STGP10NB60SD

STGF10NB60SD STGP10NB60SD 16 A, 600 V, low drop IGBT with soft and fast recovery diode Features ■ Low on-voltage drop (VCE(sat)) ■ High current capability ■ Very soft ultra fast recovery antiparallel diode TAB Applications ■ Light dimmer ■ Static relays ■ Motor drive 3 3 1 2 TO-220FP 1 2 TO-220 Description This IGBT utilizes the advanced Power MESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz). Table 1. Figure 1. Internal schematic diagram Device summary Order codes Marking Package Packaging STGF10NB60SD GF10NB60SD TO-220FP Tube STGP10NB60SD GP10NB60SD TO-220 Tube September 2011 Doc ID 11860 Rev 3 1/15 www.st.com 15 Contents STGF10NB60SD, STGP10NB60SD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 ............................................... 9 Doc ID 11860 Rev 3 STGF10NB60SD, STGP10NB60SD 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit STGF10NB60SD STGP10NB60SD VCES Collector-emitter voltage (VGE = 0) IC(1) Continuous collector current at TC = 25 °C 23 29 A IC(1) Continuous collector current at TC = 100 °C 12 16 A V ICL (2) Turn-off latching current 20 A (3) Pulsed collector current 80 A Gate-emitter voltage ±20 V Diode RMS forward current at TC = 25 °C 20 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 55 A VISO Isolation withstand voltage (RMS) from all three leads to external heatsink (t=1 s; TC = 25 °C) PTOT Total dissipation at TC = 25 °C Tj Operating junction temperature ICP VGE IF 1. 600 2500 V 25 80 – 55 to 150 W °C Calculated according to the iterative formula T j ( max ) – T C I C ( T C ) = ------------------------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) ) 2. Vclamp = 80% of VCES, Tj =150 °C, RG=1kΩ, VGE=15 V 3. Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Thermal data Value Symbol Parameter Unit STGF10NB60SD STGP10NB60SD Rthj-case Thermal resistance junction-case IGBT 5 1.56 °C/W Rthj-case Thermal resistance junction-case diode 5.6 2.2 °C/W Rthj-amb Thermal resistance junction-ambient Doc ID 11860 Rev 3 62.5 °C/W 3/15 Electrical characteristics 2 STGF10NB60SD, STGP10NB60SD Electrical characteristics (Tj =25 °C unless otherwise specified) Table 4. Symbol Static Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown IC= 250 µA voltage (VGE= 0) 600 V V(BR)ECS Emitter-collector breakdown IC= 1 mA voltage (VGE= 0) 20 V IGES Gate-emitter leakage current (VCE = 0) VGE= ±20 V ±100 nA ICES Collector cut-off current (VGE = 0) VCE= 600 V VCE= 600 V, Tj= 125 °C 10 100 µA µA VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA 5 V VCE(sat) Collector-emitter saturation voltage VGE= 15 V, IC= 5 A VGE= 15 V, IC= 10 A VGE= 15 V, IC= 10 A, Tj= 125 °C gfs (1) Forward transconductance 2.5 1.15 1.35 1.75 V 1.25 VCE = 15 V , IC = 10 A 5 S 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 5. Symbol Cies Coes Cres Qg 4/15 Dynamic Parameter Test conditions Min. Typ. Max. Unit Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE= 0 - 610 65 12 - pF pF pF Total gate charge VCE = 400 V, IC = 10 A, VGE = 15 V (see Figure 19) - 33 - nC Doc ID 11860 Rev 3 STGF10NB60SD, STGP10NB60SD Table 6. Electrical characteristics Switching on/off (inductive load) Symbol Parameter td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope tr(Voff) td(off) tf tr(Voff) td(off) tf Table 7. Symbol Eon (1) (2) Eoff Ets Eoff (2) Test conditions Min. Typ. Max. Unit VCC = 480 V, IC = 10 A RG= 1 kΩ, VGE= 15 V (see Figure 18) - 0.7 0.46 8 - µs µs A/µs Off voltage rise time Turn-off delay time Current fall time VCC = 480 V, IC = 10 A RG= 1 kΩ, VGE= 15 V (see Figure 18) - 2.2 1.2 1.2 - µs Off voltage rise time Turn-off delay time Current fall time VCC = 480 V, IC = 10 A RG= 1 kΩ, VGE= 15 V, Tj= 125 °C (see Figure 18) - 3.8 1.2 1.9 - µs Switching energy (inductive load) Parameter Test conditions Turn-on switching losses Turn-off switching losses Total switching losses VCC = 480 V, IC = 10 A RG= 1 kΩ, VGE= 15 V (see Figure 18) Turn-off switching losses VCC = 480 V, IC = 10 A RG= 1 kΩ, VGE= 15 V, Tj= 125 °C (see Figure 18) Min. Typ. Max. Unit - 0.6 5 5.6 - mJ mJ mJ - 8 - mJ 1. Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current. Table 8. Symbol Collector-emitter diode Parameter Test conditions Min Typ. Max Unit 2.2 VF Forward on-voltage IF = 10 A IF = 10 A, TC= 125 °C 1.4 V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 7 A, VR = 40 V, di/dt = 100 A/µs (see Figure 21) 37 40 2.1 ns nC A trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 7 A, VR = 40 V, Tj = 125 °C, di/dt = 100 A/µs (see Figure 21) 61 98 3.2 ns nC A Doc ID 11860 Rev 3 5/15 Electrical characteristics STGF10NB60SD, STGP10NB60SD 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs. temperature Figure 6. Collector-emitter on voltage vs. collector current Figure 7. Normalized gate threshold vs. temperature 6/15 Doc ID 11860 Rev 3 STGF10NB60SD, STGP10NB60SD Figure 8. Electrical characteristics Normalized breakdown voltage vs. temperature Figure 9. Gate charge vs. gate-emitter voltage Figure 10. Capacitance variations Figure 11. Switching losses vs. temperature Figure 12. Switching losses vs. gate resistance Figure 13. Switching losses vs. collector current Doc ID 11860 Rev 3 7/15 Electrical characteristics STGF10NB60SD, STGP10NB60SD Figure 14. Thermal impedance for TO-220 Figure 15. Thermal impedance for TO-220FP Figure 16. Turn-off SOA Figure 17. Forward voltage drop versus forward current IFM(A) 45 40 Tj=150°C (Maximum values) 35 30 Tj=150°C Tj (Typical values) 25 Tj=25°C (Maximum values) 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VFM(V) 8/15 Doc ID 11860 Rev 3 STGF10NB60SD, STGP10NB60SD 3 Test circuits Test circuits Figure 18. Test circuit for inductive load switching Figure 19. Gate charge test circuit Figure 20. Switching waveforms Figure 21. Diode recovery times waveform Doc ID 11860 Rev 3 9/15 Package mechanical data 4 STGF10NB60SD, STGP10NB60SD Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 Doc ID 11860 Rev 3 STGF10NB60SD, STGP10NB60SD Table 9. Package mechanical data TO-220FP mechanical data mm. Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 22. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 11860 Rev 3 11/15 Package mechanical data Table 10. STGF10NB60SD, STGP10NB60SD TO-220 type A mechanical data mm. Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 12/15 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 11860 Rev 3 STGF10NB60SD, STGP10NB60SD Package mechanical data Figure 23. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 11860 Rev 3 13/15 Revision history 5 STGF10NB60SD, STGP10NB60SD Revision history Table 11. 14/15 Document revision history Date Revision Changes 18-Nov-2005 1 New release. 16-Dec-2010 2 Inserted device in TO-220FP. Updated Table 2: Absolute maximum ratings, Table 8: Collectoremitter diode and packages mechanical data Section 4: Package mechanical data. 22-Sep-2011 3 Modified: unit value Table 7 on page 5, Figure 2 and Figure 3 on page 6. Doc ID 11860 Rev 3 STGF10NB60SD, STGP10NB60SD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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