STGWT40H65DFB

STGWA40H65DFB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features • Maximum junction temperature: TJ = 175 °C • • • High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A • • • Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient • • Low thermal resistance Very fast soft recovery antiparallel diode Applications • • Photovoltaic inverters High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGWA40H65DFB Product summary Order code STGWA40H65DFB Marking G40H65DFB Package TO-247 long leads Packing Tube DS11680 - Rev 2 - June 2019 For further information contact your local STMicroelectronics sales office. www.st.com STGWA40H65DFB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 80 Continuous collector current at TC = 100 °C 40 Pulsed collector current 160 Gate-emitter voltage ±20 Transient gate-emitter voltage ±30 Continuous forward current at TC = 25 °C 80 Continuous forward current at TC = 100 °C 40 IFP (1) Pulsed forward current 160 A PTOT Total power dissipation at TC = 25 °C 283 W TSTG Storage temperature range - 55 to 150 Operating junction temperature range - 55 to 175 VCES IC ICP (1) VGE IF TJ Parameter A A V A °C 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol DS11680 - Rev 2 Parameter Value RthJC Thermal resistance junction-case IGBT 0.53 RthJC Thermal resistance junction-case diode 1.14 RthJA Thermal resistance junction-ambient Unit °C/W 50 page 2/16 STGWA40H65DFB Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol Parameter V(BR)CES Collector-emitter breakdown voltage VCE(sat) VF Collector-emitter saturation voltage Forward on-voltage Test conditions VGE = 0 V, IC = 2 mA Min. Typ. 650 1.6 VGE = 15 V, IC = 40 A, TJ = 125 °C 1.7 VGE = 15 V, IC = 40 A, TJ = 175 °C 1.8 IF = 40 A 1.7 IF = 40 A, TJ = 125 °C 1.4 IF = 40 A, TJ = 175 °C 1.3 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 40 A VGE(th) Max. 6 2 V 2.45 V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ±20 V ±250 nA Unit Table 4. Dynamic characteristics Symbol Test conditions Min. Typ. Max. - 5412 - - 198 - - 107 - Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge VCC = 520 V, IC = 40 A, - 210 - Qge Gate-emitter charge VGE = 0 to 15 V - 39 - Gate-collector charge (see Figure 28. Gate charge test circuit) - 82 - Qgc DS11680 - Rev 2 Parameter VCE= 25 V, f = 1 MHz, VGE = 0 V pF nC page 3/16 STGWA40H65DFB Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Typ. Max. Turn-on delay time 40 - Current rise time 13 - 2413 - 142 - 27 - 498 - Turn-on current slope Turn-off-delay time Current fall time Test conditions Min. VCE = 400 V, IC = 40 A, VGE = 15 V, RG = 5 Ω (see Figure 27. Test circuit for inductive load switching) Eon (1) Turn-on switching energy Eoff (2) Turn-off switching energy 363 - Total switching energy 861 - Turn-on delay time 38 - Current rise time 14 - 2186 - 141 - 61 - 1417 - Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 40 A, VGE = 15 V, RG = 5 Ω, TJ = 175 °C (see Figure 27. Test circuit for inductive load switching) Eon (1) Turn-on switching energy (2) Turn-off switching energy 764 - Total switching energy 2181 - Eoff Ets Unit ns A/µs ns µJ ns A/µs ns µJ 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 6. Diode switching characteristics (inductive load) Symbol DS11680 - Rev 2 Parameter trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Test