STGWT40H65FB

STGFW40H65FB, STGW40H65FB, STGWA40H65FB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features TO-3PF 1 2 1 3 2 3 TO-247 1 2 3 TO-247 long leads • Maximum junction temperature: TJ = 175 °C • • • High speed switching series Minimized tail current Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A • • • Safe paralleling Tight parameter distribution Low thermal resistance C(2, TAB) Applications • • • • • G(1) E(3) Welding Power factor correction UPS Solar inverters Chargers G1C2TE3 Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGFW40H65FB STGW40H65FB STGWA40H65FB DS9908 - Rev 8 - March 2021 For further information contact your local STMicroelectronics sales office. www.st.com STGFW40H65FB, STGW40H65FB, STGWA40H65FB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VCES Value Parameter TO-247, TO-247 long leads TO-3PF Unit Collector-emitter voltage (VGE = 0 V) 650 Continuous collector current at TC = 25 °C 80 Continuous collector current at TC = 100 °C 40 Pulsed collector current 160 A VGE Gate-emitter voltage ±20 V PTOT Total power dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink IC ICP (1) 283 V A 98.6 W 3.5 kV (t = 1 s; TC = 25 °C) TSTG TJ Storage temperature range -55 to 150 °C Operating junction temperature range -55 to 175 °C 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol DS9908 - Rev 8 Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient Value TO-247, TO-247 long leads TO-3PF 0.53 1.52 50 Unit °C/W °C/W page 2/20 STGFW40H65FB, STGW40H65FB, STGWA40H65FB Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol Parameter Test conditions V(BR)CES Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage VGE = 0 V, IC = 2 mA Min. Typ. 650 1.6 VGE = 15 V, IC = 40 A, TJ = 125 °C 1.7 VGE = 15 V, IC = 40 A, TJ = 175 °C 1.8 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 40 A VGE(th) Max. 6 2 V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ±20 V ±250 nA Unit Table 4. Dynamic characteristics Symbol Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg DS9908 - Rev 8 Parameter Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCC = 520 V, IC = 40 A, VGE = 0 to 15 V (see Figure 27. Gate charge test circuit) Min. Typ. Max. - 5412 - - 198 - - 107 - - 210 - - 39 - - 82 - pF nC page 3/20 STGFW40H65FB, STGW40H65FB, STGWA40H65FB Electrical characteristics Table 5. Switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Min. Typ. Max. Turn-on delay time - 40 - Current rise time - 13 - Turn-on current slope - 2413 - - 142 - - 27 - Turn-off delay time Current fall time Test conditions VCE = 400 V, IC = 40 A, VGE = 15 V, RG = 5 Ω (see Figure 26. Test circuit for inductive load switching) Eon (1) Turn-on switching energy - 498 - Eoff (2) Turn-off switching energy - 363 - Total switching energy - 861 - Turn-on delay time - 38 - Current rise time - 14 - - 2186 - - 141 - - 61 - Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off delay time Current fall time VCE = 400 V, IC = 40 A, VGE = 15 V, RG = 5 Ω, TJ = 175 °C (see Figure 26. Test circuit for inductive load switching) Eon (1) Turn-on switching energy - 1417 - Eoff (2) Turn-off switching energy - 764 - Total switching energy - 2181 - Ets Unit ns A/µs ns µJ ns A/µs ns µJ 1. Including the reverse recovery of the external diode. The diode is the same of the co-packed STGW40H65DFB. 2. Including the tail of the collector current. DS9908 - Rev 8 page 4/20 STGFW40H65FB, STGW40H65FB, STGWA40H65FB Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs. case temperature for TO-247 and TO-247 long leads PTOT (W) IGBT230216EWF6GPDT VGE = 15 V, TJ ≤ 175 °C 250 Figure 2. Collector current vs. case temperature for TO-247 and TO-247 long leads IC (A) IGBT230216EWF6GCCT VGE = 15 V, TJ ≤ 175 °C 80 200 60 150 40 100 20 50 0 0 25 50 75 100 125 150 TC (°C) Figure 3. Power dissipation vs. case temperature for TO-3PF PTOT [W] GADG250220211536MT 0 0 25 50 100 125 150 TC (°C) Figure 4. Collector