MMBTSA2018

MMBTSA2018 PNP Silicon Epitaxial Planar Transistor Low Frequency Transistor for switching and muting applications. ‧A collector current is large. ‧Collector saturation voltage is low. -VCE(sat) : 250mV(Max.) at -IC=200mA/-IB=10mA Features: SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range 1) Value 15 12 500 1 200 150 -55 to +150 Unit V V mA A mW O -VCBO -VCEO -IC -ICP 1) Ptot Tj TS C C O Single pulse, PW=1ms SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTSA2018 Characteristics at Tamb=25 OC Symbol DC Current Transfer Ratio at -IC=10mA, -VCE=2V Collector Cutoff Current at -VCB=15V Collector Base Breakdown Voltage at -IC=10µA Collector Emitter Breakdown Voltage at -IC=1mA Emitter Base Breakdown Voltage at -IE=10µA Collector Emitter Saturation Voltage at -IC=200mA, -IB=10mA Transition Frequency at -VCE=2V, -IE=10mA, f=100MHz Output Capacitance at -VCB=10V, f=1MHz hFE 270 680 Min. Typ. Max. Unit -ICBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) fT Cob 15 12 6 - 260 6.5 100 250 - nA V V V mV MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005