STGW40H60DLFB

STGW40H60DLFB, STGWT40H60DLFB Trench gate field-stop IGBT, HB series 600 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A 3 3 1 2 1 TO-247 • Tight parameters distribution • Safe paralleling • Low thermal resistance TO-3P • Low VF soft recovery co-packaged diode • Lead free package Figure 1. Internal schematic diagram C (2 or TAB) Applications • Induction heating • Microwave oven • Resonant converters Description G (1) This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. E (3) Table 1. Device summary Order code Marking Package Packaging STGW40H60DLFB GW40H60DLFB TO-247 Tube STGWT40H60DLFB GWT40H60DLFB TO-3P Tube March 2014 This is information on a product in full production. DocID024370 Rev 4 1/17 www.st.com 17 Contents STGW40H60DLFB, STGWT40H60DLFB Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 2/17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1 TO-247, STGW40H60DLFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.2 TO-3P, STGWT40H60DLFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 DocID024370 Rev 4 STGW40H60DLFB, STGWT40H60DLFB 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0) 600 V IC Continuous collector current at TC = 25 °C 80 A IC Continuous collector current at TC = 100 °C 40 A ICP(1) Pulsed collector current 160 A VGE Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 80 A IF Continuous forward current at TC = 100 °C 40 A IFP(1) Pulsed forward current 160 A PTOT Total dissipation at TC = 25 °C 283 W TSTG Storage temperature range - 55 to 150 °C Operating junction temperature - 55 to 175 °C Value Unit VCES TJ Parameter 1. Pulse width limited by maximum junction temperature Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case IGBT 0.53 °C/W RthJC Thermal resistance junction-case diode 1.47 °C/W RthJA Thermal resistance junction-ambient 50 °C/W DocID024370 Rev 4 3/17 Electrical characteristics 2 STGW40H60DLFB, STGWT40H60DLFB Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VF IF = 40 A TJ = 125 °C 1.3 IF = 40 A TJ = 175 °C 1.25 VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) V 1.8 1.55 Gate threshold voltage 2 1.7 IF = 40 A VGE(th) Unit V 1.6 VGE = 15 V, IC = 40 A Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 40 A TJ = 175 °C Forward on-voltage Max. 600 VGE = 15 V, IC = 40 A VCE(sat) Typ. 5 6 1.8 V 7 V VCE = 600 V 25 µA VGE = ± 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/17 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 40 A, VGE = 15 V, see Figure 27 Qge Gate-emitter charge Qgc Gate-collector charge DocID024370 Rev 4 Min. Typ. Max. Unit - 5412 - pF - 198 - pF - 107 - pF - 210 - nC - 39 - nC - 82 - nC STGW40H60DLFB, STGWT40H60DLFB Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol td(off) tf Parameter Test conditions Turn-off delay time Current fall time Eoff(1) Turn-off switching losses td(off) Turn-off delay time tf Eoff(1) Current fall time Turn-off switching losses VCE = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, see Figure 25 VCE = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C, see Figure 25 Min. Typ. Max. 142 Unit ns - 27.6 - ns - 363 - µJ 141 ns - 61 - ns - 764 - µJ Unit 1. Turn-off losses include also the tail of the collector current. Table 7. IGBT switching characteristics (capacitive load) Symbol Eoff(1) Parameter Turn-off switching losses Test conditions Min. Typ. Max. VCC = 320 V, RG = 10 Ω, IC = 40 A, L = 100 µH, Csnub = 20 nF, see Figure 26 - 190 - VCC = 320 V, RG = 10 Ω, IC = 40 A, L = 100 µH, Csnub = 20 nF, TJ = 175 °C, see Figure 26 µJ - 290 - 1. Turn-off losses include also the tail of the collector current. DocID024370 Rev 4 5/17 Electrical characteristics 2.1 STGW40H60DLFB, STGWT40H60DLFB Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature GIPD011020131205FSR Ptot (W) 250 Figure 3. Collector current vs. case temperature GIPD011020131155FSR IC (A) 80 70 200 60 50 150 40 100 30 20 VGE ≥ 15V, TJ ≤ 175 °C 50 10 0 0 25 50 Figure 4. Output characteristics (TJ = 25°C) IC (A) 140 0 0 75 100 125 150 175 TC(°C) GIPD011020131123FSR VGE=15V 11V 75 100 125 150 175 TC(°C) Figure 5. Output characteristics (TJ = 175°C) GIPD011020131135FSR IC (A) 140 120 120 100 100 80 50 25 VGE=15V 11V 9V 80 9V 60 60 40 40 20 20 7V 0 0 1 2 3 4 Figure 6. VCE(sat) vs. junction temperature GIPD011020131319FSR VCE(sat) (V) VGE= 15V 2.6 0 0 VCE(V) IC= 80A VCE(V) GIPD011020131325FSR 2 TJ= 175°C VGE= 15V 2.4 2.2 1.8 4 3 VCE(sat) (V) 2.2 IC= 40A 2 Figure 7. VCE(sat) vs. collector current 2.4 2 1 TJ= 25°C 1.8 1.6 TJ= -40°C 1.6 IC= 20A 1.4 1.2 -50 6/17 1.4 1.2 0 50 100 150 TJ(°C) 1.0 DocID024370 Rev 4 0 20 40 60 80 IC(A) STGW40H60DLFB, STGWT40H60DLFB Electrical characteristics Figure 8. Collector current vs. switching frequency GIPD011020131340FSR IC (A) Figure 9. Forward bias safe operating area GIPD011020131351FSR IC (A) 100 TC= 80°C 100 80 TC= 100°C 10 μs 60 10 100 μs 40 Rectangular current shape (duty cycle= 0.5, VCC= 400V, Rg=4.7Ω, VGE = 0/15 V, TJ = 175 °C) 20 0 1 10 f(kHz) Figure 10. Transfer characteristics GIPD011020131146FSR IC (A) 0.1 10 1 100 VCE(V) Figure 11. Diode VF vs. forward current GIPD011020131402FSR VF (V) TJ= -40°C VCE=5V 140 -40°C 120 2.1 TJ= 25°C 100 80 1 ms Single pulse Tc= 25°C, TJ