current vs. case temperature for TO-3PF IC [A] GADG250220211537MT 40 90 75 VGE = 15 V, TJ ≤ 175 °C VGE = 15 V, TJ ≤ 175 °C 30 60 20 30 10 0 25 75 125 175 TC °[C] Figure 5. Output characteristics (TJ = 25 °C) IC (A) IGBT230216EWF6GOC25 VGE = 15 V 140 0 25 175 11 V 80 IC (A) IGBT230216EWF6GOC175 VGE = 15 V 13 V 60 40 40 20 20 3 9V 80 60 2 11 V 100 9V 1 TC [°C] Figure 6. Output characteristics (TJ = 175 °C) 120 100 DS9908 - Rev 8 125 140 13 V 120 0 0 75 4 VCE (V) 0 0 7V 1 2 3 4 VCE (V) page 5/20 STGFW40H65FB, STGW40H65FB, STGWA40H65FB Electrical characteristics (curves) Figure 7. VCE(sat) vs. junction temperature VCE(SAT) (V) VCE(SAT) (V) IGBT230216EWF6GVCET VGE = 15 V 2.4 IC = 80 A IGBT230216EWF6GVCEC VGE = 15 V 2.4 TJ = 175 °C 2.2 2.2 2.0 2.0 TJ = 25 °C 1.8 IC = 40 A 1.8 1.6 1.6 TJ = -40 °C 1.4 1.4 1.2 IC = 20 A 1.2 -75 -25 25 75 125 175 TJ (°C) Figure 9. Collector current vs. switching frequency for TO-247 and TO-247 long leads IC (A) 1.0 0 10 20 30 40 50 60 70 IC (A) Figure 10. Collector current vs. switching frequency for TO-3PF IC [A] IGBT230216EWF6GCCS 100 GADG250220211539MT 50 80 TC = 80 ºC 40 TC = 80 °C 60 30 TC = 100 °C 40 20 Figure 8. VCE(sat) vs. collector current TC = 100 ºC 20 10 Rectangular current shape (duty cycle = 0.5, VCC = 400 V RG = 5 Ω, VGE = 0/15 V , TJ = 175 °C 0 10 0 10 1 10 2 f (kHz) Figure 11. Forward bias safe operating area for TO-247 and TO-247 long leads IC (A) Rectangular current shape (duty cycle = 0.5, VCC = 400 V, RG = 5 Ω, VGE= 0/15 V , TJ = 175 °C 0 10 0 10 1 10 2 Figure 12. Forward bias safe operating area for TO-3PF IC (A) IGBT230216EWF6GFSOA f (kHz) GADG250220211538SOA 10 2 10 2 tp =10 µs 10 1 tp =100 µs tp = 10 µs tp =1 ms 10 1 tp = 100 µs 10 single pulse, TC = 25°C TJ ≤ 175 °C, VGE = 15 V 0 10 DS9908 - Rev 8 0 10 1 10 2 tp = 1 ms VCE (V) 10 0 10 -1 10 0 single pulse TC=25 °C TJ≤175 °C VGE=15 V 10 1 101 10 2 VCE (V) page 6/20 STGFW40H65FB, STGW40H65FB, STGWA40H65FB Electrical characteristics (curves) Figure 13. Transfer characteristics IC (A) 140 IGBT230216EWF6GTCH VCE = 5 V VGE(th) (Norm.) IGBT230216EWF6GNVGE VCE = VGE , IC = 1 mA 1.2 TJ = 25 °C 120 Figure 14. Normalized VGE(th) vs. junction temperature TJ = 175 °C 100 1.0 80 60 TJ = 175 °C 0.8 40 0 6 0.6 TJ = 25 °C 20 7 8 9 10 VGE (V) 0.4 -75 Figure 15. Normalized V(BR)CES vs. junction temperature V(BR)CES (Norm.) IGBT230216EWF6GNVBR -25 25 75 125 175 TJ (°C) Figure 16. Capacitance variation C (pF) IGBT230216EWF6GCVR CIES IC = 2 mA 1.12 1.08 10 3 1.04 1.00 10 2 0.96 COES CRES 0.92 0.88 -75 -25 25 75 125 175 TJ (°C) Figure 17. Gate charge vs. gate-emitter voltage VGE (V) IGBT230216EWF6GGCGE VCC = 520 V, IC = 40 A 10 1 10 -1 10 0 10 1 VCE (V) 10 2 Figure 18. Switching energy vs. collector current E (µJ) IGBT230216EWF6GSLC VGE = 15 V, TJ = 175 °C VCC = 400 V, RG = 5 Ω 3000 15 2400 10 Eon 1800 Eoff 1200 5 600 0 0 DS9908 - Rev 8 40 80 120 160 200 Qg (nC) 0 0 10 20 30 40 50 60 70 IC (A) page 7/20 STGFW40H65FB, STGW40H65FB, STGWA40H65FB Electrical characteristics (curves) Figure 19. Switching energy vs. gate resistance E (µJ) Figure 20. Switching energy vs. temperature E (μJ) IGBT230216EWF6GSLG VCC = 400 V, IC = 40 A VGE = 15 V, TJ = 175 °C 2000 Eon IGBT230216EWF6GSLT Eon VCC = 400 V, IC = 40 A RG = 5 Ω, VGE = 15 V 1200 1600 800 Eoff 1200 Eoff 800 400 0 4 8 12 16 20 400 0 -75 RG (Ω) Figure 21. Switching energy vs. collector emitter voltage E (µJ) 2000 25 75 125 175 TJ (°C) Figure 22. Switching times vs. collector current t (ns) IGBT230216EWF6GSLV VGE = 15 V, TJ = 175 °C IC = 40 A, RG = 5 Ω -25 Eon IGBT230216EWF6GSTC VCC = 400 V, VGE = 15 V RG = 5 Ω, TJ = 175 °C t d(off) 10 2 1600 1200 tf t d(on) tr Eoff 10 1 800 400 10 0 0 150 200 250 300 350 400 450 500 VCE (V) 0 10 20 30 40 50 60 70 IC (A) Figure 23. Switching times vs. gate resistance t (ns) IGBT230216EWF6GSTR VCC = 400 V, VGE = 15 V IC = 40 A, TJ = 175 °C td(off) 10 2 tf td(on) tr 10 1 DS9908 - Rev 8 0 4 8 12 16 20 RG (Ω) page 