STGWT40HP65FB

STGWT40HP65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features TAB        3 2 TO-3P 1 Maximum junction temperature: TJ = 175 °C Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameter distribution Co-packed diode for protection Safe paralleling Low thermal resistance Applications Figure 1: Internal schematic diagram  Power factor corrector (PFC) Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGWT40HP65FB GWT40HP65FB TO-3P Tube July 2016 DocID028465 Rev 3 This is information on a product in full production. 1/17 www.st.com Contents STGWT40HP65FB Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 12 4 Package information ..................................................................... 13 4.1 5 2/17 TO-3P package information ............................................................ 14 Revision history ............................................................................ 16 DocID028465 Rev 3 STGWT40HP65FB 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 80 Continuous collector current at TC = 100 °C 40 ICP(1) Pulsed collector current 160 A VGE Gate-emitter voltage ± 30 V VCES IC Parameter A Continuous forward current at TC = 25 °C 5 Continuous forward current at TC = 100 °C 5 IFP(3) Pulsed forward current 10 A PTOT Total dissipation at TC = 25 °C 283 W TSTG Storage temperature range - 55 to 150 Operating junction temperature range - 55 to 175 IF(2) TJ A °C Notes: (1)Pulse width limited by maximum junction temperature. (2)Limited by wires. (3)Pulsed forward current. Table 3: Thermal data Symbol Parameter Value RthJC Thermal resistance junction-case IGBT RthJC Thermal resistance junction-case diode 5 RthJA Thermal resistance junction-ambient 50 DocID028465 Rev 3 Unit 0.53 °C/W 3/17 Electrical characteristics 2 STGWT40HP65FB Electrical characteristics TJ = 25 °C unless otherwise specified Table 4: Static characteristics Symbol V(BR)CES VCE(sat) Parameter Test conditions Collector-emitter breakdown voltage Collector-emitter saturation voltage VGE = 0 V, IC = 2 mA Min. Forward on-voltage 1.6 VGE = 15 V, IC = 40 A, TJ = 125 °C 1.7 VGE = 15 V, IC = 40 A, TJ = 175 °C 1.8 1.85 IF = 5 A, TJ = 175 °C 1.75 VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current 2.0 V 2 IF = 5 A, TJ = 125 °C Gate threshold voltage Unit V VGE = 15 V, IC = 40 A VGE(th) Max. 650 IF = 5 A VF Typ. 5 6 V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ±20 V ±250 nA Unit Table 5: Dynamic characteristics Symbol Cies Parameter Test conditions Min. Typ. Max. - 5412 - - 198 - - 107 - - 210 - - 39 - - 82 - Min. Typ. Max. Unit VCE = 400 V, IC = 40 A, VGE = 15 V, RG = 5 Ω (see Figure 28: "Test circuit for inductive load switching") - 142 - ns - 27 - ns - 363 - µJ VCE = 400 V, IC = 40 A, VGE = 15 V, RG = 5 Ω TJ = 175 °C (see Figure 28: "Test circuit for inductive load switching") - 141 - ns - 61 - ns - 764 - µJ Input capacitance VCE = 25 V, f = 1 MHz, VGE = 0 V Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCC = 520 V, IC = 40 A, VGE = 15 V (see Figure 29: "Gate charge test circuit") pF nC Table 6: IGBT switching characteristics (inductive load) Symbol td(off) tf Eoff Parameter Test conditions Turn-off-delay time Current fall time (1) td(off) tf Eoff Turn-off switching energy Turn-off-delay time Current fall time Turn-off switching energy Notes: (1)Including 4/17 the tail of the collector current. DocID028465 Rev 3 STGWT40HP65FB Electrical characteristics Table 7: Diode switching characteristics (inductive load) Symbol Parameter trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy