STGWT80V60DF

STGW80V60DF STGWT80V60DF Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 80 A • Tight parameters distribution 2 3 3 1 2 1 • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode TO-247 TO-3P Applications Figure 1. Internal schematic diagram C (2 or TAB) • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters Description G (1) This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. E (3) Table 1. Device summary Order code Marking Package Packaging STGW80V60DF GW80V60DF TO-247 Tube STGWT80V60DF GWT80V60DF TO-3P Tube January 2014 This is information on a product in full production. DocID024362 Rev 2 1/18 www.st.com 18 Contents STGW80V60DF, STGWT80V60DF Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 DocID024362 Rev 2 STGW80V60DF, STGWT80V60DF 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Parameter Collector-emitter voltage (VGE = 0) Value Unit 600 V (1) IC Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C 80 A ICP(2) Pulsed collector current 240 A VGE Gate-emitter voltage ±20 V 120 (1) A IF Continuous forward current at TC = 25 °C IF Continuous forward current at TC = 100 °C 80 A IFP(2) Pulsed forward current 360 A PTOT Total dissipation at TC = 25 °C 469 W TSTG Storage temperature range - 55 to 150 °C Operating junction temperature - 55 to 175 °C Value Unit TJ 120 A 1. Current level is limited by bond wires 2. Pulse width limited by maximum junction temperature Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case IGBT 0.32 °C/W RthJC Thermal resistance junction-case diode 0.66 °C/W RthJA Thermal resistance junction-ambient 50 °C/W DocID024362 Rev 2 3/18 Electrical characteristics 2 STGW80V60DF, STGWT80V60DF Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VF 4/18 Unit V 1.85 VGE = 15 V, IC = 80 A Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 80 A TJ = 175 °C Forward on-voltage Max. 600 VGE = 15 V, IC = 80 A VCE(sat) Typ. 2.3 2.15 V 2.4 IF = 80 A 1.9 IF = 80 A TJ = 125 °C 1.6 V IF = 80 A TJ = 175 °C 1.5 V VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) 6 V 7 V VCE = 600 V 100 μA VGE = ± 20 V 250 nA DocID024362 Rev 2 5 2.3 STGW80V60DF, STGWT80V60DF Electrical characteristics Table 5. Dynamic characteristics Symbol Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 80 A, VGE = 15 V, see Figure 29 Qge Gate-emitter charge Qgc Gate-collector charge Min. Typ. Max. Unit - 10800 - nF - 390 - pF - 220 - pF - 448 - nC - 76 - nC - 184 - nC Table 6. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Test conditions Min. Typ. Max. Unit Turn-on delay time - 60 - ns Current rise time - 30 - ns - 2200 - A/μs - 220 - ns - 17 - ns Turn-on current slope VCE = 400 V, IC = 80 A, RG = 5 Ω, VGE = 15 V, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 1.8 - mJ Eoff(2) Turn-off switching losses - 1 - mJ Total switching losses - 2.8 - mJ Turn-on delay time - 60 - ns Current rise time - 30 - ns - 2100 - A/μs - 240 - ns - 22 - ns Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope VCE = 400 V, IC = 80 A, RG = 5 Ω, VGE = 15 V, TJ = 175 °C, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 3.8 - mJ Eoff(2) Turn-off switching losses - 1.25 - mJ Total switching losses - 5.05 - mJ Ets 1. Parameter Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. DocID024362 Rev 2 5/18 Electrical characteristics STGW80V60DF, STGWT80V60DF Table 7. Diode switching characteristics (inductive load) Symbol 6/18 Parameter Test conditions trr Reverse recovery time Qrr Reverse recovery charge IF = 80 A, VR = 400 V, di/dt = 1000 A/μs, VGE = 15 V, see Figure 28 Min. Typ. Max. Unit - 60 - ns - 112 - nC - 3.6 - A - 140 - A/μs Irrm Reverse recovery current dIrr/ /dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 70 - μJ trr Reverse recovery time - 340 - ns Qrr Reverse recovery charge - 2200 - nC Irrm Reverse recovery current - 13 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 70 - A/μs Err Reverse recovery energy - 880 - μJ IF = 80 A, VR = 400 V, di/dt = 1000 A/μs, VGE = 15 V; TJ = 175 °C see Figure 28 DocID024362 Rev 2 STGW80V60DF, STGWT80V60DF 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature GIPD041120131017FSR Ptot (W) Figure 3. Collector current vs. case temperature 400 120 300 90 200 60 100 30 0 0 25 50 GIPD041120131118FSR IC (A) 11V VGE=15V 9V VGE ≥ 15V, TJ ≤ 175 °C 0 0 75 100 125 150 175 TC(°C) Figure 4. Output characteristics (TJ = 25°C) GIPD011020131024FSR IC (A) 50 25 75 100 125 150 175 TC(°C) Figure 5. Output characteristics (TJ = 175°C) GIPD281020131423FSR IC (A) VGE=15V 120 120 80 80 40 40 13V 11V 9V 7V 0 0 1 2 3 4 Figure 6. VCE(sat) vs. junction temperature GIPD041120131129FSR VCE(sat) (V) 0 0 VCE(V) IC= 160A VCE(V) GIPD041120131136FSR VCE(sat) (V) VGE= 15V TJ= 175°C 3.5 3 3 IC= 80A 2.5 2.5 2 2 1.5 1 -50 4 3 Figure 7. VCE(sat) vs. collector current VGE= 15V 3.5 2 1 1.5 IC= 40A 0 50 100 150 TJ= 25°C TJ(°C) DocID024362 Rev 2 1 20 TJ= -40°C 40 60 80 100 120 140 IC(A) 7/18 Electrical characteristics STGW80V60DF, STGWT80V60DF Figure 8. Collector current vs. switching frequency GIPD041120131144FSR Ic [A] 160 Figure 9. Forward bias safe operating area GIPD041120131152FSR IC (A) Tc=80°C 100 120 Tc=100 °C 10 μs 80 10 40 rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=4.7 Ω, VGE = 0/15 V, TJ =175°C) 0 1 1 ms 1 1 f [kHz] 10 Figure 10. Transfer characteristics GIPD041120131324FSR IC (A) 100 μs Single pulse Tc= 25°C, TJ