BC327

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2.BASE Symbol 3. EMITTER Parameter Value VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage BC327 BC328 BC327 BC328 Unit VEBO Emitter-Base Voltage -50 -30 -45 -25 -5 IC Collector Current -Continuous -800 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ V V V ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage BC327 BC328 Collector-emitter breakdown voltage BC327 BC328 Test conditions Min Typ Max Unit IC= -100uA, IE=0 VCBO IC= -10mA , V -45 -25 V -5 V IB=0 VCEO Emitter-base breakdown voltage -50 -30 VEBO IE= -10uA, IC=0 BC327 BC328 ICBO VCB= -45 V , IE=0 VCB= -25V , IE=0 -0.1 -0.1 uA BC327 BC328 ICEO VCE= -40 V , IB=0 VCE= -20 V , IB=0 -0.2 -0.2 uA IEBO VEB= -4 V , -0.1 uA hFE(1) VCE=-1 V, IC= -100mA 100 hFE(2) VCE=-1 V, IC= -300mA 40 Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain IC=0 630 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.7 V Base-emitter saturation voltage VBE(sat) IC= -500mA, IB=-50mA -1.2 V VCE=-1 V, IC= -300mA -1.2 V Base-emitter voltage VBE fT Transition frequency Collector Output Capacitance Cob VCE= -5V, IC= -10mA f = 100MHz VCB=-10V,IE=0 f=1MHZ 260 MHz 12 pF CLASSIFICATION OF hFE Rank Range 16 25 40 100-250 160-400 250-630 B,Feb,2012 Typical Characterisitics BC327/BC328 hFE Static Characteristic -300 COMMON EMITTER Ta=25℃ Ta=100℃ hFE -0.7mA -0.6mA -200 -0.5mA -0.4mA -0.3mA -100 Ta=25℃ DC CURRENT GAIN COLLECTOR CURRENT IC (mA) -0.8mA -0.2mA 100 IB=-0.1mA COMMON EMITTER VCE= -1V -0 10 -0 -2 -4 COLLECTOR-EMITTER VOLTAGE VCEsat -1 —— -6 VCE -7 -10 -800 -100 (V) COLLECTOR CURRENT IC VBEsat —— IC (mA) IC -2 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) —— IC 1000 -1.0mA -0.9mA -0.1 Ta=100℃ -1 Ta=25℃ Ta=100℃ Ta=25℃ β=10 β=10 -0.01 -0.3 -1 -10 COLLECTOR CURRENT IC IC -0.1 -800 -100 -1 (mA) —— VBE fT 1000 -800 (mA) IC —— (MHz) TRANSITION FREQUENCY T= a 25 ℃ ℃ T= a 10 0 -10 -1 COMMON EMITTER VCE=-1V -0.1 -0.0 100 COMMON EMITTER VCE=-5V Ta=25℃ 10 -0.3 -0.6 -0.9 -1.2 -5 -10 BASE-EMMITER VOLTAGE VBE (V) 100 Cob/ Cib —— VCB/ VEB COLLECTOR POWER DISSIPATION PC (mW) (pF) C Cob -1 REVERSE VOLTAGE -10 VR (V) —— IC (mA) Ta 600 10 1 -0.1 PC 700 Ta=25 ℃ Cib -100 COLLECTOR CURRENT f=1MHz IE=0/IC=0 CAPACITANCE IC fT -100 IC (mA) -100 COLLECTOR CURRENT -800 COLLECTOR CURRENT -10 -20 500 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) B,Feb,2012