Test conditions IF = 5 A, VR = 400 V, VGE = 15 V (see Figure 28: "Test circuit for inductive load switching") di/dt = 1000 A/µs IF = 5 A, VR = 400 V, VGE = 15 V TJ = 175 °C (see Figure 28: "Test circuit for inductive load switching") di/dt = 1000 A/µs DocID028465 Rev 3 Min. Typ. Max. Unit - 140 ns - 21 nC - 6.6 A - 430 A/µs - 1.6 µJ - 200 ns - 47.3 nC - 9.6 A - 428 A/µs - 3.2 µJ 5/17 Electrical characteristics 2.1 6/17 STGWT40HP65FB Electrical characteristics (curves) Figure 2: Power dissipation vs. case temperature Figure 3: Collector current vs. case temperature Figure 4: Output characteristics (TJ = 25°C) Figure 5: Output characteristics (TJ = 175°C) Figure 6: VCE(sat) vs. junction temperature Figure 7: VCE(sat) vs. collector current DocID028465 Rev 3 STGWT40HP65FB Electrical characteristics Figure 8: Collector current vs. switching frequency Figure 9: Forward bias safe operating area Figure 10: Transfer characteristics Figure 11: Diode VF vs. forward current Figure 12: Normalized VGE(th) vs junction temperature Figure 13: Normalized V(BR)CES vs. junction temperature DocID028465 Rev 3 7/17 Electrical characteristics 8/17 STGWT40HP65FB Figure 14: Capacitance variations Figure 15: Gate charge vs. gate-emitter voltage Figure 16: Switching energy vs collector current Figure 17: Switching energy vs gate resistance Figure 18: Switching energy vs temperature Figure 19: Switching energy vs. collector emitter voltage DocID028465 Rev 3 STGWT40HP65FB Electrical characteristics Figure 20: Switching times vs. collector current Figure 21: Switching times vs. gate resistance Figure 22: Reverse recovery current vs. diode current slope Figure 23: Reverse recovery time vs. diode current slope Figure 24: Reverse recovery charge vs. diode current slope Figure 25: Reverse recovery energy vs. diode current slope DocID028465 Rev 3 9/17 Electrical characteristics STGWT40HP65FB Figure 26: Thermal impedance 10/17 DocID028465 Rev 3 STGWT40HP65FB Electrical characteristics Figure 27: Thermal impedance for diode DocID028465 Rev 3 11/17 Test circuits 3 STGWT40HP65FB Test circuits Figure 28: Test circuit for inductive load switching Figure 29: Gate charge test circuit VCC C A A 12 V L=100 µH G E B B 3.3 µF C RG 1 kΩ 100 nF G + 47 kΩ 1000 µF VCC D.U.T Vi ≤ VGMAX E 2200 µF IG=CONST 2.7 kΩ 100 Ω D.U.T. VG 47 kΩ PW 1 kΩ AM01504v 1 AM01505v1 Figure 30: Switching waveform 12/17 DocID028465 Rev 3 STGWT40HP65FB 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID028465 Rev 3 13/17 Package information 4.1 STGWT40HP65FB TO-3P package information Figure 31: TO-3P package outline 8045950_B 14/17 DocID028465 Rev 3 STGWT40HP65FB Package information Table 8: TO-3P package mechanical data mm Dim. Min. Typ. Max. A 4.60 4.80 5.00 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1.00 1.20 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 13.70 13.90 14.10 E 15.40 15.60 15.80 E1 13.40 13.60 13.80 E2 9.40 9.60 9.90 e 5.15 5.45 5.75 L 19.80 20.00 20.20 L1 3.30 3.50 3.70 L2 18.20 18.40 18.60 ØP 3.30 3.40 3.50 ØP1 3.10 3.20 3.30 Q 4.80 5.00 5.20 Q1 3.60 3.80 4 DocID028465 Rev 3 15/17 Revision history 5 STGWT40HP65FB Revision history Table 9: Document revision history 16/17 Date Revision Changes 20-Oct-2015 1 First release. 01-Mar-2016 2 Updated features in cover page. Inserted Section 2.1: "Electrical characteristics (curves)". Minor text changes 13-Jul-2016 3 Document status promoted from preliminary to production data. DocID028465 Rev 3 STGWT40HP65FB IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID028465 Rev 3 17/17