conditions Min. Typ. Max. Unit - 62 - ns - 99 - nC IF = 40 A, VR = 400 V, VGE = 15 V di/dt = 100 A/µs - 3.3 - A (see Figure 27. Test circuit for inductive load switching) - 187 - A/µs Reverse recovery energy - 68 - µJ trr Reverse recovery time - 310 - ns Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy IF = 40 A, VR = 400 V, VGE = 15 V, TJ = 175 °C di/ dt = 100 A/µs - 1550 - nC - 10 - A (see Figure 27. Test circuit for inductive load switching) - 70 - A/µs - 674 - µJ page 4/16 STGWA40H65DFB Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature PTOT (W) IGBT230216EWF6GPDT VGE = 15 V, TJ ≤ 175 °C 250 Figure 2. Collector current vs case temperature IC (A) IGBT230216EWF6GCCT VGE = 15 V, TJ ≤ 175 °C 80 200 60 150 40 100 20 50 0 0 25 50 75 100 125 150 TC (°C) Figure 3. Output characteristics (TJ = 25 °C) IC (A) IGBT230216EWF6GOC25 VGE = 15 V 140 0 0 11 V 80 IC (A) 125 40 40 20 20 2 3 4 VCE (V) Figure 5. VCE(sat) vs junction temperature VCE(SAT) (V) IGBT230216EWF6GVCET VGE = 15 V TC (°C) IGBT230216EWF6GOC175 VGE = 15 V 13 V 11 V 9V 80 9V 1 150 100 60 IC = 80 A 7V 0 0 1 2 3 4 VCE (V) Figure 6. VCE(sat) vs collector current VCE(SAT) (V) 2.4 IGBT230216EWF6GVCEC VGE = 15 V TJ = 175 °C 2.2 2.2 2.0 2.0 TJ = 25 °C 1.8 IC = 40 A 1.8 1.6 1.6 TJ = -40 °C 1.4 1.4 DS11680 - Rev 2 100 Figure 4. Output characteristics (TJ = 175 °C) 60 1.2 -75 75 120 100 2.4 50 140 13 V 120 0 0 25 1.2 IC = 20 A -25 25 75 125 175 TJ (°C) 1.0 0 10 20 30 40 50 60 70 IC (A) page 5/16 STGWA40H65DFB Electrical characteristics (curves) Figure 7. Collector current vs switching frequency IC (A) IGBT230216EWF6GCCS Figure 8. Forward bias safe operating area IC (A) IGBT230216EWF6GFSOA 100 80 10 2 TC = 80 °C 60 TC = 100 °C tp = 10 µs 10 1 40 tp = 100 µs 20 Rectangular current shape (duty cycle = 0.5, VCC = 400 V RG = 5 Ω, VGE = 0/15 V , TJ = 175 °C 0 10 0 10 1 f (kHz) 10 2 Figure 9. Transfer characteristics IC (A) 140 IGBT230216EWF6GTCH VCE = 5 V TJ = 175 °C 100 80 60 10 1 tp = 1 ms VCE (V) 10 2 Figure 10. Diode VF vs forward current VF (V) IGBT230216EWF6GDVF TJ = -40 °C 2.3 TJ = 25 °C 120 single pulse, TC = 25°C TJ ≤ 175 °C, VGE = 15 V 10 0 10 0 2.0 TJ = 25 °C 1.7 TJ = 175 °C TJ = 175 °C 1.4 40 TJ = 25 °C 20 0 6 7 8 9 1.1 10 VGE (V) Figure 11. Normalized VGE(th) vs junction temperature VGE(th) (Norm.) IGBT230216EWF6GNVGE 30 40 50 60 70 80 IF (A) Figure 12. Normalized V(BR)CES vs junction temperature V(BR)CES (Norm.) IGBT230216EWF6GNVBR IC = 2 mA 1.12 VCE = VGE , IC = 1 mA 1.2 0.8 20 1.08 1.0 1.04 1.00 0.8 0.96 0.6 0.4 -75 DS11680 - Rev 2 0.92 -25 25 75 125 175 TJ (°C) 0.88 -75 -25 25 75 125 175 TJ (°C) page 6/16 STGWA40H65DFB Electrical characteristics (curves) Figure 13. Capacitance variations C (pF) IGBT230216EWF6GCVR CIES Figure 14. Gate charge vs gate-emitter voltage VGE (V) IGBT230216EWF6GGCGE VCC = 520 V, IC = 40 A 15 10 3 10 10 2 COES 5 CRES 10 1 10 -1 10 0 10 1 VCE (V) 10 2 Figure 15. Switching energy vs collector current E (µJ) IGBT230216EWF6GSLC VGE = 15 V, TJ = 175 °C VCC = 400 V, RG = 5 Ω 3000 2400 0 0 40 80 120 160 Qg (nC) Figure 16. Switching energy vs gate resistance E (µJ) IGBT230216EWF6GSLG VCC = 400 V, IC = 40 A VGE = 15 V, TJ = 175 °C 2000 Eon 200 Eon 1600 1800 1200 Eoff 1200 0 0 10 20 30 40 50 60 70 IC (A) Figure 17. Switching energy vs temperature E (μJ) Eoff 800 600 IGBT230216EWF6GSLT