BSS 123
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level
• VGS(th) = 0.8...2.0V
Pin 1 G Type BSS 123 Type BSS 123 BSS 123
Pin 2 S Marking SAs
Pin 3 D
VDS
100 V
ID
0.17 A
RDS(on)
6Ω
Package SOT-23
Ordering Code Q62702-S512 Q67000-S245
Tape and Reel Information E6327 E6433
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 100 100 Unit V
VDS VDGR VGS Vgs ID
RGS = 20 kΩ
Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current
± 14 ± 20 A 0.17
TA = 28 °C
DC drain current, pulsed
IDpuls
0.68
TA = 25 °C
Power dissipation
Ptot
0.36
W
TA = 25 °C
Semiconductor Group
1
Sep-13-1996
BSS 123
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
Symbol
Values -55 ... + 150 -55 ... + 150 ≤ 350 ≤ 285 E 55 / 150 / 56
Unit °C K/W
Tj Tstg RthJA
Therminal resistance, chip-substrate- reverse side 1)RthJSR
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
100 1.5 2
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
0.8
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
0.1 2 10 3 4.5 1 60
µA
VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C VDS = 60 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
IGSS
50
nA Ω 6 10
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
RDS(on)
VGS = 10 V, ID = 0.17 A VGS = 4.5 V, ID = 0.17 A
Semiconductor Group
2
Sep-13-1996
BSS 123
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
0.08 0.2 65 10 4 -
S pF 85 15 6 ns 5 8
VDS≥ 2 * ID * RDS(on)max, ID = 0.17 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω
Rise time
tr
5 8
VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω
Turn-off delay time
td(off)
10 13
VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω
Fall time
tf
12 16
VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω
Semiconductor Group
3
Sep-13-1996
BSS 123
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 0.85 0.17 0.68 V 1.3 Values typ. max. Unit
TA = 25 °C
Inverse diode direct current,pulsed
ISM
-
TA = 25 °C
Inverse diode forward voltage
VSD
VGS = 0 V, IF = 0.34 A, Tj = 25 °C
Semiconductor Group
4
Sep-13-1996
BSS 123
Power dissipation Ptot = ƒ(TA)
Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V
0.18 A
0.40 W
Ptot
0.32 0.28
ID
0.14 0.12
0.24 0.10 0.20 0.08 0.16 0.12 0.08 0.04 0.00 0 20 40 60 80 100 120 °C 160 0.06 0.04 0.02 0.00 0 20 40 60 80 100 120 °C 160
TA
TA
Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C
Drain-source breakdown voltage V(BR)DSS = ƒ(Tj)
120 V 116 1 V(BR)DSS 14 112 110 108 106 104 102 100 98 96 94 92 90 -60
-20
20
60
100
°C
160
Tj
Semiconductor Group
5
Sep-13-1996
BSS 123
Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C
0.38 A 0.32
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C
19
Ptot = 0W i j k
l
h
g
f
e
VGS [V] a 2.0
b c 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0
Ω
16
a
b
c
ID
0.28
RDS (on)
14 12 10 8 6 4 2
VGS [V] =
a 2.0 2.5 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 6.0 h i 7.0 8.0 j 9.0 k 10.0
d
0.24 0.20
c
d e f g h i j
0.16 0.12 0.08 0.04
a
k l
d e f hj i g k
b
0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
0 0.00 0.04 0.08 0.12 0.16 0.20 A 0.28
VDS
ID
Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs
Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs,
1.0 A
0.40
S
ID
0.8 0.7 0.6 0.5 0.4 0.3
gfs
0.30
0.25
0.20
0.15
0.10 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 V 10 0.05 0.00 0.0 0.1 0.2 0.3 0.4 0.5 0.6
VGS
A ID
0.8
Semiconductor Group
6
Sep-13-1996
BSS 123
Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.17 A, VGS = 10 V
15
Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0
Ω
13
RDS (on) 12
11 10 9 8 7 6 5 4 3 2 1 0 -60 -20 20 60 100 °C 160
VGS(th)
3.6 3.2 2.8
98%
2.4
98%
2.0 1.6
typ
typ
1.2
2%
0.8 0.4 0.0 -60 -20 20 60 100 °C 160
Tj
Tj
Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz
10 3
Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs
10 0
pF C 10 2
A
IF
10 -1
Ciss
10 1
Coss
10 -2
Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%)
Crss
10 0 0
5
10
15
20
25
30
V VDS
40
10 -3 0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Semiconductor Group
7
Sep-13-1996
BSS 123
Package outlines SOT-23 Dimensions in mm
Semiconductor Group
8
Sep-13-1996