STGFW80V60F, STGW80V60F,
STGWT80V60F
Trench gate field-stop IGBT, V series
600 V, 80 A very high speed
Datasheet - production data
Features
• Maximum junction temperature: TJ = 175 °C
1
• Tail-less switching off
• VCE(sat) = 1.85 V (typ.) @ IC = 80 A
3
2
• Tight parameters distribution
1
TO-3PF
TAB
• Safe paralleling
• Low thermal resistance
2
3
3
2
1
1
TO-247
TO-3P
Figure 1. Internal schematic diagram
C (2 or TAB)
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
G (1)
E (3)
Table 1. Device summary
Order code
Marking
Package
Packaging
STGFW80V60F
GFW80V60F
TO-3PF
Tube
STGW80V60F
GW80V60F
TO-247
Tube
STGWT80V60F
GWT80V60F
TO-3P
Tube
May 2014
This is information on a product in full production.
DocID026386 Rev 1
1/19
www.st.com
19
Contents
STGFW80V60F, STGW80V60F, STGWT80V60F
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5
2/19
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1
TO-3PF, STGFW80V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.2
TO-247, STGW80V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.3
TO-3P, STGWT80V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
DocID026386 Rev 1
STGFW80V60F, STGW80V60F, STGWT80V60F
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-247
TO-3PF
TO-3P
VCES
Collector-emitter voltage (VGE = 0)
IC
Continuous collector current at TC = 25 °C
IC
600
V
(1)
120
A
Continuous collector current at TC = 100 °C
80
A
ICP
Pulsed collector current
240
A
VGE
Gate-emitter voltage
±20
V
PTOT
Total dissipation at TC = 25 °C
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s; Tc = 25 °C)
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature
- 55 to 175
°C
(2)
TJ
469
79
W
3.5
kV
1. Current level is limited by bond wires.
2. Pulse width limited by maximum junction temperature.
Table 3. Thermal data
Value
Symbol
Parameter
Unit
TO-247
TO-3PF
TO-3P
RthJC
Thermal resistance junction-case
RthJA
Thermal resistance junction-ambient
DocID026386 Rev 1
0.32
1.9
50
°C/W
°C/W
3/19
Electrical characteristics
2
STGFW80V60F, STGW80V60F, STGWT80V60F
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
(VGE = 0)
IGES
Gate-emitter leakage
current (VCE = 0)
Unit
V
1.85
VGE = 15 V, IC = 80 A
Collector-emitter saturation
TJ = 125 °C
voltage
VGE = 15 V, IC = 80 A
TJ = 175 °C
VGE(th)
Max.
600
VGE = 15 V, IC = 80 A
VCE(sat)
Typ.
2.3
2.15
V
2.4
5
6
7
V
VCE = 600 V
100
µA
VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
4/19
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 480 V, IC = 80 A,
VGE = 15 V, see Figure 28
Qge
Gate-emitter charge
Qgc
Gate-collector charge
DocID026386 Rev 1
Min.
Typ.
Max.
Unit
-
10800
-
nF
-
390
-
pF
-
220
-
pF
-
448
-
nC
-
76
-
nC
-
184
-
nC
STGFW80V60F, STGW80V60F, STGWT80V60F
Electrical characteristics
Table 6. Switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
-
60
-
ns
Current rise time
-
30
-
ns
-
2200
-
A/µs
-
220
-
ns
-
17
-
ns
Turn-on current slope
VCE = 400 V, IC = 80 A,
RG = 10 Ω, VGE = 15 V,
see Figure 27
Turn-off delay time
Current fall time
Eon(1)
Turn-on switching losses
-
1.8
-
mJ
Eoff(2)
Turn-off switching losses
-
1
-
mJ
Total switching losses
-
2.8
-
mJ
Turn-on delay time
-
60
-
ns
Current rise time
-
30
-
ns
Turn-on current slope
-
2100
-
A/µs
-
240
-
ns
-
22
-
ns
Ets
td(on)
tr
(di/dt)on
td(off)
tf
VCE = 400 V, IC = 80 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 27
Turn-off delay time
Current fall time
Eon(1)
Turn-on switching losses
-
3.8
-
mJ
Eoff(2)
Turn-off switching losses
-
1.25
-
mJ
Total switching losses
-
5.05
-
mJ
Ets
1. Energy loss include reverse recovery of the external diode. The diode is the same of the co-packed
STGW80V60DF
2. Turn-off losses include also the tail of the collector current.
DocID026386 Rev 1
5/19
Electrical characteristics
2.1
STGFW80V60F, STGW80V60F, STGWT80V60F
Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature for TO-247 and TO-3P
GIPD041120131017FSR
Ptot
(W)
Figure 3. Collector current vs. case temperature
for TO-247 and TO-3P
GIPD011020131024FSR
IC
(A)
VGE ≥ 15V, TJ ≤ 175 °C
VGE ≥ 15V, TJ ≤ 175 °C
400
120
300
90
200
60
100
30
0
0
25
50
75
Figure 4. Power dissipation vs. case
temperature for TO-3PF
*,3*)65
3WRW
:
0
0
100 125 150 175 TC(°C)
9*(97 -&
GIPD041120131118FSR
IC
(A)
11V
VGE=15V
7&&
Figure 6. Output characteristics (TJ = 25°C)
9V
100 125 150 175 TC(°C)
*,3*)65
,&
$
75
Figure 5. Collector current vs. case temperature
for TO-3PF
50
25
9*(97 -&
7&&
Figure 7. Output characteristics (TJ = 175°C)
GIPD281020131423FSR
IC
(A)
VGE=15V
120
120
80
80
40
40
13V
11V
9V
7V
0
0
6/19
1
2
3
4
VCE(V)
DocID026386 Rev 1
0
0
1
2
3
4
VCE(V)
STGFW80V60F, STGW80V60F, STGWT80V60F
Figure 8. VCE(sat) vs. junction temperature
GIPD041120131129FSR
VCE(sat)
(V)
IC= 160A
Electrical characteristics
Figure 9. VCE(sat) vs. collector current
VGE= 15V
VGE= 15V
3.5
GIPD041120131136FSR
VCE(sat)
(V)
TJ= 175°C
3.5
3
3
IC= 80A
2.5
2.5
2
2
1.5
1
-50
1.5
IC= 40A
0
50
100
150
1
20
TJ(°C)
Figure 10. Collector current vs. switching
frequency for TO-247 and TO-3P
GIPD041120131144FSR
Ic [A]
TJ= 25°C
TJ= -40°C
40
60
80
100 120
140
IC(A)
Figure 11. Collector current vs. switching
frequency for TO-3PF
*,3*)65
,F>$@
160
7F &
Tc=80°C
120
7F &
Tc=100 °C
80
40
rectangular current shape,
(duty cycle=0.5, VCC = 400V, RG=10 Ω ,
VGE = 0/15 V, TJ =175°C)
0
1
f [kHz]
10
UHFWDQJXODUFXUUHQWVKDSH
GXW\F\FOH 9&& 95*
9*( 97- &
I>N+]@
Figure 12. Forward bias safe operating area for Figure 13. Forward bias safe operating area for
TO-247 and TO-3P
TO-3PF
GIPD041120131152FSR
IC
(A)
*,3*)65
,&
$
100
10 μs
10
Single pulse
Tc= 25°C, TJ