STGWT60H65FB

STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current • VCE(sat) = 1.6 V (typ.) @ IC = 60 A 2 3 3 2 1 TO-247 1 • Tight parameters distribution • Safe paralleling • Low thermal resistance TO-3P Applications • Photovoltaic inverters Figure 1. Internal schematic diagram C (2, TAB) • High frequency converters Description These are IGBT devices developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the new HB series of IGBTs which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. G (1) E (3) Table 1. Device summary Order code Marking Package Packing STGW60H65FB GW60H65FB TO-247 Tube STGWT60H65FB GWT60H65FB TO-3P Tube April 2015 This is information on a product in full production. DocID025187 Rev 4 1/16 www.st.com 16 Contents STGW60H65FB, STGWT60H65FB Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 2/16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 DocID025187 Rev 4 STGW60H65FB, STGWT60H65FB 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCES IC Parameter Collector-emitter voltage (VGE = 0) Continuous collector current at TC = 25 °C Value Unit 650 V 80 (1) A Continuous collector current at TC = 100 °C 60 ICP(2) Pulsed collector current 240 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25 °C 375 W Tstg Tj Storage temperature -55 to 150 Operating junction temperature -55 to 175 °C 1. Current level is limited by bond wires. 2. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter Value Rthj-C Thermal resistance junction-case 0.4 Rthj-A Thermal resistance junction-ambient 50 Unit °C/W DocID025187 Rev 4 3/16 Electrical characteristics 2 STGW60H65FB, STGWT60H65FB Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) Unit V 1.60 VGE = 15 V, IC = 60 A Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 60 A TJ = 175 °C VGE(th) Max. 650 VGE = 15 V, IC = 60 A VCE(sat) Typ. 2.0 1.75 V 1.85 5 6 7 V VCE = 650 V 25 µA VGE = ± 20 V ±250 nA Unit Table 5. Dynamic characteristics Symbol 4/16 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 520 V, IC = 60 A, VGE = 15 V, see Figure 23 Qge Gate-emitter charge Qgc Gate-collector charge DocID025187 Rev 4 Min. Typ. Max. - 7792 - - 262 - - 158 - - 306 - - 126 - - 58 - pF nC STGW60H65FB, STGWT60H65FB Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Min. Typ. Turn-on delay time - 66 Current rise time - 38 - 1216 A/µs 210 ns Turn-on current slope VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V, see Figure 22 Turn-off delay time Unit ns - ns - 20 - ns Turn-on switching loss - 1590 - µJ Turn-off switching loss - 900 - µJ Ets Total switching loss - 2490 - µJ td(on) Turn-on delay time - 59 Current rise time - 40 Turn-on current slope - 1230 A/µs 242 ns Eon(1) Eoff(2) tr (di/dt)on td(off) tf Eon(1) Eoff(2) Ets Current fall time Max. VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C, see Figure 22 Turn-off delay time Current fall time ns - ns - 147 - ns Turn-on switching loss - 2860 - µJ Turn-off switching loss - 1255 - µJ Total switching loss - 4115 - µJ 1. Energy loss includes reverse recovery of the external diode. The diode is the same as the co-packaged STGW60H65DFB. 2. Turn-off loss also includes the tail of the collector current. DocID025187 Rev 4 5/16 Electrical characteristics 2.1 STGW60H65FB, STGWT60H65FB Electrical characteristics (curve) Figure 2. Output characteristics (TJ = 25°C) *,3')65 ,& $ 9*6 9 Figure 3. Output characteristics (TJ = 175°C) *,3')65 ,& $ 9*6 9   9*6 9 9*6 9     9*6 9           9&(9 Figure 4. Transfer characteristics *,3')65 ,& $  9*6 9 9*6 9       9&(9 Figure 5. Collector current vs. case temperature GIPD270820131347FSR IC (A) 80 9&( 9  60  40  20  7M ƒ&    VGE = 15V, TJ = 175 °C 7M ƒ&     9*(9 Figure 6. Power dissipation vs. case temperature GIPD270820131401FSR Ptot (W) 0 0 25 50 75 100 125 150 TC(°C) Figure 7. VCE(sat) vs. junction temperature GIPD021020131457FSR VCE(sat) (V) VGE= 15V 2.6 IC= 120A 2.4 300 2.2 2.0 200 IC= 60A 1.8 100 1.6 IC= 30A VGE = 15V, TJ = 175 °C 1.4 0 6/16 0 25 50 75 100 125 150 TC(°C) 1.2 -50 DocID025187 Rev 4 0 50 100 150 Tj(°C) STGW60H65FB, STGWT60H65FB Electrical characteristics Figure 8. VCE(sat) vs. collector current GIPD270820131423FSR VCE(sat) (V) VGE= 15V Figure 9. Forward bias safe operating area *,3*$/6 ,& $   9& TJ= 25°C 2.0 —V ( V 2.2 DW OL PL W 2.4 —V TJ= 175°C 1.8   —V 1.6 7M”ƒ& 7F ƒ& 9*( 9 VLQJOHSXOVH   TJ= -40°C 1.4 1.2 0  20 40 60 80 100 IC(A) Figure 10. Normalized V(BR)CES vs. junction temperature GIPD280820131415FSR V(BR)CES    