8/20 STGFW40H65FB, STGW40H65FB, STGWA40H65FB Electrical characteristics (curves) Figure 24. Thermal impedance for TO-247 and TO-247 long leads ZthTO2T_A K δ = 0.5 δ = 0.2 δ = 0.05 δ = 0.1 δ = 0.02 10-1 δ = 0.01 Single pulse 10-2 10-5 10-4 10-3 10-2 10-1 tp (s) Figure 25. Thermal impedance for TO-3PF ZthTOF3T_A K δ=0.5 0.2 0.1 0.05 -1 10 0.02 Zth = k*RthJC δ = tp/t 0.01 Single pulse tp t -2 10 DS9908 - Rev 8 -5 10 -4 10 -3 10 -2 10 -1 10 10 tp (s) page 9/20 STGFW40H65FB, STGW40H65FB, STGWA40H65FB Test circuits 3 Test circuits Figure 27. Gate charge test circuit Figure 26. Test circuit for inductive load switching C A A k L=100 µH G E B B RG 3.3 µF C G + k 1000 µF VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 28. Switching waveform 90% 10% VG 90% VCE 10% tr(Voff) tcross 90% IC td(on) ton td(off) tr(Ion) 10% tf toff AM01506v1 DS9908 - Rev 8 page 10/20 STGFW40H65FB, STGW40H65FB, STGWA40H65FB Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-3PF package information Figure 29. TO-3PF package outline 7627132_6 DS9908 - Rev 8 page 11/20 STGFW40H65FB, STGW40H65FB, STGWA40H65FB TO-3PF package information Table 6. TO-3PF mechanical data Dim. mm Min. Max. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 DS9908 - Rev 8 Typ. 5.45 H 15.30 15.70 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15.00 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 10.00 10.20 page 12/20 STGFW40H65FB, STGW40H65FB, STGWA40H65FB TO-247 package information 4.2 TO-247 package information Figure 30. TO-247 package outline aaa 0075325_10 DS9908 - Rev 8 page 13/20 STGFW40H65FB, STGW40H65FB, STGWA40H65FB TO-247 package information Table 7. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 aaa DS9908 - Rev 8 Typ. 5.50 5.70 0.04 0.10 page 14/20 STGFW40H65FB, STGW40H65FB, STGWA40H65FB TO-247 long leads package information 4.3 TO-247 long leads package information Figure 31. TO-247 long leads package outline 8463846_2_F DS9908 - Rev 8 page 15/20 STGFW40H65FB, STGW40H65FB, STGWA40H65FB TO-247 long leads package information Table 8. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 DS9908 - Rev 8 4.30 P 3.50 Q 5.60 S 6.05 3.60 3.70 6.00 6.15 6.25 page 16/20 STGFW40H65FB, STGW40H65FB, STGWA40H65FB Ordering information 5 Ordering information Table 9. Order codes DS9908 - Rev 8 Order code Marking Package STGFW40H65FB GFW40H65FB TO-3PF STGW40H65FB GW40H65FB TO-247 STGWA40H65FB GWA40H65FB TO-247 long leads Packing Tube page 17/20 STGFW40H65FB, STGW40H65FB, STGWA40H65FB Revision history Table 10. Document revision history Date Revision Changes 30-Aug-2013 1 Initial release 11-Sep-2013 2 Document status changed from preliminary to production data. Inserted Section 2.1: Electrical characteristics (curves). 28-Feb-2014 3 Updated title and description in cover page. 05-Mar-2014 4 Updated units in Table 6: Switching characteristics (inductive load). 11-Apr-2014 5 Added part number and references for the device in a TO-3PF package. 6 Updated Section 2.1: Electrical characteristics (curves) and Section 4.3: TO-247 long leads, package information. Added device in TO-247 long leads and updated the document accordingly. 03-Nov-2016 Minor text changes. Updated Table 1: "Device summary". 21-Mar-2017 7 Added Figure 26: "Thermal impedance for TO-3PF". Minor text changes The part number STGWT40H65FB has been removed and the document has been updated accordingly. 09-Mar-2021 8 Updated title in cover page. Updated Section 1 Electrical ratings and Section 2.1 Electrical characteristics (curves). Minor text changes DS9908 - Rev 8 page 18/20 STGFW40H65FB, STGW40H65FB, STGWA40H65FB Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 5 4.1 TO-3PF package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.2 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 DS9908 - Rev 8 page 19/20 STGFW40H65FB, STGW40H65FB, STGWA40H65FB IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS9908 - Rev 8 page 20/20