STGB20V60DF

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data TAB Features TAB • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 3 3 2 • Tail-less switching off 1 1 TO-220 • Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A D²PAK TAB • Tight parameters distribution • Safe paralleling • Low thermal resistance 3 3 2 2 1 TO-247 1 • Very fast soft recovery antiparallel diode • Lead free package TO-3P Figure 1. Internal schematic diagram Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGB20V60DF GB20V60DF D²PAK Tape and reel STGP20V60DF GP20V60DF TO-220 Tube STGW20V60DF GW20V60DF TO-247 Tube STGWT20V60DF GWT20V60DF TO-3P Tube June 2013 This is information on a product in full production. DocID024360 Rev 3 1/23 www.st.com 23 Contents STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2/23 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 DocID024360 Rev 3 STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0) 600 V IC Continuous collector current at TC = 25 °C 40 A IC Continuous collector current at TC = 100 °C 20 A ICP(1) Pulsed collector current 80 A VGE Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 40 A IF Continuous forward current at TC = 100 °C 20 A IFP(1) Pulsed forward current 80 A PTOT Total dissipation at TC = 25 °C 167 W TSTG Storage temperature range - 55 to 150 °C Operating junction temperature - 55 to 175 °C VCES TJ Parameter 1. Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 0.9 °C/W RthJC Thermal resistance junction-case diode 2.08 °C/W RthJA Thermal resistance junction-ambient 50 °C/W DocID024360 Rev 3 3/23 Electrical characteristics 2 STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VF Unit V 1.8 VGE = 15 V, IC = 20 A Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 20 A TJ = 175 °C Forward on-voltage Max. 600 VGE = 15 V, IC = 20 A VCE(sat) Typ. 2.2 2.15 V 2.3 IF = 20 A 1.7 IF = 20 A TJ = 125 °C 1.55 V IF = 20 A TJ = 175 °C 1.3 V VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) 5 6 2.2 V 7 V VCE = 600 V 25 μA VGE = ± 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/23 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 20 A, VGE = 15 V, see Figure 29 Qge Gate-emitter charge Qgc Gate-collector charge DocID024360 Rev 3 Min. Typ. Max. Unit - 2800 - pF - 110 - pF - 64 - pF - 116 - nC - 24 - nC - 50 - nC STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Test conditions Min. Typ. Max. Unit Turn-on delay time - 38 - ns Current rise time - 10 - ns - 1556 - A/μs - 149 - ns - 15 - ns Turn-on current slope VCE = 400 V, IC = 20 A, VGE = 15 V, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 200 - μJ Eoff(2) Turn-off switching losses - 130 - μJ Total switching losses - 330 - μJ Turn-on delay time - 37 - ns Current rise time - 12 - ns - 1340 - A/μs - 150 - ns - 23 - ns Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope VCE = 400 V, IC = 20 A, di/dt = 1000 A/μs, VGE = 15 V, TJ = 175 °C, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 430 - μJ Eoff(2) Turn-off switching losses - 210 - μJ Total switching losses - 640 - μJ Ets 1. Parameter Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions trr Reverse recovery time Qrr Reverse recovery charge IF = 20 A, VR = 400 V, VGE = 15 V, see Figure 28 di/dt = 1000 A/μs Min. Typ. Max. Unit - 40 - ns - 320 - nC - 16 - A - 910 - A/μs Irrm Reverse recovery current dIrr/ /dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 115 - μJ trr Reverse recovery time - 72 - ns Qrr Reverse recovery charge - 930 - nC Irrm Reverse recovery current - 26 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 530 - A/μs Err Reverse recovery energy - 307 - μJ IF = 20 A, VR = 400 V, VGE = 15 V, TJ = 175 °C, see Figure 28 di/dt = 1000 A/μs DocID024360 Rev 3 5/23 Electrical characteristics 2.1 STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature AM17175v1 Ptot (W) Figure 3. Collector current vs. case temperature 160 40 140 35 120 30 100 25 80 20 60 15 40 10 20 5 0 AM17174v1 I C (A) 0 0 25 50 75 0 100 125 150 175 TC (°C) Figure 4. Output characteristics (TJ = 25 °C) AM17171v1 Ic (A) 15 V 25 50 75 100 125 150 175 TC (°C) Figure 5. Output characteristics (TJ = 175 °C) AM17172v1 Ic (A) 11 V 70 70 60 60 50 50 15 V 40 11 V 40 13 V 13 V 9V 30 30 9V 20 20 10 10 VGE =7 V VGE =7 V 0 0 1 2 3 4 VCE (V) Figure 6. VCE(SAT) vs. junction temperature VCE(sat) (V) 2.8 AM17176v1 0 4 VCE (V) AM17177v1 VCE (V) TJ = 175°C 3.6 3.2 IC = 20A TJ = 25°C 2.8 2.0 2.4 1.8 2.0 IC = 10A TJ = - 40°C 1.6 1.4 1.2 -50 -25 0 3 VGE = 15V 2.4 1.6 2 4.0 2.6 2.2 1 Figure 7. VCE(SAT) vs. collector current VGE = 15V IC 40A 6/23 0 1.2 25 50 75 100 125 150 175 TJ (ºC) 0.8 DocID024360 Rev 3 0 10 20 30 40 50 60 70 80 I C (A) STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Figure 8. Collector current vs. switching frequency AM17194v1 Ic [A] Electrical characteristics Figure 9. Forward bias safe operating area AM17179v1 I C (A) Tc = 80°C 70 60 10 Tc = 100°C 50 10 μs 40 1 100 μs 1 ms 30 20 0.1 (single pulse TC =25 °C, TJ