PV   9&(9 Figure 11. Normalized VGE(th) vs. junction temperature GIPD280820131503FSR VGE(th) (norm) (norm) IC= 1mA 1.1 1.0 IC= 2mA 0.9 1.0 0.8 0.7 0.9 -50 0 50 100 150 TJ(°C) Figure 12. Gate charge vs. gate-emitter voltage GIPD280820131507FSR VGE (V) 0.6 -50 0 50 100 150 Figure 13. Switching loss vs temperature GIPD290820131623FSR E (μJ) VCC= 400V, VGE= 15V Rg= 10Ω, IC= 60A VCC= 520V, IC= 60A Ig= 1mA 14 TJ(°C) EON 2600 12 10 1800 8 EOFF 6 1000 4 2 0 0 50 100 150 200 250 300 350 Qg(nC) 200 25 DocID025187 Rev 4 50 75 100 125 150 TJ(°C) 7/16 Electrical characteristics STGW60H65FB, STGWT60H65FB Figure 14. Switching loss vs gate resistance GIPD280820131527FSR E(μJ) EON Figure 15. Switching loss vs collector current GIPD280820131538FSR E (μJ) 7000 VCC= 400V, VGE= 15V Rg= 10Ω, TJ= 175°C 6000 2900 5000 EON 4000 2100 EOFF EOFF 3000 2000 1300 VCC = 400V, VGE = 15V IC = 60A, TJ = 175 °C 500 6 2 10 14 1000 RG(Ω) 18 Figure 16. Switching loss vs collector emitter voltage E (μJ) 4300 GIPD280820131554FSR TJ= 175°C, VGE= 15V Rg= 10Ω, IC= 60A EON 0 0 20 40 60 80 100 IC(A) Figure 17. Switching times vs collector current GIPD280820131613FSR t (ns) tdoff 3300 100 tdon 2300 tr EOFF tf 10 1300 300 150 250 350 VCE(V) 450 Figure 18. Switching times vs gate resistance GIPD280820131622FSR t (ns) 1 0 TJ= 175°C, VGE= 15V Rg= 10Ω, VCC= 400V 20 40 60 80 100 IC(A) Figure 19. Capacitance variations GIPD280820131518FSR C(pF) TJ= 175°C, VGE= 15V IC= 60A, VCC= 400V f = 1 MHz 10000 Cies tdoff 100 1000 tdon 100 tf Coes Cres tr 10 8/16 4 8 12 16 20 Rg(Ω) 10 0.1 DocID025187 Rev 4 1 10 100 VCE(V) STGW60H65FB, STGWT60H65FB Electrical characteristics Figure 20. Collector current vs. switching frequency GIPD080120151105FSR Ic (A) Figure 21. Thermal impedance ZthTO2T_A K d=0.5 100 0.2 Tc=80°C 0.1 80 Tc=100 °C 10 -1 0.05 60 40 20 1 0.02 0.01 rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=10 Ω, VGE = 0/15 V, TJ =175°C) 10 Single pulse f (kHz) 10 -2 10 -5 DocID025187 Rev 4 10 -4 10 -3 10 -2 10 -1 tp (s) 9/16 Test circuits 3 STGW60H65FB, STGWT60H65FB Test circuits Figure 22. Test circuit for inductive load switching Figure 23. Gate charge test circuit k k k k k k AM01504v1 Figure 24. Switching waveform 90% 10% VG 90% VCE 10% Tr(Voff) Tcross 90% IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff AM01506v1 10/16 DocID025187 Rev 4 AM01505v1 STGW60H65FB, STGWT60H65FB 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-247 package information Figure 25. TO-247 package outline 0075325_H DocID025187 Rev 4 11/16 Package information STGW60H65FB, STGWT60H65FB Table 7. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 12/16 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID025187 Rev 4 5.70 STGW60H65FB, STGWT60H65FB 4.2 Package information TO-3P package information Figure 26. TO-3P package outline 8045950_B DocID025187 Rev 4 13/16 Package information STGW60H65FB, STGWT60H65FB Table 8. TO-3P mechanical data mm Dim. 14/16 Min. Typ. Max. A 4.60 4.80 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1.00 1.20 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 13.70 13.90 14.10 E 15.40 15.60 15.80 E1 13.40 13.60 13.80 E2 9.40 9.60 9.90 e 5.15 5.45 5.75 L 19.80 20 20.20 L1 3.30 3.50 3.70 L2 18.20 18.40 18.60 øP 3.30 3.40 3.50 øP1 3.10 3.20 3.30 Q 4.80 5 5.20 Q1 3.60 3.80 4 DocID025187 Rev 4 STGW60H65FB, STGWT60H65FB 5 Revision history Revision history Table 9. Document revision history Date Revision 30-Aug-2013 1 Initial release. 28-Feb-2014 2 Updated title and features in cover page. 3 Updated features in cover page, Table 2: Absolute maximum ratings, Table 4: Static characteristics and Table 6: Switching characteristics (inductive load). Updated Figure 5: Collector current vs. case temperature, Figure 6: Power dissipation vs. case temperature, Figure 8: VCE(sat) vs. collector current, Figure 17: Switching times vs collector current, Figure 18: Switching times vs gate resistance and Figure 19: Capacitance variations. Added Figure 20: Collector current vs. switching frequency. Updated Section 4: Package information. Minor text changes. 4 Text edits throughout document Updated Table 2: Absolute maximum ratings Updated Table 4: Static characteristics Updated Table 6: Switching characteristics (inductive load) Updated Section 2.1: Electrical characteristics (curve). 09-Jan-2015 01-Apr-2015 Changes DocID025187 Rev 4 15/16 STGW60H65FB, STGWT60H65FB IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 16/16 DocID025187 Rev 4