STGWT20HP65FB

STGWT20HP65FB Trench gate field-stop IGBT, HB series 650 V, 20 A high speed Datasheet - production data Features TAB        3 2 TO-3P 1 Maximum junction temperature: TJ = 175 °C Minimized tail current VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameter distribution Co-packed diode for protection Safe paralleling Low thermal resistance Applications Figure 1: Internal schematic diagram  Power factor corrector (PFC) Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGWT20HP65FB GWT20HP65FB TO-3P Tube December 2016 DocID029672 Rev 3 This is information on a product in full production. 1/15 www.st.com Contents STGWT20HP65FB Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 10 4 Package information ..................................................................... 11 4.1 5 2/15 TO-3P package information ............................................................ 12 Revision history ............................................................................ 14 DocID029672 Rev 3 STGWT20HP65FB 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 40 Continuous collector current at TC = 100 °C 20 ICP(1) Pulsed collector current 80 A VGE Gate-emitter voltage ±20 V VCES IC Parameter A °C(2) 5 Continuous forward current at TC = 100 °C 5 IFP(3) Pulsed forward current 10 A PTOT Total dissipation at TC = 25 °C 168 W TSTG Storage temperature range -55 to 150 Operating junction temperature range -55 to 175 Continuous forward current at TC = 25 IF TJ A °C Notes: (1)Pulse width limited by maximum junction temperature (2)Limited by wires (3)Pulsed forward current Table 3: Thermal data Symbol Parameter Value RthJC Thermal resistance junction-case IGBT RthJC Thermal resistance junction-case diode 5 RthJA Thermal resistance junction-ambient 50 DocID029672 Rev 3 Unit 0.9 °C/W 3/15 Electrical characteristics 2 STGWT20HP65FB Electrical characteristics TJ = 25 °C unless otherwise specified Table 4: Static characteristics Symbol V(BR)CES VCE(sat) Parameter Test conditions Collector-emitter breakdown voltage Collector-emitter saturation voltage VGE = 0 V, IC = 2 mA Min. Forward on-voltage 1.55 VGE = 15 V, IC = 20 A, TJ = 125 °C 1.65 VGE = 15 V, IC = 20 A, TJ = 175 °C 1.75 1.85 IF = 5 A, TJ = 175 °C 1.75 VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 2.0 V 2 IF = 5 A, TJ = 125 °C Gate threshold voltage Unit V VGE = 15 V, IC = 20 A VGE(th) Max. 650 IF = 5 A VF Typ. 5 6 V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ±20 V ±250 nA Unit Table 5: Dynamic characteristics Symbol Cies Parameter Test conditions Input capacitance VCE = 25 V, f = 1 MHz, VGE = 0 V Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCC = 520 V, IC = 20 A, VGE = 15 V (see Figure 27: "Gate charge test circuit") Min. Typ. Max. - 2764 - - 80 - - 60 - - 120 - - 20 - - 50 - pF nC Table 6: IGBT switching characteristics (inductive load) Symbol td(off) tf Parameter Turn-off delay time Current fall time Eoff(1) Turn-off switching energy td(off) Turn-off-delay time tf Eoff(1) Current fall time Turn-off switching energy Test conditions Min. Typ. Max. Unit VCE = 400 V, IC = 20 A, VGE = 15 V, RG = 10 Ω (see Figure 26: "Test circuit for inductive load switching") - 139 - ns - 20 - ns - 170 - µJ VCE = 400 V, IC = 20 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C (see Figure 26: "Test circuit for inductive load switching") - 147 - ns - 38 - ns - 353 - µJ Notes: (1)Including 4/15 the tail of the collector current DocID029672 Rev 3 STGWT20HP65FB Electrical characteristics Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit - 140 - ns - 21 - nC - 6.6 - A - 430 - A/µs trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 1.6 - µJ trr Reverse recovery time - 200 - ns Qrr Reverse recovery charge - 47.3 - nC Irrm Reverse recovery current - 9.6 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 