VCC = 400 V, IC = 40 A RG = 5 Ω, VGE = 15 V Eon 400 0 4 8 12 16 20 RG (Ω) Figure 18. Switching energy vs collector emitter voltage E (µJ) 2000 IGBT230216EWF6GSLV VGE = 15 V, TJ = 175 °C IC = 40 A, RG = 5 Ω Eon 1200 1600 800 1200 Eoff Eoff 800 400 400 0 -75 DS11680 - Rev 2 -25 25 75 125 175 TJ (°C) 0 150 200 250 300 350 400 450 500 VCE (V) page 7/16 STGWA40H65DFB Electrical characteristics (curves) Figure 19. Switching times vs collector current t (ns) IGBT230216EWF6GSTC VCC = 400 V, VGE = 15 V RG = 5 Ω, TJ = 175 °C Figure 20. Switching times vs gate resistance t (ns) IGBT230216EWF6GSTR VCC = 400 V, VGE = 15 V IC = 40 A, TJ = 175 °C t d(off) td(off) 10 2 tf t d(on) 10 2 tr 10 tf td(on) 1 tr 10 0 0 10 20 30 40 50 60 70 IC (A) Figure 21. Reverse recovery current vs diode current slope Irrm (A) IGBT230216EWF6GRRC Vr = 400 V, IF = 40 A 10 1 0 4 8 trr (ns) RG (Ω) IGBT230216EWF6GRRT Vr = 400 V, IF = 40 A 200 150 40 TJ = 25 °C TJ = 175 °C 100 20 TJ = 25 °C 50 0 0 500 1000 1500 2000 2500 di/dt (A/µs) Figure 23. Reverse recovery charge vs diode current slope Qrr (nC) IGBT230216EWF6GRRQ Vr = 400 V, IF = 40 A 4000 0 0 500 1000 1500 2000 2500 di/dt (A/µs) Figure 24. Reverse recovery energy vs diode current slope Err (µJ) IGBT230216EWF6GRRE Vr = 400 V, IF = 40 A 1200 TJ = 175 °C 3000 900 2000 TJ = 175 °C 600 300 TJ = 25 °C 0 0 DS11680 - Rev 2 20 250 TJ = 175 °C 60 1000 16 Figure 22. Reverse recovery time vs diode current slope 300 80 12 500 1000 1500 2000 2500 di/dt (A/µs) 0 0 TJ = 25 °C 500 1000 1500 2000 2500 di/dt (A/µs) page 8/16 STGWA40H65DFB Electrical characteristics (curves) Figure 25. Thermal impedance for IGBT K ZthTO2T_A δ = 0.5 δ = 0.2 δ = 0.05 δ = 0.1 δ = 0.02 10 -1 δ = 0.01 Single pulse 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 tp (s) Figure 26. Thermal impedance for diode DS11680 - Rev 2 page 9/16 STGWA40H65DFB Test circuits 3 Test circuits Figure 28. Gate charge test circuit Figure 27. Test circuit for inductive load switching C A A k L=100 µH G E B B 3.3 µF C G + k RG 1000 µF VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 30. Diode reverse recovery waveform Figure 29. Switching waveform di/dt IF 90% Qrr trr ts tf 10% VG VCE 10% tr(Voff) 10% IRRM tcross VRRM 90% IC td(on) ton td(off) tr(Ion) t IRRM 90% 10% tf toff dv/dt AM01506v1 DS11680 - Rev 2 GADG180720171418SA page 10/16 STGWA40H65DFB Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DS11680 - Rev 2 page 11/16 STGWA40H65DFB TO-247 long leads package information 4.1 TO-247 long leads package information Figure 31. TO-247 long leads package outline 8463846_2_F DS11680 - Rev 2 page 12/16 STGWA40H65DFB TO-247 long leads package information Table 7. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 DS11680 - Rev 2 4.30 P 3.50 Q 5.60 S 6.05 3.60 3.70 6.00 6.15 6.25 page 13/16 STGWA40H65DFB Revision history Table 8. Document revision history DS11680 - Rev 2 Date Revision 06-Jun-2016 1 24-Jun-2019 2 Changes Initial version. Part number previously included in datasheet DocID024363. Modified Table 1. Absolute maximum ratings. Minor text changes. page 14/16 STGWA40H65DFB Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.1 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 DS11680 - Rev 2 page 15/16 STGWA40H65DFB IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS11680 - Rev 2 page 16/16