STGWT80H65DFB

STGW80H65DFB, STGWT80H65DFB Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT Features TAB 3 2 3 1 1 TO-247 2 TO-3P • Maximum junction temperature: TJ = 175 °C • • • High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A • • • Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient • • Low thermal resistance Very fast soft recovery antiparallel diode Applications • • Photovoltaic inverters High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGW80H65DFB STGWT80H65DFB Product summary Order code STGW80H65DFB Marking GW80H65DFB Package TO-247 Packing Tube Order code STGWT80H65DFB Marking GWT80H65DFB Package TO-3P Packing Tube DS9536 - Rev 9 - June 2019 For further information contact your local STMicroelectronics sales office. www.st.com STGW80H65DFB, STGWT80H65DFB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VCES IC ICP (2) VGE Parameter Collector-emitter voltage (VGE = 0) Value Unit 650 V Continuous collector current at TC = 25 °C 120 (1) Continuous collector current at TC = 100 °C 80 Pulsed collector current (tp ≤ 1 μs, TJ < 175 °C) 300 A Gate-emitter voltage ±20 V Transient gate-emitter voltage ±30 V A Continuous forward current at TC = 25 °C 120 (1) Continuous forward current at TC = 100 °C 80 IFP (2) Pulsed forward current (tp ≤ 1 μs, TJ < 175 °C) 300 A PTOT Total power dissipation at TC = 25 °C 470 W TSTG Storage temperature range - 55 to 150 Operating junction temperature range - 55 to 175 IF TJ A °C 1. Current level is limited by bond wires 2. Defined by design, not subject to production test. Table 2. Thermal data Symbol DS9536 - Rev 9 Parameter Value RthJC Thermal resistance junction-case IGBT 0.32 RthJC Thermal resistance junction-case diode 0.66 RthJA Thermal resistance junction-ambient Unit °C/W 50 page 2/18 STGW80H65DFB, STGWT80H65DFB Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol V(BR)CES VCE(sat) VF Parameter Test conditions Collector-emitter breakdown voltage Collector-emitter saturation voltage Forward on-voltage VGE = 0 V, IC = 2 mA Min. Typ. 650 1.6 VGE = 15 V, IC = 80 A, TJ = 125 °C 1.8 VGE = 15 V, IC = 80 A, TJ = 175 °C 1.9 IF = 80 A 1.9 IF = 80 A, TJ = 125 °C 1.6 IF = 80 A, TJ = 175 °C 1.5 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 80 A VGE(th) Max. 6 2 V 2.3 V 7 V VGE = 0 V, VCE = 650 V 100 µA VCE = 0 V, VGE = ±20 V ±250 nA Unit Table 4. Dynamic characteristics Symbol DS9536 - Rev 9 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Test conditions VCE= 25 V, f = 1 MHz, VGE = 0 V VCC = 520 V, IC = 80 A, VGE = 15 V (see Figure 29. Gate charge test circuit) Min. Typ. Max. - 10524 - - 385 - - 215 - - 414 - - 78 - - 170 - pF nC page 3/18 STGW80H65DFB, STGWT80H65DFB Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Typ. Max. Turn-on delay time 84 - Current rise time 52 - 1270 - 280 - 31 - 2.1 - Turn-on current slope Turn-off-delay time Current fall time Test conditions Min. VCE = 400 V, IC = 80 A, VGE = 15 V, RG = 10 Ω (see Figure 28. Test circuit for inductive load switching) Eon (1) Turn-on switching energy Eoff (2) Turn-off switching energy 1.5 - Total switching energy 3.6 - Turn-on delay time 77 - Current rise time 51 - 1270 - 328 - 30 - 4.4 - Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 80 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C (see Figure 28. Test circuit for inductive load switching) Unit ns A/µs ns mJ ns A/µs ns Eon (1) Turn-on switching energy (2) Turn-off switching energy 2.1 - Total switching energy 6.5 - Min. Typ. Max. Unit - 85 - ns - 1105 - nC - 26 - A - 722 - A/µs Eoff Ets mJ 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 6. Diode switching characteristics (inductive load) Symbol DS9536 - Rev 9 Parameter Test conditions trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 267 - µJ trr Reverse recovery time - 149 - ns Qrr Reverse recovery charge - 4920 - nC Irrm Reverse recovery current - 66 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 546 - A/µs Err Reverse recovery energy - 1172 - µJ IF = 80 A, VR = 400 V, VGE = 15 V di/ dt = 100 A/µs (see Figure 28. Test circuit for inductive load switching) IF = 80 A, VR = 400 V, VGE = 15 V, TJ = 175 °C di/dt = 100 A/µs (see Figure 28. Test circuit for inductive load switching) page 4/18 STGW80H65DFB, STGWT80H65DFB Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature PTOT (W) GIPD160920130948FSR VGE = 15 V, TJ = 175 °C Figure 2. Collector current vs case temperature GIPD160920130941FSR IC (A) VGE =15 V,TJ =175 °C 120 400 100 300 80 60 200 40 100 20 0 0 50 100 150 TC(°C) Figure 3. Output characteristics (TJ = 25 °C) IC (A) 160 V GE = 15 V 140 IGBT060715EWFRWOC25 13 V 11 V 0 IC (A) 160 120 100 100 80 80 60 60 40 40 20 20 2 3 4 7V V CE (V) Figure 5. VCE(sat) vs junction temperature V CE(sat) (V) IGBT060715EWFRWVCET V GE = 15 V I C = 160 A 13 V 11 V 9V 0 0 7V 1 2 3 4 V CE (V) Figure 6. VCE(sat) vs collector current V CE(sat) (V) IGBT060715EWFRWVCEC V GE = 15 V T J = 175 °C T J = 25 °C 2.0 2.2 T J = -40 °C 1.6 I C = 80 A 1.8 TC(°C) IGBT060715EWFRWOC175 V GE = 15 V 2.4 2.6 75 100 125 150 140 9V 1 50 25 Figure 4. Output characteristics (TJ = 175 °C) 120 0 0 0 1.2 0.8 1.4 1.0 -50 DS9536 - Rev 9 I C = 40 A 0 50 100 0.4 150 T J (°C) 0.0 0 40 80 120 160 I C (A) page 5/18 STGW80H65DFB, STGWT80H65DFB Electrical characteristics (curves) Figure 7. Collector current vs switching frequency GIPD260520141426FSR Ic [A] Figure 8. Forward bias safe operating area IC (A) IGBT171120161002FSOA 160 140 tp = 1µs Tc=80°C 10 2 Tc=100 °C 120 tp = 10µs 100 60 tp = 100µs 10 1 80 rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=10 Ω, VGE = 0/15 V, TJ =175°C) 40 1 f [kHz] 10 Figure 9. Transfer characteristics IC (A) 10 10 0 10 1 VCE (V) 10 2 Figure 10. Diode VF vs forward current GIPD160920131135FSR VF (V) 2.4 IGBT060715EWFRWTCH V CE = 4 V 200 single pulse, TC = 25°C TJ < 175 °C, VGE = 15 V 0 -40°C 2.0 160 120 25°C 1.6 TJ= 175°C 80 T J = 175 °C 1.2 40 0 5 T J = 25 °C 6 7 8 9 Figure 11. Normalized VGE(th) vs junction temperature VGE(th) GIPD160920131151FSR (norm) 1.1 0.8 20 V GE (V) IC = 1mA 40 80 60 100 120 140 IF(A) Figure 12. Normalized V(BR)CES vs junction temperature VBR(CES) (norm) GIPD160920131144FSR IC = 2 mA 1.1 1.0 0.9 1.0 0.8 0.7 0.6 -50 DS9536 - Rev 9 0 50 100 150 TJ(°C) 0.9 -50 0 50 100 