428 - A/µs Err Reverse recovery energy - 3.2 - µJ IF = 5 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs (see Figure 26: "Test circuit for inductive load switching") IF = 5 A, VR = 400 V, VGE = 15 V, TJ = 175 °C, di/dt = 1000 A/µs (see Figure 26: "Test circuit for inductive load switching") DocID029672 Rev 3 5/15 Electrical characteristics 2.1 6/15 STGWT20HP65FB Electrical characteristics (curves) Figure 2: Output characteristics (TJ = 25 °C) Figure 3: Output characteristics (TJ = 175 °C) Figure 4: Transfer characteristics Figure 5: Collector current vs. case temperature Figure 6: VCE(sat) vs. junction temperature Figure 7: Power dissipation vs. case temperature DocID029672 Rev 3 STGWT20HP65FB Electrical characteristics Figure 8: Forward bias safe operating area Figure 9: Collector current vs. switching frequency Figure 10: Normalized VGE(th) vs. junction temperature Figure 11: Normalized V(BR)CES vs. junction temperature Figure 12: Switching energy vs. collector current Figure 13: Switching energy vs. gate resistance DocID029672 Rev 3 7/15 Electrical characteristics STGWT20HP65FB Figure 14: Switching energy vs. temperature Figure 15: Switching energy vs. collector emitter voltage Figure 16: Switching times vs. collector current Figure 17: Switching time vs. gate resistance Figure 18: Capacitance variations Figure 19: Gate charge vs. gate-emitter voltage 8/15 DocID029672 Rev 3 STGWT20HP65FB Electrical characteristics Figure 20: Diode VF vs. forward current Figure 21: Reverse recovery current vs. diode current slope Figure 22: Reverse recovery time vs. diode current slope Figure 23: Reverse recovery charge vs. diode current slope Figure 24: Reverse recovery energy vs. diode current slope Figure 25: Thermal impedance ZthTO2T_B K δ=0.5 0.2 0.1 10 0.05 -1 0.02 Zth=k Rthj-c δ=tp/t 0.01 Single pulse tp t -2 10 -5 10 DocID029672 Rev 3 10 -4 10 -3 10 -2 10 -1 tp (s) 9/15 Test circuits 3 STGWT20HP65FB Test circuits Figure 26: Test circuit for inductive load switching C A Figure 27: Gate charge test circuit A L=100 µH G E B B 3.3 µF C G + RG 1000 µF VCC D.U.T E - AM01504v 1 Figure 28: Switching waveform 10/15 DocID029672 Rev 3 STGWT20HP65FB 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID029672 Rev 3 11/15 Package information 4.1 STGWT20HP65FB TO-3P package information Figure 29: TO-3P package outline 8045950_B 12/15 DocID029672 Rev 3 STGWT20HP65FB Package information Table 8: TO-3P package mechanical data mm Dim. Min. Typ. Max. A 4.60 4.80 5.00 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1.00 1.20 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 13.70 13.90 14.10 E 15.40 15.60 15.80 E1 13.40 13.60 13.80 E2 9.40 9.60 9.90 e 5.15 5.45 5.75 L 19.80 20.00 20.20 L1 3.30 3.50 3.70 L2 18.20 18.40 18.60 ØP 3.30 3.40 3.50 ØP1 3.10 3.20 3.30 Q 4.80 5.00 5.20 Q1 3.60 3.80 4 DocID029672 Rev 3 13/15 Revision history 5 STGWT20HP65FB Revision history Table 9: Document revision history Date Revision 31-Aug-2016 1 First release. 28-Sep-2016 2 Datasheet promoted from preliminary to production data. 3 Updated Figure 1: "Internal schematic diagram". Updated Table 4: "Static characteristics" and Table 7: "Diode switching characteristics (inductive load)". Added Figure 20: "Diode VF vs. forward current", Figure 21: "Reverse recovery current vs. diode current slope", Figure 22: "Reverse recovery time vs. diode current slope", Figure 23: "Reverse recovery charge vs. diode current slope" and Figure 24: "Reverse recovery energy vs. diode current slope". Updated Figure 2: "Output characteristics (TJ = 25 °C)", Figure 12: "Switching energy vs. collector current" and Figure 17: "Switching time vs. gate resistance". Minor text changes 13-Dec-2016 14/15 Changes DocID029672 Rev 3 STGWT20HP65FB IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID029672 Rev 3 15/15