200 Fig.18 Normalized Drain - Source Breakdown Voltage vs. Junction Temperature 1.04 Normalized Drain - Source Breakdown Voltage Static Drain - Source On-State Resistance : RDS(on) [Ω] 50 Junction Temperature : Tj [ºC] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current 1 0.1 Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC VGS = 18V Pulsed 0 1.03 1.02 1.01 1.00 0.99 0.98 0.01 1 10 -50 100 Drain Current : ID [A] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 0 50 100 150 200 Junction Temperature : Tj [ºC] 9/12 TSQ50252-SCT3105KW7 4.Aug.2020 - Rev.001 Datasheet SCT3105KW7 lElectrical characteristic curves Fig.19 Typical Capacitance 　　　　　vs. Drain - Source Voltage Fig.20 Coss Stored Energy 20 10000 Coss Stored Energy : EOSS [µJ] Capacitance : C [pF] Ta = 25ºC Ciss 1000 Coss 100 Crss 10 Ta = 25ºC f = 1MHz VGS = 0V 15 10 5 0 1 0.1 1 10 100 0 1000 Drain - Source Voltage : VDS [V] 200 400 600 800 Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics *Gate Charge Waveform Gate - Source Voltage : VGS [V] 20 Ta = 25ºC VDD = 600V ID = 7.6A Pulsed 15 10 5 0 0 10 20 30 40 50 60 Total Gate Charge : Qg [nC] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/12 TSQ50252-SCT3105KW7 4.Aug.2020 - Rev.001 Datasheet SCT3105KW7 lElectrical characteristic curves Fig.22 Typical Switching Time 　　　　　vs. External Gate Resistance Fig.23 Typical Switching Loss 　　　　　vs. Drain - Source Voltage 300 Ta = VDD= VGS= ID = L= 60 25°C 600V +18V/0V 7.6A 750μH Switching Energy : E [µJ] Switching Time : t [ns] 80 td(off) tr 40 tf 20 Ta = ID = VGS= RG = L= 250 200 25°C 7.6A +18V/0V 0Ω 750μH Eon 150 100 50 td(on) Eoff 0 0 0 10 20 300 30 External Gate Resistance : RG [Ω] 500 600 700 800 900 Drain - Source Voltage : VDS [V] Fig.24 Typical Switching Loss 　　　　　vs. Drain Current Fig.25 Typical Switching Loss 　　　　　vs. External Gate Resistance 600 600 Ta = VDD= VGS= RG = L= 400 25°C 600V +18V/0V 0Ω 750μH Switching Energy : E [µJ] Switching Energy : E [µJ] 400 Eon 200 Ta = ID = VDD= VGS= L= 400 25°C 7.6A 600V +18V/0V 750μH Eon 200 Eoff Eoff 0 0 0 5 10 15 20 25 0 30 10 15 20 25 30 External Gate Resistance : RG [Ω] Drain Current : ID [A] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5 11/12 TSQ50252-SCT3105KW7 4.Aug.2020 - Rev.001 Datasheet SCT3105KW7 lMeasurement circuits and waveforms Fig.1-1 Gate Charge Measurement Circuit Fig.2-1 Switching Characteristics Measurement Circuit Fig.2-2 Waveforms for Switching Time Fig.2-3 Waveforms for Switching Energy Loss Eon = ID ∙ VDS dt VDS Irr Eoff = ID ∙ VDS dt Vsurge ID Fig.3-1 Reverse Recovery Time Measurement Circuit www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 12/12 Fig.3-2 Reverse Recovery Waveform TSQ50252-SCT3105KW7 4.Aug.2020 - Rev.001 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. R1107 S Datasheet General Precaution 1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents. ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s representative. 3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001