150 TJ(°C) page 6/18 STGW80H65DFB, STGWT80H65DFB Electrical characteristics (curves) Figure 13. Capacitance variations C (pF) Figure 14. Gate charge vs gate-emitter voltage VGE (V) 16 GIPD160920131200FSR CIES 10000 GIPD160920131156FSR IC = 80 A VCC = 520 V 12 8 1000 COES CRES 100 10 0.1 1 10 100 VCE(V) Figure 15. Switching energy vs collector current GIPD160920131436FSR E (µJ) VCC= 400V, VGE = 15V RG= 10Ω, TJ= 175°C 9000 4 0 0 100 200 300 400 Qg(nC) Figure 16. Switching energy vs gate resistance E (µJ) GIPD160920131208FSR VCC= 400V, VGE = 15V IC= 80A, TJ= 175°C 5000 8000 7000 6000 EON 4200 EON 3400 5000 4000 2600 3000 EOFF 2000 1000 0 0 20 40 60 80 100 120 140 IC(A) Figure 17. Switching energy vs temperature GIPD160920131504FSR E (µJ) 4500 VCC= 400V, VGE = 15V IC= 80A, Rg = 10Ω 4000 EOFF 1800 1000 2 6 10 14 18 RG(Ω) Figure 18. Switching energy vs collector emitter voltage E (µJ) 6000 EON GIPD160920131524FSR TJ= 175°C, VGE = 15V IC= 80A, Rg = 10Ω EON 5000 3500 4000 3000 2500 EOFF 3000 2000 2000 1500 1000 DS9536 - Rev 9 0 25 50 75 100 125 150 175 TJ(°C) 1000 150 200 250 300 350 400 450 EOFF VCE(V) page 7/18 STGW80H65DFB, STGWT80H65DFB Electrical characteristics (curves) Figure 19. Switching times vs collector current GIPD160920131533FSR t (ns) tdoff 100 1 20 tdoff TJ= 175°C, VGE = 15V VCC= 400V, I C= 80A tdon 100 tr tf tf TJ= 175°C, VGE = 15V VCC= 400V, R g= 10Ω 40 60 80 100 120 140 IC(A) Figure 21. Reverse recovery current vs diode current slope GIPD160920131550FSR Irm (A) GIPD160920131539FSR t (ns) tdon tr 10 Figure 20. Switching times vs gate resistance VF= 400V, = 80IF= A 80A 10 4 8 16 20 Rg(Ω) Figure 22. Reverse recovery time vs diode current slope GIPD160920131557FSR t rr (ns) VF= 400V, IF= 80A 350 120 12 300 250 TJ= 175°C 80 200 TJ= 175°C 150 100 40 TJ= 25°C 0 0 500 1000 1500 2000 2500 di/dt(A/µs) Figure 23. Reverse recovery charge vs diode current slope Qrr (nC) GIPD160920131602FSR VF= 400V, IF= 80A 50 0 0 TJ= 25°C 500 2000 2500 di/dt(A/µs) Figure 24. Reverse recovery energy vs diode current slope GIPD160920131610FSR Err (µJ) 1200 TJ= 175°C 6000 TJ= 175°C 1000 5000 800 VF= 400V, IF= 80A 4000 600 3000 400 2000 1000 DS9536 - Rev 9 1500 r 7000 0 0 1000 TJ= 25°C 500 1000 1500 2000 2500 di/dt(A/µs) 200 0 0 TJ= 25°C 500 1000 1500 2000 2500 di/dt(A/µs) page 8/18 STGW80H65DFB, STGWT80H65DFB Electrical characteristics (curves) Figure 25. Thermal impedance for IGBT K ZthTO2T_A δ = 0.5 δ = 0.2 δ = 0.05 δ = 0.1 δ = 0.02 10 -1 δ = 0.01 Single pulse 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 tp (s) Figure 26. Thermal impedance for diode DS9536 - Rev 9 page 9/18 STGW80H65DFB, STGWT80H65DFB Test circuits 3 Test circuits Figure 27. Test circuit for inductive load switching C A Figure 28. Gate charge test circuit A k L=100 µH G E B B 3.3 µF C G + k RG 1000 µF VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 30. Diode reverse recovery waveform Figure 29. Switching waveform 90% 10% VG 90% VCE 10% tr(Voff) 25 tcross 90% IC td(on) ton td(off) tr(Ion) 10% tf toff AM01506v1 DS9536 - Rev 9 page 10/18 STGW80H65DFB, STGWT80H65DFB Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DS9536 - Rev 9 page 11/18 STGW80H65DFB, STGWT80H65DFB TO-247 package information 4.1 TO-247 package information Figure 31. TO-247 package outline 0075325_9 DS9536 - Rev 9 page 12/18 STGW80H65DFB, STGWT80H65DFB TO-247 package information Table 7. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 DS9536 - Rev 9 Typ. 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70 page 13/18 STGW80H65DFB, STGWT80H65DFB TO-3P package information 4.2 TO-3P package information Figure 32. TO-3P package outline 8045950_3 DS9536 - Rev 9 page 14/18 STGW80H65DFB, STGWT80H65DFB TO-3P package information Table 8. TO-3P package mechanical data Dim. DS9536 - Rev 9 mm Min. Typ. Max. A 4.60 4.80 5.00 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1.00 1.20 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 13.70 13.90 14.10 E 15.40 15.60 15.80 E1 13.40 13.60 13.80 E2 9.40 9.60 9.90 e 5.15 5.45 5.75 L 19.80 20.00 20.20 L1 3.30 3.50 3.70 L2 18.20 18.40 18.60 ØP 3.30 3.40 3.50 ØP1 3.10 3.20 3.30 Q 4.80 5.00 5.20 Q1 3.60 3.80 4.00 page 15/18 STGW80H65DFB, STGWT80H65DFB Revision history Table 9. Document revision history Date Revision Changes 12-Mar-2013 1 First release. 18-Sep-2013 2 Document status promoted from preliminary to production data. Added Section 2.1: Electrical characteristics (curves) 20-Nov-2013 3 Added device in Max247. Modified Table 1 accordingly. Updated Section 4: Package information. Minor text changes in cover page. Updated title and description in cover page. 24-Jan-2014 4 Updated Table 6: IGBT switching characteristics (inductive load), Table 7: Diode switching characteristics (inductive load), Figure 9: Forward bias safe operating area andFigure 14: Switching energy vs. temperature. Updated Figure 5: Collector current vs. case temperature, Figure 6: Power dissipation vs. case temperature, Figure 18: Switching times vs. collector current, Figure 19: Switching times vs. gate resistance and Figure 24: Capacitance variations. 13-Jun-2014 5 Added Figure 25: Collector current vs. switching frequency. Updated Section 4: Package information. Minor text changes. 07-May-2015 21-Sep-2016 6 7 Added TO-247 long leads package information. Updated Figure 2: "Output characteristics (TJ= 25 °C) ", Figure 3: "Output characteristics (TJ= 175 °C) ", Figure 4: "Transfer characteristics ", Figure 7: "VCE(sat) vs. junction temperature" and Figure 8: "VCE (sat) vs. collector current". The part number STGY80H65DFB has been moved to a separate datasheet. Minor text changes. 17-Nov-2016 8 14-Jun-2019 9 Updated Table 2: "Absolute maximum ratings" and Figure 9: "Forward bias safe operating area". The part number STGWA80H65DFB has been moved to a separate datasheet. Updated document accordingly. Modified Table 1. Absolute maximum ratings. Updated Section 4.1 TO-247 package information. Minor text changes. DS9536 - Rev 9 page 16/18 STGW80H65DFB, STGWT80H65DFB Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.2 TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 DS9536 - Rev 9 page 17/18 STGW80H65DFB, STGWT80H65DFB IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS9536 - Rev 9 page 18/18