STB25NF06AG

STB25NF06AG Automotive-grade N-channel 60 V, 0.056 Ω typ., 19 A STripFET™ II Power MOSFET in a D²PAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STB25NF06AG 60 V 0.070 Ω 19 A 50 W TAB  2 3 1   Designed for automotive applications and AEC-Q101 qualified 100% avalanche tested Application-oriented characterization D²PAK Applications  Switching applications Figure 1: Internal schematic diagram Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications. It is also suitable for any application with low gate charge drive requirements. Table 1: Device summary Order code Marking Package Packing STB25NF06AG 25NF06 D²PAK Tape and reel May 2016 DocID029340 Rev 1 This is information on a product in full production. 1/15 www.st.com Contents STB25NF06AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 5 2/15 4.1 D²PAK (TO-263) type A package information ................................... 9 4.2 D²PAK packing information ............................................................. 12 Revision history ............................................................................ 14 DocID029340 Rev 1 STB25NF06AG 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V Drain current (continuous) at Tcase = 25 °C 19 Drain current (continuous) at Tcase = 100 °C 13 IDM(1) Drain current (pulsed) 76 A PTOT Total dissipation at Tcase = 25 °C 50 W IAV Non-repetitive avalanche current 10 A EAS Single pulse avalanche energy 220 mJ Tstg Storage temperature range -55 to 175 °C Value Unit ID Tj Operating junction temperature range A Notes: (1) Pulse width is limited by safe operating area. Table 3: Thermal data Symbol Rthj-case Rthj-pcb (1) Parameter Thermal resistance junction-case max. 3.00 Thermal resistance junction-pcb max. 35 °C/W Notes: (1)When mounted on 1 inch², 2oz Cu, FR-4 board DocID029340 Rev 1 3/15 Electrical characteristics 2 STB25NF06AG Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4: Static Symbol Parameter V(BR)DSS Drain-source breakdown voltage Test conditions VGS = 0 V, ID = 250 µA Min. Typ. Max. 60 Unit V VGS = 0 V, VDS = 60 V 1 VGS = 0 V, VDS = 60 V, Tcase = 125 °C(1) 10 Gate-body leakage current VDS = 0 V, VGS = ±20 V ±100 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 10 A 0.056 0.070 Ω Min. Typ. Max. Unit - 387 - - 103 - - 43 - - 14.1 - - 2.8 - - 5.4 - Min. Typ. Max. - 8 - - 27 - - 28 - - 15 - IDSS Zero gate voltage drain current IGSS 2 µA Notes: (1)Defined by design, not subject to production test Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 30 V, ID = 19 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior") pF nC Table 6: Switching times Symbol Parameter td(on) Turn-on delay time tr td(off) tf 4/15 Rise time Turn-off delay time Fall time Test conditions VDD = 30 V, ID = 10 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform") DocID029340 Rev 1 Unit ns STB25NF06AG Electrical characteristics Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 19 A ISDM(1) Source-drain current (pulsed) - 76 A VSD(2) Forward on voltage - 1.2 V ISD trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current VGS = 0 V, ISD = 10 A ISD = 19 A, di/dt = 100 A/µs, VDD = 48 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 34 ns - 34.5 µC - 2 A Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DocID029340 Rev 1 5/15 Electrical characteristics 2.1 6/15 STB25NF06AG Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance DocID029340 Rev 1 STB25NF06AG Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics DocID029340 Rev 1 7/15 Test circuits 3 8/15 STB25NF06AG Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform DocID029340 Rev 1 STB25NF06AG 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 D²PAK (TO-263) type A package information Figure 19: D²PAK (TO-263) type A package outline 0079457_A_rev22 DocID029340 Rev 1 9/15 Package information STB25NF06AG Table 8: D²PAK (TO-263) type A package mechanical data mm Dim. Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/15 Typ. 0.4 0° DocID029340 Rev 1 8° STB25NF06AG Package information Figure 20: D²PAK (TO-263) recommended footprint (dimensions are in mm) DocID029340 Rev 1 11/15 Package information 4.2 STB25NF06AG D²PAK packing information Figure 21: Tape outline 12/15 DocID029340 Rev 1 STB25NF06AG Package information Figure 22: Reel outline Table 9: D²PAK tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID029340 Rev 1 Min. Max. 330 13.2 26.4 30.4 13/15 Revision history 5 STB25NF06AG Revision history Table 10: Document revision history 14/15 Date Revision 12-May-2016 1 DocID029340 Rev 1 Changes Initial release. STB25NF06AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID029340 Rev 1 15/15