STGWA30HP65FB2

STGWA30HP65FB2 Datasheet Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package Features • Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.65 V(typ.) @ IC = 30 A • • • • • Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficient C(2, TAB) Applications • • G(1) Welding Power factor correction Description E(3) NG1E3C2T The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. Product status link STGWA30HP65FB2 Product summary Order code STGWA30HP65FB2 Marking G30HP65FB2 Package TO-247 long leads Packing Tube DS13149 - Rev 1 - November 2019 For further information contact your local STMicroelectronics sales office. www.st.com STGWA30HP65FB2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 50 A Continuous collector current at TC = 100 °C 30 A Pulsed collector current 90 A Gate-emitter voltage ±20 Transient gate-emitter voltage (tp ≤ 10 μs) ±30 Continuous forward current at TC = 25 °C 5 Continuous forward current at TC = 100 °C 5 Pulsed forward current 10 A PTOT Total power dissipation at TC = 25 °C 167 W TSTG Storage temperature range -55 to 150 °C Operating junction temperature range -55 to 175 °C Value Unit VCES IC (1)(2) ICP VGE IF IFP(1)(2) TJ Parameter V A 1. Pulse width is limited by maximum junction temperature. 2. Defined by design, not subject to production test. Table 2. Thermal data Symbol RthJC RthJA DS13149 - Rev 1 Parameter Thermal resistance junction-case IGBT 0.9 Thermal resistance junction-case diode 5 Thermal resistance junction-ambient 50 °C/W page 2/15 STGWA30HP65FB2 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol V(BR)CES VCE(sat) Parameter Test conditions Collector-emitter breakdown voltage Collector-emitter saturation voltage VGE = 0 V, IC = 1 mA Min. Forward on-voltage 1.65 VGE = 15 V, IC = 30 A, TJ = 125 °C 1.85 VGE = 15 V, IC = 30 A, TJ = 175 °C 2.0 2 IF = 5 A, TJ = 125 °C 1.85 IF = 5 A, TJ = 175 °C 1.75 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 30 A VGE(th) Max. 650 IF = 5 A VF Typ. 6 2.1 V 2.8 V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ±20 V ±250 nA Unit Table 4. Dynamic characteristics Symbol Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V VCC = 520 V, IC = 30 A, VGE = 0 to 15 V (see Figure 27. Gate charge test circuit) Min. Typ. Max. - 1570 - - 98 - - 40 - - 90 - - 15.3 - - 41.5 - Min. Typ. Max. Unit pF nC Table 5. Switching characteristics (inductive load) Symbol td(off) Parameter Test conditions Turn-off delay time VCC = 400 V, IC = 30 A, - 71 - ns Current fall time VGE = 15 V, RG = 6.8 Ω - 41 - ns Eoff (1) Turn-off switching energy (see Figure 26. Test circuit for inductive load switching) - 310 - µJ td(off) Turn-off delay time VCC = 400 V, IC = 30 A, - 79 - ns Current fall time VGE = 15 V, RG = 6.8 Ω, TJ = 175 °C - 105 - ns Turn-off switching energy (see Figure 26. Test circuit for inductive load switching) - 643 - µJ tf tf Eoff (1) 1. Including the tail of the collector current. DS13149 - Rev 1 page 3/15 STGWA30HP65FB2 Electrical characteristics Table 6. Diode switching characteristics (inductive load) Symbol DS13149 - Rev 1 Parameter Test conditions Min. Typ. Max. Unit - 140 - ns trr Reverse recovery time Qrr Reverse recovery charge IF = 5 A, VR = 400 V, - 21 - nC Irrm Reverse recovery current VGE = 15 V, di/dt = 1000 A/µs - 6.6 - A dIrr/dt Peak rate of fall of reverse recovery current during tb (see Figure 29. Diode reverse recovery waveform) - 430 - A/µs Err Reverse recovery energy - 1.6 - µJ trr Reverse recovery time - 200 - ns - 47.3 - nC - 9.6 - A - 428 - A/µs - 3.2 - µJ Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy IF = 5 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs, TJ = 175 °C (see Figure 29. Diode reverse recovery waveform) page 4/15 STGWA30HP65FB2 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature PTOT (W) GADG111120191425PDT Figure 2. Collector current vs case temperature IC (A) GADG111120191426CCT 50 160 VGE ≥ 15 V TJ ≤ 175 °C 40 120 VGE ≥ 15 V 30 TJ ≤ 175 °C 80 20 40 10 0 25 75 125 175 TC (°C) Figure 3. Output characteristics (TJ = 25 °C) IC (A) GADG111120191427OC25 75 60 VGE = 11V IC (A) 15 15 VGE = 7V 2 3 4 5 VCE (V) Figure 5. VCE(sat) vs junction temperature VCE(sat) (V) GADG111120191429VCET VGE = 15 V IC = 60 A 2.8 VGE = 9V 0 0 VGE = 7V 1 2 3 4 5 VCE (V) Figure 6. VCE(sat) vs collector current VCE(sat) (V) GADG111120191430VCEC TJ = 175°C 2.8 2.0 IC = 15 A 1.6 TJ = 25°C 2.4 IC = 30 A 2.0 TJ = -40°C 1.6 1.2 DS13149 - Rev 1 VGE = 11V 3.2 2.4 0.8 -50 TC (°C) VGE = 13V VGE = 15V 45 30 1 175 GADG111120191428OC175 30 0 0 125 Figure 4. Output characteristics (TJ = 175 °C) 60 VGE = 9V 45 75 75 VGE = 13V VGE = 15V 0 25 1.2 0 50 100 150 TJ (°C) 0.8 0 15 30 45 60 75 IC (A) page 5/15 STGWA30HP65FB2 Electrical characteristics (curves) Figure 7. Forward bias safe operating area IC (A) GADG111120191432SOA Figure 8. Transfer characteristics IC (A) VCE = 6 V GADG111120191435TCH 75 100 60 tp =1µs 10 tp =10µs Single pulse, TC =25°C, 45 30 TJ = 175 °C tp =100µs VGE =15V, TJ ≤ 175 °C TJ = 25 °C 15 tp =1ms 1 1 10 VCE (V) 100 Figure 9. Diode VF vs forward current VF (V) IGBT090420181403DVF TJ = -40 °C 0 5 6 7 8 9 10 VGE (V) Figure 10. Normalized VGE(th) vs junction temperature VGE(th) (norm.) IGBT090420181403NVGE 1.1 TJ = 25 °C 2.4 VCE = VGE 1.0 TJ = 175 °C IC = 1 mA 0.9 1.6 0.8 0.8 0.7 0.0 0 2 4 6 8 IF (A) 0.6 -50 IGBT090420181404NVBR 1.08 50 100 150 TJ (°C) Figure 12. Capacitance variations Figure 11. Normalized V(BR)CES vs junction temperature V(BR)CES (norm.) 0 C (pF) GADG111120191436CVR f = 1 MHz Cies 1000 IC = 1 mA 1.04 100 1.00 Coes 10 Cres 0.96 0.92 -50 DS13149 - Rev 1 0 50 100 150 TJ (°C) 1 0.1 1 10 100 VCE (V) page 6/15 STGWA30HP65FB2 Electrical characteristics (curves) Figure 13. Gate charge vs gate-emitter voltage VGE (V) GADG111120191438GCGE VCC = 520 V, IC = 30 A, IG = 6 mA Figure 14. Switching energy vs collector current E (mJ) GADG111120191438SLC VCC = 400 V, RG = 6.8 Ω, 1.4 VGE = 15 V, TJ = 175 °C 15 1.2 12 1.0 9 0.8 Eoff 0.6 6 0.4 3 0 0 0.2 20 40 60 80 100 Qg (nC) Figure 15. Switching energy vs temperature E (mJ) GADG111120191439SLT VCC = 400 V, IC = 30 A, RG = 6.8 Ω ,VGE = 15 V 0.0 0 10 20 30 40 50 60 IC (A) Figure 16. Switching energy vs collector emitter voltage E (mJ) GADG111120191440SLV IC = 30 A, RG = 6.8 Ω, VGE = 15 V, TJ = 175 °C 0.8 0.8 0.6 Eoff Eoff 0.6 0.4 0.4 0.2 0.0 0 50 100 150 TJ (°C) Figure 17. Switching energy vs gate resistance GADG111120191441SLG E (mJ) IC = 30 A, VCC = 300 V, 0.9 0.2 150 250 350 450 VCE (V) Figure 18. Switching times vs collector current GADG211120191613STC t (ns) V = 400 V, V = 15 V, CC GE RG = 6.8 Ω, TJ = 175 °C VGE = 15 V, TJ = 175 °C EOFF 0.8 tf 100 td(off) 0.7 0.6 0.5 0 DS13149 - Rev 1 10 20 30 40 RG (Ω) 10 0 10 20 30 40 50 60 IC (A) page 7/15 STGWA30HP65FB2 Electrical characteristics (curves) Figure 20. Reverse recovery current vs diode current slope Figure 19. Switching times vs gate resistance GADG111120191443SLG t (ns) VCC = 400 V, VGE = 15 V, Irrm (A) IC = 30 A, TJ = 175 °C 12 td(off) IGBT120120160800RRC VCC =400 V, VGE = 15 V, IF = 5 A, TJ =175 °C 10 tf 8 100 6 4 2 10 0 10 20 30 40 Rg (Ω) 0 0 Figure 21. Reverse recovery time vs diode current slope trr (ns) 350 300 600 900 1200 di/dt (A/µs) Figure 22. Reverse recovery charge vs diode current slope IGBT120120160820RRT IGBT120120160824RRQ Qrr (µC) VCC = 400 V, VGE = 15 V, IF = 5 A, TJ = 175 °C 50 VCC = 400 V, VGE = 15 V, IF = 5 A, TJ = 175 °C 300 48 250 46 200 150 100 0 44 300 600 900 42 0 1200 di/dt (A/μs) 300 600 900 1200 di/dt (A/µs) Figure 23. Reverse recovery energy vs diode current slope Err (μJ) IGBT120120160826RRE VCC = 400 V, VGE = 15 V, IF = 5 A, TJ = 175 °C 5 4 3 2 0 DS13149 - Rev 1 300 600 900 1200 di/dt (A/µs) page 8/15 STGWA30HP65FB2 Electrical characteristics (curves) Figure 24. Thermal impedance for IGBT ZthTO2T_B K δ=0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c δ=tp/t 0.01 Single pulse tp t -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 tp (s) Figure 25. Thermal impedance for diode DS13149 - Rev 1 page 9/15 STGWA30HP65FB2 Test circuits 3 Test circuits Figure 27. Gate charge test circuit Figure 26. Test circuit for inductive load switching C A VCC A RL L=100 µH G E B B Vi ≤ VGMAX G + 3.3 µF C RG 1000 µF 100 Ω IG = CONST D.U.T. VCC 2200 μF D.U.T E 2.7 kΩ 47 kΩ - 1 kΩ PW AM01504v1 GADG160420181048IG Figure 29. Diode reverse recovery waveform Figure 28. Switching waveform di/dt 90% 10% VG 90% VCE Qrr trr IF ts tf 10% tr(Voff) IC td(on) ton td(off) tr(Ion) 10% IRRM 90% t IRRM tcross 10% VRRM tf toff AM01506v1 dv/dt GADG180720171418SA DS13149 - Rev 1 page 10/15 STGWA30HP65FB2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-247 long leads package information Figure 30. TO-247 long leads package outline 8463846_2_F DS13149 - Rev 1 page 11/15 STGWA30HP65FB2 TO-247 long leads package information Table 7. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 DS13149 - Rev 1 4.30 P 3.50 Q 5.60 S 6.05 3.60 3.70 6.00 6.15 6.25 page 12/15 STGWA30HP65FB2 Revision history Table 8. Document revision history DS13149 - Rev 1 Date Version 05-Nov-2019 1 Changes First release. page 13/15 STGWA30HP65FB2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.1 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS13149 - Rev 1 page 14/15 STGWA30HP65FB2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS13149 - Rev 1 page 15/15