MMST5551

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors JC(T MMST5551 TRANSISTOR (NPN) SOT–323 FEATURES  Complementary to MMST5401  Small Surface Mount Package  Ideal for Medium Power Amplification and Switching MARKING:K4N 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V Collector cut-off current ICBO VCB=120V, IE=0 50 nA Emitter cut-off current IEBO VEB=4V, IC=0 50 nA DC current gain hFE Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Transition frequency Collector output capacitance fT Cob VCE=5V, IC=1mA 80 VCE=5V, IC=10mA 80 VCE=5V, IC=50mA 30 300 IC=50mA, IB=5mA 0.2 V IC=10mA, IB=1mA 0.15 V IC=50mA, IB=5mA 1 V IC=10mA, IB=1mA 1 V 300 MHz 6 pF VCE=10V,IC=10mA , f=100MHz VCB=10V, IE=0, f=1MHz 100 *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. www.cj-elec.com 1 C,Oct,2015 A,Jun,2014 Typical Characteristics Static Characteristic 18 80uA 15 COMMON EMITTER VCE=5V COMMON EMITTER Ta=25℃ 60uA 50uA 9 40uA 6 30uA Ta=25℃ 100 IB=20uA 3 0 10 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1.0 VCE 12 1 COLLECTOR CURRENT IC VCEsat —— 0.3 IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 0.8 Ta=25℃ 0.6 Ta=100℃ 0.4 0.2 0.1 200 100 200 IC 0.1 Ta=100℃ Ta=25℃ 0.01 1 10 COLLECTOR CURRENT VBE 200 —— 100 IC 1 200 10 (mA) COLLECTOR CURRENT IC Cob / Cib 100 —— IC (mA) VCB / VEB COMMON EMITTER VCE=5V f=1MHz IE=0 / IC=0 C Ta=100℃ Ta=25℃ Cib (pF) IC (mA) 100 100 (mA) β=10 CAPACITANCE BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 10 (V) β=10 COLLECTOR CURRENT Ta=100℃ hFE 70uA 12 DC CURRENT GAIN IC (mA) 90uA COLLECTOR CURRENT hFE —— IC 500 Ta=25℃ 10 1 0.2 0.4 0.6 BASE-EMITTER VOLTAGE fT 150 —— 0.8 Cob 1 0.1 1.0 VBE(V) 10 1 10 REVERSE VOLTAGE IC PC 250 —— V 20 (V) Ta VCE=10V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ 100 50 200 150 100 50 0 1 COLLECTOR CURRENT www.cj-elec.com 10 3 IC 20 0 30 25 50 75 AMBIENT TEMPERATURE (mA) 2 100 Ta 125 150 (℃ ) C,Oct,2015 A,Jun,2014 SOT-323 Package Outline Dimensions Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-323 Suggested Pad Layout www.cj-elec.com 3 C,Oct,2015 A,Jun,2014 SOT-323 Tape and Reel www.cj-elec.com 4 C,Oct,2015 A,Jun,2014